3030BL Search Results

Contextual Info: E G & G/CANADA/OPTOELEK 47E 3030blG D GGQ0332 I CANA 1 F Series FND-100;FNP-100Q;FOD-100 T4/-53 Features • • • High Responsivity Ultra-Fast Rise and Fall Time Isolated Photodiode Chip Large Active Area Wide Spectral Range Low NEP Operating Data and Specifications at 23°C: Typical Performance at 90 V Bias

Contextual Info: E G & G/CANADA/OPTOELEK M7E ì> • 3030bl0 000031Ô ICANA 7 TCN-1000 Series -93; -12; -3 t -Hì -67 Features • • Built-in Low Noise Am plifier S hielded Feedback Loop Large Active Area Shielded Am plifier • • Low Offset W id e Spectral R ange Operating Data and Specifications at 23°C

CS6051

Abstract: SIECOR Fiber Optic cable RCA Solid State siecor C86051EW1 C86051EW2 C86051EW3 C86051EW4 RCA Solid State power devices SIECOR Fiber Optics
Contextual Info: E fi & G / C A N A D A / O P T O E L E K IO ]> 3030blG DD0GGL.5 <122 « C A N A C86051E Series GaAIAs Injection Lasers Developmental Types 800-900 nm Gallium Aluminum Arsenide Injection Lasers for Pulsed Operation With Integral Fiber Optic Output Cables and Connectors

SIECOR Fiber Optic cable

Abstract: siecor C30617E EG*G Optoelectronics Siecor 62.5 C30986E C86081E-13 C86081E-14 1300 nm LEDs SIECOR Fiber Optics
Contextual Info: E fi 8. G / C A N A D A / O P T O E L E K 4?E T> 3030bl0 OODOET? 3 I CANA t-fl-O l OPTOELECTRONICS C86081E Series Our 100% quality screening tests include a stabilization bake at 85°C for a minimum of 10 hours, burn-in and thermal shock: 5 cycles, -20 to +70°C.

MIL-STD-2020

Contextual Info: E G & 6/CANADA/0PT0ELEK M7E T> m 3030bl0 000032B 1 • CANA YAG Series_ ~r-<//-53 Features • • • • Planar Diffused Large A rea W ide Dynam ic R ange > 5 0 % DC Quantum Efficiency at 1064 nm • Pulse Quantum Efficiency at 1064 nm > 3 8 % at 20 nS Pulse Width

Contextual Info: E G & G/CANADA/OPTOELEK ID D 3030bl0 OOOG1SS I t c / l Optics «CANA t - w Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm

sg3001

Abstract: 2l688 "rca application note" AN4469 904nm laser rca eg and g laser diode AN-4993 10-dimensional rca 036
Contextual Info: E G & G/CANADA/OPTOELEK n IO D • 3030bl0 0000070 SÛO M C A N A "T”- V/- Solid State f l * MW Electro Optics and Devices I f b f l E lectro O p t lC S SG3001 Stacked-Diode Laser Gallium Arsenide Type for Pulse Operation Total Peak Radiant Flux Power Output

C30916E

Abstract: rca 036 spot photodetector
Contextual Info: G & G/CANA]>A/OPTOELEK I t C J l 10 ]> I 3030blD 0000135 07b Electro uptics and Devices ICANA Photodiode Developmental Type C30916E - f - V 1-51 Large Area Silicon Avalanche Photodiode for General-Purpose Applications 8 5% typical at 900 nm Fast Tim e Response —

1012 opamp

Abstract: kss 215
Contextual Info: E G & G/CANADA/OPTOELEK 3030blD 0DDD32b b • CANA 47E D HAD Series 1100A T -W -6 7 Features • • Built-in High Speed Amplifier Groundable Case • Shielded Amplifier • Offset Null Control • • W ide Spectral Range Large Active Area Operating Data and Specifications at 23°C

sg3001

Contextual Info: E G & G/CANADA/OPTOELEK n A IO » • 3030bl0 0000070 SflO ■ CANA'7”- Solid State J V ElectroOptics and Devices Electro Optics SG3001 Stacked-Diode Laser Gallium Arsenide Type for Pulse Operation Total Peak Radiant Flux Power Output at ¡f m * 4 0 A and T c * 27° C —

Contextual Info: E fi i G / C A N A D A / O P T O E L E K R G i l Optics IO D WÊ 3030blD OOOOObM TTb H C A N A NEW SLETTER PRELIMINARY DATA SHEET SERIES C86048 AND C86070 1060 nm Pulsed Lasers Desiqned and characterized primarily for simulation of Nd/YAG lasers, the diodes are offered in TO-5 outline with window or fiber piqtail.

