30200M Search Results

Reeves Hoffman 101

Abstract: reeves-hoffman 30EDDM
Contextual Info: 30200MÛ 00 00 4 0 5 722 • REEVES-HOFFMAN Model 101 Ovenized Oscillator DIVISION DYNAMICS CORPORATION OF AMERICA . Features: • European Standard Package • Low Aging Rate • Precision Resonator • Precision Temperature Stability • Surface Mount Construction

va37a

Abstract: toko coils color code MC138
Contextual Info: 102 iM wKM æB C 13 ~— r^ rrw n ü»iiit ciiii I33CI VmU MC138 Space Wound Frequency Range: 30MHz-250MHzn Inductance Range: 0,03-0.2|iH Temperature Coefficient: 150ppm /°C, max. JL t □ 7.4Max Features • Similar to MC122 except that form is designed to accom m odate

ba6220

Abstract: ic type
Contextual Info: Products RONm Semiconductor IC Type Page 1/7 BA6220 STRUCTURE Silicon MonolithicIntegrated Circuit TYPE BA62 2 0 PACKAGE OUTLINE Fig.-l Plastic Mold BLOCK DIAGRAM Fig.-2 FUNCTION Motor Control FEATURE 1.Small package of DIP8pin,fitting for machine insert

transistor b605

Abstract: b605 remote control transmitter and receiver circuit f NC14000-B605 USB Connector A type Female DIP Straight usb to usb extender using rj45 cable b722 mini USB B 8pin FE-1000CW FD1000AT
Contextual Info: SERVISTM Cat5 Wide Band Extender FE-1000CW series - NC14004-B721/U The SERVIS family Cat5 Wide Band Extender enables the user to operate a control console with a high-resolution monitor via Cat5E UTP cable, up to a distance of 300 meters. Through efficient design, the FE-1000CW provides a

208H

Contextual Info: 1. S c h e m a t i c : n .j ISOLATION: 2250 Vdc min at BOSec input-O utput TURNS RATIO: (PRI/SEC) 1CT:1CT ± 2% OCL: 3 5 0 uH MIN <§>100KHz 100mV SmADC DCR: 0 . 6 5 O hm s M ax E a c h (1 / 2 w in d in g ) DCR IMBALANCE: ±0.065 Ohms Max (CENTER TAP SYMMETRY)

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

reeves-hoffman

Abstract: reeves-hoffman ocxo
Contextual Info: • BOEDDHfl 0 0 0 D 4 D 7 ■ — 5T5 ■ REEVES-HOFFMAN - — = = Model 105 Miniature OCXO DIVISION DYNAMICS CORPORATION OF AMERICA Features: • Frequency Range: 10 to 20 MHz • Stabilities as low as ±5 X 10'8 • Low profile .53 high • 1.5 inch sq. package

usb to usb extender using rj45 cable

Abstract: usb to rj45 cable extender Cat5e Application Note usb to 8 pin mini-din xlr to mini jack NC14000-B602 NC14000-B605 8 pin mini-din monitor connector mini USB a 8pin kvm extender distance
Contextual Info: SERVIS Cat5 Extender series Cat5 Extender Unit - NC14003-B713 Fujitsu Components’ Cat5 Extender DA enables the user to operate the computer, its console keyboard, mouse, and monitor , and audio port at intervals, up to a distance of 200m. This unit also comes with a RGB color quality adjustment circuit.

208H

Contextual Info: 1. Sch em atic: “ I .J ISOLATION: 1500VAC / 2250 Vdc min at 60Sec Input-Output TURNS RATIO: (P R I/SE C ) 1CT:1CT ±2 % OCL: 350uH MIN @100KHz 100mV 8mADC Q:18 Min @100KHz 0.1V DOR: 0.65 Ohms Max Each (1 /2 winding) DOR IMBALANCE: ±0.065 Ohms Max (CENTER TAP SYMMETRY)

Contextual Info: TYPE M C138 64 Molded C o ils IztiaVUiVU MC138 Space Wound Frequency Range: 30MHz-250MHz" Inductance Range: 0.03-0.2pH Temperature Coefficient: 150ppm/°C, max. t « r> I * *0 5 Unit: mm Features • Similar to MC122 except that form is designed to accommodate

hi-pot transformer

Contextual Info: REVISIONS REV. PART NUMBER DESCRIPTION DATE 01 FIRST RELEASE FOR RFQ#D2004-5622 N/A 11/18/04 02 UPDATE ELECTRICAL SPECIFICATION EE5845 11/19/04 03 UPDATE ELECTRICAL SPECIFICATION EE5863 11/23/04 04 CHANGE ELECTRICAL SPECIFICATION EE6115 02/07/05 05 UPDATE DRAWING

5cbl

Abstract: 5cbm
Contextual Info: TYPE 40 5CBL 5CBM TYPE 5CBL/5CBM For Reflow Soldering Frequency Range: 30-200MHz Inductance Range: 0 .0 3 -1 ,2|iH Temperature Coefficient: 150ppm /°C max. Features • Ideal for hybrid m icro circuits and high frequency applications. • An ultra-thin profile 2mm makes this coil ideal for space critical

