3015 Search Results

Contextual Info: SN74LVC00 QUADRUPLE 2-INPUT POSITIVE-NAND GATE SCAS279B-JANUARY 1993 - REVISED JULY 1995 I • EP/C Enhanced-Performance Implanted CMOS Submicron Process • ESD Protection Exceeds 2000 V Per MII-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: SN74LVC157 QUADRUPLE 2-LINE TO 1-UNE DATA SELECTOR/MULTIPLEXER SCAS292B-JANUARY 19 9 3 - REVISED JULY 1995 I • EPIC Enhanced-Performance Implanted CMOS Submicron Process • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model

Contextual Info: SN74LVCU04 HEX INVERTER SCAS282B - JANUARY 1993 - REVISED JULY 1995 D, DB, OR PW PACKAGE TOP VIEW • EP/C (Enhanced-Performance Implanted CMOS) Submicron Process I • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model

Contextual Info: SN74LVC126A QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS SCAS339H – MARCH 1994 – REVISED OCTOBER 1998 D D D D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

Contextual Info: SN74ALVC125 QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS SCES110D – JULY 1997 – REVISED DECEMBER 1998 D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: SN74ALVC14 HEX SCHMITT-TRIGGER INVERTER SCES107E – JULY 1997 – REVISED AUGUST 1999 D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: SN74AC11-Q1 TRIPLE 3-INPUT POSITIVE-AND GATE SCLS523A − AUGUST 2003 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per D D D D PACKAGE TOP VIEW MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

NR3015T100M

Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series 3015T100M Features Item Summary 10 H(±20%), 700mA, 710mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions -/3015

SN74AHCT32

Abstract: SN74AHCT32-Q1 SN74AHCT32QDRG4Q1 SN74AHCT32QDRQ1 SN74AHCT32QPWRG4Q1 SN74AHCT32QPWRQ1
Contextual Info: SN74AHCT32-Q1 QUADRUPLE 2-INPUT POSITIVE-OR GATE SCLS528A − AUGUST 2003 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 1000 V Per D D D OR PW PACKAGE TOP VIEW MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

INA169-Q1

Abstract: 405C INA139 INA139-Q1 INA139QPWRQ1 INA169 INA169QPWRQ1
Contextual Info: XXX7xx01, XXX7xx18 XXX7xx25, XXX7xx28 XXX7xx30, XXX7xx75, XXX7xx85 www.ti.com SGLS185D − SEPTEMBER 2003 − REVISED APRIL 2008 HIGH-SIDE MEASUREMENT CURRENT SHUNT MONITOR FEATURES D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model

SN74HC138

Abstract: SN74HC138-Q1 SN74HC138QDRG4Q1 SN74HC138QDRQ1 SN74HC138QPWRG4Q1 SN74HC138QPWRQ1
Contextual Info: SN74HC138-Q1 3-LINE TO 8-LINE DECODERS/DEMULTIPLEXERS SCLS533A − AUGUST 2003 − REVISED SEPTEMBER 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 2000 V Per D D D D D D D D D OR PW PACKAGE TOP VIEW MIL-STD-883, Method 3015; Exceeds 200 V

KPL-3015SECK

Contextual Info: 3.0mmx1.5mm SMD CHIP LED LAMP Part Number: KPL-3015SECK Super Bright Orange Features Description z 3.0mmx1.5mm SMT LED, 1.4mm THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip.

ALVC126

Abstract: IDT74ALVC126
Contextual Info: IDT74ALVC126 3.3V CMOS QUADRUPLE BUS BUFFER GATE EXTENDED COMMERCIAL TEMPERATURE RANGE 3.3V CMOS QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS IDT74ALVC126 ADVANCE INFORMATION DESCRIPTION: FEATURES: – – 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015;

KPL-3015SURCK

Abstract: DSAA8030
Contextual Info: 3.0mmx1.5mm SMD CHIP LED LAMP Part Number: KPL-3015SURCK Hyper Red Features Description z 3.0mmx1.5mm SMT LED, 1.4mm THICKNESS. The Hyper Red source color devices are made with z LOW POWER CONSUMPTION. InGaAlP on GaAs substrate Light Emitting Diode. z WIDE VIEWING ANGLE.

SN64BCT29828B

Contextual Info: SN64BCT29828B 10-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS SCBS478 – MAY 1993 – REVISED NOVEMBER 1993 • • • • • • • DW OR NT PACKAGE TOP VIEW State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds

SN74LVC161284

Contextual Info: SN74LVC161284 19-BIT BUS INTERFACE SCAS583I – NOVEMBER 1996 – REVISED MARCH 1999 D D D D D 1.4-kΩ Pullup Resistors Integrated on All Open-Drain Outputs Eliminate the Need for Discrete Resistors ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

Contextual Info: SN74BCT25642 25ĆΩ OCTAL BUS TRANSCEIVER ą SCBS047C − DECEMBER 1989 − REVISED NOVEMBER 1993 • • • • • • • DW OR NT PACKAGE TOP VIEW State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds

SN74BCT756

Abstract: SN74BCT757 SN74BCT760
Contextual Info: SN74BCT756 OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS SCBS056B – OCTOBER 1990 – REVISED JULY 1997 D D DW OR N PACKAGE TOP VIEW BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

BV 501

Abstract: SN74ALVCH16820
Contextual Info: SN74ALVCH16820 3.3-V 10-BIT FLIP-FLOP WITH DUAL OUTPUTS S C E S 0 3 5 - JULY 1995 Member of the Texas Instruments Widebus Family EPIC™ Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds

SN74LVCU04A

Abstract: scba004
Contextual Info: SN74LVCU04A HEX INVERTER S C AS 282E - JA N U A R Y 1993 - R EVISED JA N U A R Y 1998 • • • • • • • EPIC Enhanced-Performance Implanted D, DB, O R PW PACKAGE (TOP VIEW CMOS) Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

SN54ABT863

Abstract: SN74ABT863
Contextual Info: SN54ABT863, SN74ABT863 9-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS S C B S 201C - FE BR U A R Y 1991 - REVISED MAY 1997 State-of-the-Art EPIC-UB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

SN54ABT543A

Abstract: SN74ABT543A
Contextual Info: SN54ABT543A, SN74ABT543A OCTAL REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS157D-JANUARY 1991 - REVISED SEPTEMBER 1996 State-of-the-Art EPIC-UB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

SN74LVC02A

Contextual Info: SN74LVC02A QUADRUPLE 2-INPUT POSITIVE-NOR GATE SC AS280C - JANUARY 1993 - R EVISED SEPTE M B E R 1996 • EPIC Enhanced-Performance Implanted CMOS Submicron Process D, DB, OR PW PACKAGE (TOP VIEW ) • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

SN74LVCU04A

Contextual Info: SN74LVCU04A HEX INVERTER SC A S 282F - JA N U A R Y 1993 - R EVISED JU NE 1998 • • • • • • • EPIC Enhanced-Performance Implanted D, DB, OR PW PACKAGE (TOP VIEW CMOS) Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V