Contextual Info: G & IDE D G/CANADA/OPTOELEK I t C / l 3030bl0 QÜGDD37 T ICANA 7e y / - ° INFRARED EMITTER PACKAGE LOW PROFILE OIL DATA SHEET C86065E-13 • 1300 nm LED, Multi Mode Pigtail C86065E-14 • 1300 nm LED, Single Mode Pigtail C86067E • 820 nm LED LOW PROFILE DIL PACKAGE

TCN-1000-12

Abstract: NEP 250 TCN-1000-93 TCN-1000-3
Contextual Info: E G & G/CANADA/OPTOELEK H7E D • 3030blD 00D031Ô 7 «CANA TCN-1000 Series -93; -12; - 3 _ t - h i- 6 7 Features • • Built-in Low Noise Amplifier Shielded Feedback Loop • Large Active Area • Shielded Amplifier • • Low Offset Wide Spectral Range

indium gallium arsenide phosphide

Abstract: 090Q PREAMPLIFIER TRANSIMPEDANCE optic fet C30617 C30986-010 C30986-090QC-01 C30986-350 35XL 30306 3008D2
Contextual Info: E 6 & 6 / C A N A D A / O P T OELEK I t C / € l 3030bl0 000ülb3 ID T3D * C A N A InGaAs Photodiodes C30986 Series DATA SHEET Optics For Detection of 1000 to 1700 nm Radiation Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails

C30617E

Abstract: C30616E ingaas LED 5-1304 C86013E C30986E C86054E C86057E-13 C86057E-13-TC C86057E-14
Contextual Info: E G 8. G / C A N A D A / O P T O E L E K ItCJI 10E D • 3030blD OOQQOn A ■ CANA "H’ Electro InGaAsP Infrared Emitters Optics 1300 nm LED SERIES DATA SHEET C86057E SERIES - D u al-in -L in e p ack ag e S in g le o r m u ltim o d e fiber C86013E C86054E

Contextual Info: E S S 6/CANADA/OPTOELEK m 3030bl0 0000334 5 47 E t ICANA F Series FFD-040;FFD-100;FFD-200 rv/ J3 Features • • • • Low Operating Voltage High Responsivity Ultra-Fast Rise and FallTim e Isolated Photodiode Chip • • • Large Active Area W ide Spectral Range

gaseous lasers

Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
Contextual Info: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using

HUV-4000B

Abstract: HUV-2000B HUV1100BQ HUV4000B HUV-1100BQ NEP 250 HUV 4000B HUV-1100 GAM 84 1150 4000B
Contextual Info: E G & G/CANADA/OPTOELEK 47E J> • 3030bl0 0000314 T MCANA HUV Series 1100BG; 1100BQ; 2000B; 4000B T.v/.<7 Features • • Built-in Low Noise Amplifier Groundable C ase • • Shielded Amplifier Large Active Area • • W ide Spectral Range Oxide Passivated Structure

8A4 diode

Abstract: J20Si DIODE GE GE power diode Ge dual photodiode photodiode ge J20Si-SA4-R03M photodiode 1550 NEP pin Photodiode 1550 nm two color photodiode j20si
Contextual Info: E G & G/ CANADA/ OPTOELEK 47E 3030bl0 D D00Q33fl 2 • J20SÌ and J16SÌ Series T Features Applications • • • • • Dual-W avelength Detection P arallel Outputs Si/Si or S i/G e Sandwich CANA V/-55 - Two-Color Temperature M easurem ents Dual-W avelength Power Meters

Contextual Info: £ G & G/CANADA/OPTOELEK I t C J I sfj ID D Electro Optics m 3030bl0 D O G G I E bbO ICANA Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —

Contextual Info: E G & G/CANADA/OPTOELEK I t C / l T> I ID 3030blD 0DDD135 Electro uptics and Devices 07b « C A N A Photodiode Developm ental Type C30916E - f 'HI-51 Large Area Silicon Avalanche Photodiode for General-Purpose Applications High Quantum Efficiency 85% typical at 900 nm

Contextual Info: F r & g/CANADA /OP TOELEK n o n I ] ,□]>• 3030bl0 □□□□□40 SSE « C A N A Solid State Detectors Electro optics and Devices Developm ental TvDe C30948E Photodiode Silicon Avalanche Photodiode Having Very High Modulation Capability ■ High Quantum Efficiency 85% typical at 830 and 900 nm

Contextual Info: G S C/CANADA/OPTOELEK 10E C • 3030bl0 0000051 ICANA 1 C86006E. C86010E GaAlAs Injection Lasers Developmental Types 820 nm Gallium Aluminum Arsenide Injection Lasers for CW or Pulsed Operation With Integral Fiber Optic Cables and Connectors RCA developm ental types C86006E

HUV-2000B

Abstract: HUV-4000B HUV-1100
Contextual Info: E G & G/CANADA/OPTOELEK 47E J> • 3030bl0 0000314 T «CANA HUV Series 1100BG; 1100BQ; 2000B; 4000B T.v/,<7 Features • Built-in Low Noise Amplifier • Groundable Case • Shielded Amplifier • Large Active Area • Wide Spectral Range • Oxide Passivated Structure