A1000-REV00k9040-IE

Abstract: AX-REM01K9050-IE a1000-fia3071-re A1000-FIV3005-RE A1000-REV00k6050-IE A1000FIA3105RE AX-FIM1024-RE
Contextual Info: Listino prezzi Validità 1° GENNAIO 2014 industrial.omron.it /67/23
8731'</32+

+22'/3
 ";CI?A;
A?;CI;, ? ? :;:?97I?
7A
H;IIDG;
;A;IIGDC?9D
G;A
E;G
9?G9J?ID
HI7BE7ID
B?9GD?CI;GGJIIDG?
;99

RF POWER TRANSISTOR NPN mrf317

Abstract: transistor MRF317 MRF317 transistor npn 100w amplifier mrf317 datasheet ADVANCED POWER TECHNOLOGY EUROPE npn 100w npn 28v 100w amplifier
Contextual Info: MRF317 The RF Line NPN Silicon Power Transistor 100W, 30-200MHz, 28V Designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. • • • • • • • Guaranteed performance at 150 MHz, 28 Vdc Output power = 100 W

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .

RJ45 modular jack

Abstract: 208H
Contextual Info: 1. Sch em atic: “ I .J ISOLATION: 1500VAC / 2250 Vdc min at 60Sec Input-Output TURNS RATIO: (P R I/SE C ) 1CT:1CT ±2 % OCL: 350uH MIN @100KHz 100mV 8mADC Q:18 Min @100KHz 0.1V DOR: 0.65 Ohms Max Each (1 /2 winding) DOR IMBALANCE: ±0.065 Ohms Max (CENTER TAP SYMMETRY)

208H

Contextual Info: 1. Sch em atic: “I .J ISOLATION: 2250 Vdc min at 60Sec Input-Output TURNS RATIO: (P R I/SE C ) 1CT:1CT ±2 % OCL: 350uH MIN @100KHz 100mV 8mADC Q:18 Min @100KHz 0.1V DCR: 0.65 Ohms Max Each (1 /2 winding) DCR IMBALANCE: ±0.065 Ohms Max (CENTER TAP SYMMETRY)

208H

Contextual Info: 1. Sch em atic: “I .J ISOLATION: 2250 Vdc min at 60Sec Input-Output TURNS RATIO: (P R I/SE C ) 1CT:1CT ±2 % OCL: 350uH MIN @100KHz 100mV 8mADC Q:18 Min @100KHz 0.1V DCR: 0.65 Ohms Max Each (1 /2 winding) DCR IMBALANCE: ±0.065 Ohms Max (CENTER TAP SYMMETRY)

Contextual Info: BOTHHAND USA 1000 BASE –T MAGNETICS MODULES P/N: 24HSS1041RZ-2 HF DATA SHEET Feature l Designed for long haul gigabit Ethernet 1000 BASE-T, full duplex applications. Supports 4 pairs of category 5 UTP cable. Cable interface for isolation and low common mode

MRF314

Contextual Info: MRF314 The RF Line NPN Silicon Power Transistor 30W, 30-200MHz, 28V Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • • • M/A-COM Products Released - Rev. 05202009 Product Image Guaranteed performance at 150 MHz, 28 Vdc

Contextual Info: REVISIONS DESCRIPTION REV. 01 824-00455R PART DESCRIPTION N/A 11/21/11 UNLESS OTHERWISE SPECIFIED, DIMENSIONS ARE IN INCH/mm. ALL SHEETS OF THIS DOCUMENT ARE CONTROLLED DOCUMENTATION AND TOLERANCE ARE: ARE NOT TO BE RELEASED OUTSIDE INCH mm ANGLE OF E&E OR ITS SUB-CONTRACTORS

208H

Abstract: 0609
Contextual Info: 1. Sch em atic: “I .J ISOLATION: 2250 Vdc min at 60Sec Input-Output TURNS RATIO: (P R I/SE C ) 1CT:1CT ±2 % OCL: 350uH MIN @100KHz 100mV 8mADC Q:18 Min @100KHz 0.1V DCR: 0.65 Ohms Max Each (1 /2 winding) DCR IMBALANCE: ±0.065 Ohms Max (CENTER TAP SYMMETRY)

Contextual Info: TYPE r& T O K O Variable Coils fo r Surface Mounting 5CBL TYPE 5CBL For Reflow Soldering Frequency Range: 30-200MHz Inductance Range: 0.03-1,2pH Temperature Coefficient: 150ppm/nC max. 4.1 2 Xh |H ' i ' r ' t i: w . 6 - t A r i| - 5 » o • t ■ X 1 7 Features

Contextual Info: REVISIONS REV. DESCRIPTION 01 FIRST RELEASE 02 UPDATE DRAWING ECN NO. DATE N/A 12/31/10 EE12965 07/21/11 PAGE 4&5 ARE FOR INTERNAL ONLY TITLE PART NUMBER 824-00435R PART DESCRIPTION TRANSFORMER, 1000BASE-T PoE+ , SINGLE, SOIC, 24 PIN, EXT. TEMP. RoHS compliant per EU Directive 2002/95/EC