300 W NPN DARLINGTON POWER TRANSISTORS Search Results

Contextual Info: SPK1250 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)200 Absolute Max. Power Diss. (W)600 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.500

Contextual Info: MJH6284 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)160 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300

Contextual Info: DA11503008 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)500 V(BR)CBO (V) I(C) Max. (A)300 Absolute Max. Power Diss. (W)1.6k Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m¶ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.80

Contextual Info: PMD25K120 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)9.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0mØ» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300

Contextual Info: BU931ZP Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300

Contextual Info: BU931ZT Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300

Contextual Info: BU931Z Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300

Contextual Info: BU931ZTFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300

Contextual Info: BU931 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300

Contextual Info: BU931ZPFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300

Contextual Info: PMD25K150 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)9.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0mØ» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300

Contextual Info: BU931ZSM Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300

Contextual Info: BU931SM Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125# Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300

Contextual Info: BU931T Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125# Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300

Contextual Info: BU931P Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300

Contextual Info: MJ11028 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k

Contextual Info: 2SD1909 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)500 I(C) Max. (A)6 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)400 h(FE) Min. Current gain.200

Contextual Info: BU931TFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)40# Maximum Operating Temp (øC)150 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300

Contextual Info: BU931RPFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.

Contextual Info: 2SD1592 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)300 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400 h(FE) Max. Current gain.3.0k

Contextual Info: MJH6282 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)20 Absolute Max. Power Diss. (W)160 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.2.0k

Contextual Info: MJH6283 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)20 Absolute Max. Power Diss. (W)160 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.2.0k

mj150* darlington

Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including