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    300 W NPN DARLINGTON POWER TRANSISTORS Search Results

    300 W NPN DARLINGTON POWER TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    300 W NPN DARLINGTON POWER TRANSISTORS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPK1250 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)200 Absolute Max. Power Diss. (W)600 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.500


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    SPK1250 PDF

    Contextual Info: MJH6284 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)160 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300


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    MJH6284 PDF

    Contextual Info: DA11503008 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)500 V(BR)CBO (V) I(C) Max. (A)300 Absolute Max. Power Diss. (W)1.6k Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m¶ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.80


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    DA11503008 PDF

    Contextual Info: PMD25K120 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)9.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0mØ» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300


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    PMD25K120 time300n PDF

    Contextual Info: BU931ZP Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300


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    BU931ZP PDF

    Contextual Info: BU931ZT Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300


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    BU931ZT PDF

    Contextual Info: BU931Z Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300


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    BU931Z PDF

    Contextual Info: BU931ZTFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300


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    BU931ZTFI PDF

    Contextual Info: BU931 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300


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    BU931 PDF

    Contextual Info: BU931ZPFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300


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    BU931ZPFI PDF

    Contextual Info: PMD25K150 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)9.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0mØ» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300


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    PMD25K150 time300n PDF

    Contextual Info: BU931ZSM Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300


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    BU931ZSM PDF

    Contextual Info: BU931SM Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125# Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300


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    BU931SM PDF

    Contextual Info: BU931T Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125# Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300


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    BU931T PDF

    Contextual Info: BU931P Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300


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    BU931P PDF

    Contextual Info: MJ11028 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k


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    MJ11028 PDF

    Contextual Info: 2SD1909 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)500 I(C) Max. (A)6 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)400 h(FE) Min. Current gain.200


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    2SD1909 Freq20MÃ PDF

    Contextual Info: BU931TFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)40# Maximum Operating Temp (øC)150 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300


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    BU931TFI PDF

    Contextual Info: BU931RPFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.


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    BU931RPFI PDF

    Contextual Info: 2SD1592 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)300 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400 h(FE) Max. Current gain.3.0k


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    2SD1592 PDF

    Contextual Info: MJH6282 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)20 Absolute Max. Power Diss. (W)160 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.2.0k


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    MJH6282 PDF

    Contextual Info: MJH6283 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)20 Absolute Max. Power Diss. (W)160 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.2.0k


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    MJH6283 PDF

    mj150* darlington

    Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
    Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35


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    2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


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    BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 PDF