3019 TRANSISTOR Search Results

30191

Abstract: 30192 2SC4412
Contextual Info: Ordering number: EN 3019 2SC4412 No.3019 NPN Triple Diffused Planar Silicon Transistor SA\YO i TV Camera Deflection, High-Voltage Driver Applications Features . High breakdown voltage Vqeo —300V • Small reverse transfer capacitance and excellent high frequency characteristic (cre: l.OpF typ)

3020

Abstract: 3019 2N3019 3020 transistor 2n3020
Contextual Info: 2N 3019 2N 3020 SILICON PLANAR NPN HIGH-CURRENT, HIGH-FREQUENCY AMPLIFIERS The 2N 3019 and 2N 3020 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case, designed fo r high-current, high-frequency am plifier applications. They feature high gain and low saturation voltages.

Contextual Info: 2SC D B A23SbDS □ ÜQH'iÜfc» S « S I E G _ „ _ , , J ~ i ' r — t '- S NPN Silicon Planar Transistor 2 N 3019 _ SIEMENS A K T I E N G E S E L L S C H A F -2 N 3019 is an epitaxial NPN silicon planar transistor in TO 39 case 5 C 3 DIN 41873 .

Contextual Info: 19-3019; Rev 1; 3/04 KIT ATION EVALU LE B A IL A AV Dual 8-Bit, 300Msps DAC with 4x/2x/1x Interpolation Filters and PLL Applications Communications SATCOM, LMDS, MMDS, HFC, DSL, WLAN, Point-to-Point Microwave Links Wireless Base Stations Direct Digital Synthesis

Contextual Info: |~O rd e rin g n u m b e r: EN 3 0 1 9 2SC4412 No.3019 NPN Triple Diffused Planar Silicon Transistor TV Camera Deflection, High-Voltage Driver Applications Features . High breakdown voltage Vceo —300V • Small reverse transfer capacitance and excellent high frequency characteristic (cre : l.OpF typ)

transistor DA3 309

Abstract: 9450MHz filter MAX4040 MAX5856A MAX5856AECM MAX5858AEVKIT MAX6520
Contextual Info: 19-3019; Rev 1; 3/04 KIT ATION EVALU LE B A IL A AV Dual 8-Bit, 300Msps DAC with 4x/2x/1x Interpolation Filters and PLL Applications Communications SATCOM, LMDS, MMDS, HFC, DSL, WLAN, Point-to-Point Microwave Links Wireless Base Stations Direct Digital Synthesis

Contextual Info: 19-3019; Rev 1; 3/04 KIT ATION EVALU LE B A IL A AV Dual 8-Bit, 300Msps DAC with 4x/2x/1x Interpolation Filters and PLL Applications Communications SATCOM, LMDS, MMDS, HFC, DSL, WLAN, Point-to-Point Microwave Links Wireless Base Stations Direct Digital Synthesis

transistor DA3 309

Abstract: 9450MHz filter MAX4040 MAX5856A MAX5856AECM MAX5858AEVKIT MAX6520
Contextual Info: 19-3019; Rev 0; 10/03 KIT ATION EVALU E L B A IL AVA Dual 8-Bit, 300Msps DAC with 4x/2x/1x Interpolation Filters and PLL Communications SATCOM, LMDS, MMDS, HFC, DSL, WLAN, Point-to-Point Microwave Links Wireless Base Stations Direct Digital Synthesis Instrumentation/ATE

Contextual Info: 19-3019; Rev 1; 3/04 KIT ATION EVALU LE B A IL A AV Dual 8-Bit, 300Msps DAC with 4x/2x/1x Interpolation Filters and PLL The MAX5856A features digital control of channel gain matching to within ±0.4dB in sixteen 0.05dB steps. Channel matching improves sideband suppression in

2N3019

Abstract: 2N3020 2N3019 and applications 3019
Contextual Info: 2N3019 2N 3020 SILICON PLANAR NPN H IG H -C U R R EN T, H IG H -FR EQ U EN C Y A M PLIFIER S The 2N 3019 and 2N 3CI20 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case, designed fo r high-current, high-frequency am p lifie r applications. They feature

Contextual Info: ¡J8BBBBB88& p |M iwiHBBffi sm ssssP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. loniftBHhr. 1m1 IIr ^888o 88% #f 1 l Data S heet No. 2N 3019 $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N3019 Type 2N3019 G eom etry 4500 Polarity NPN Qual Level: J A N -J A N S REF: M IL-P R F -19500/391

1N4I48

Abstract: TP3020A W-960 transistor BD135 BD135 TP3019 TP3019S Motorola Power Transistor
Contextual Info: MOT OR OL A SC XSTRS/R MbE F D • b3b7254 OO^SEOà 0 ■ PIOTb T 3 3 -0 3 MOTOROLA ■ SEM ICO N D U CTO R ■ TECHNICAL DATA TP 3019 TP3019S The RF Line U H F P o w er T ra n sisto rs The TP3019 and TP3019S are designed for 24 V common emitter base station ampli­

2N3019

Abstract: 200a liu Q68000-A627 transistor buv 90
Contextual Info: 2 S C D • A 2 3 S b D S □ ÜQH'iQfc» S « S I E G ^ > ¡ — Z > 7 '‘ ¿ '• 4 NPN Silicon Planar Transistor _ S I E M E N S 2 N 3019 A K T I E N 6 E S E L L S C H A F - 2 N 3 0 1 9 is an epitaxial N PN silicon planar transistor in TO 3 9 case 5 C 3 D IN 41873 .

TC5055

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP 3019 TP 3019S The RF Line U H F P o w e r T ra n s is to rs The TP3019 and TP3019S are designed fo r 24 V c o m m o n e m itte r base sta tio n a m p li­ fiers. O perating in the 8 2 0 -9 6 0 MHz b a n d w id th , th e y have been sp ecifica lly desig n ed fo r

30192

Abstract: 30191 2SC4412 EN3019
Contextual Info: Ordering number:EN3019 NPN Triple Diffused Planar Silicon Transistor 2SC4412 TV Camera Deflection, High-Voltage Driver Applications Package Dimensions • High breakdown voltage VCEO≥300V . · Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.0pF typ).

Contextual Info: P2N3019 CASE 29-03, STYLE 1 TO-92 TO-226AE M A X IM U M R A T IN G S R a tin g Sym bol V a lu e U n it C o lie c t o r - E m it t e r V o lta g e VCEO 80 Vdc C o lle c t o r - B a s e V o lta g e VCBO 120 V dc E m it t e r - B a s e V o lta g e VEBO 7 .0

TRANSISTOR BC 313

Abstract: 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 BSW21 2N 2222 2221-2N 2N2243 BC211 2N2195
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic 12 V PNP NPN 0,6.0,8 A < 0 ,2 A vC E O ^ \^ IS V

TRANSISTOR BC 313

Abstract: npn 2222 transistor transistor 2n 2222 2907 TRANSISTOR PNP NPN 2904 BSW21 2n 2222 transistor bc 107 transistor BCY 107 2907 pnp transistor
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r M ETAL-CASE/ BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC EO ^ \^ PNP PNP

BC 2219a

Abstract: BFX48 transistor 3504 npn 2N3108 2N3109 BFY50 BFY51 BFY56A
Contextual Info: ¿ 7 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# M M I & J O T « ! SMALL SIGNAL TRANSISTORS NPN GENERAL PURPOSE TRANSISTORS - TO 39 v CEO V C ER* h FE m in/m ax 3> <C Type mA (V) v CE(sat) m ax Ï ic (mA) (V) Pfot «T min ‘ off* (M H z) (ns) (m W )

2222a NPN

Abstract: 2222 NPN NPN 2N 2219 2222A npn 2907A 2n h 2222a cc 3053 npn 2222 NPN 2904 jedec Package TO-39
Contextual Info: JEDEC TRANSISTORS continued > ~ ir w o > Ui o > a UJ h< cc € X CO ^E c E UJ Ll. < > X CO X CD E _u > _c a. in V) UJ o E o X) o o fT min (MHz) PO LA R IT Y TYPE General purpose amplifiers and switches (»„„„„«u ID 01 II (0 t - LL1 O < CJ < O. @

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 T O -5 TO 205A D t ri T O -3 9 20 @ W ^C m in /m a x D E V IC E su s Ic (m a x ) TYPE VOLTS AM PS @ m A /V 2N 697 40h 0 .8 4 1 0 /1 2 0 @ 150/10 2N 1711 50h 1.0 2N 1613 50h 2N 1893

3055 5C pnp transistor

Abstract: n3055 2222 NPN 3055 pnp 3055 npn 3055 5c pnp N 2222 N2222 N2905 2N2218
Contextual Info: Switching transistors Continued Maximum ratings Characteristics ' t o t at 'c UC E O A V ^C E sat at V A *FE at / c and ^C E mA V 'o n ns CO (amb = + 4 W s Structure Fig. Nr. 5 Group Type 1q and 7B1: ; B2 mA mA mA 3; 1 2 N 708 NPN 9 0.32 0.2 15 S 0 .4

a42e

Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
Contextual Info: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless

2N2900

Abstract: 2N4033 2N2897 2N2898 2N2899 2N3019 2N3020 2N3036 2N3053 2N3056
Contextual Info: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C M axim um Ratings Type Polarity PD Ambient mW VCB Volts VCE Volts V eb Volts V c E (S a t) @ Ic / lß H f e >C Min/Max mA Volts ft MHz m A/m A Cob