300 W NPN DARLINGTON POWER TRANSISTORS Search Results

mj150* darlington

Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

Contextual Info: P h ilip s C o m p o n e n ts BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors PINNING - SO T199 D ESC R IP TIO N PIN NPN epitaxial base Darlington transistors for audio output stages

BDV67d

Abstract: BDV67DF
Contextual Info: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors philips international 5bE I I_I • 711082b 00433=18 33T BIPHIN T -3 3 -2 ^ PINNING - SOT199 DESCRIPTION

BDV65CF

Contextual Info: Philips Com ponents BDV65F/65AF/65BF/65CF D a ta s h e e t statu s Product specification d a te o f issue December 1990 NPN silicon Darlington power transistors PINNING - SOT199 DESCRIPTION PIN NPN epitaxial base transistors in a monolithic Darlington circuit for

711D

Contextual Info: PHILIPS INT ER NATIONAL Philips Components • 711002b 00M33bû bT2 « P H I N BDV65F/65AF/65BF/65CF Data sheet status SbE ]> Product specification NPN Silicon Darlington power transistors date of issue December 1990 PINNING - SOT199 DESCRIPTION PIN 1 2 3

BDS61A

Abstract: smd npn darlington smd JS 60n60b MC555 BDS61 BDS61B BDS61C IEC134 7SOT223
Contextual Info: PHILIPS INTERNATIONAL Philips C om ponents Data sheet status Product specification date of issue April 1991 SbE D • 711Qfi2b 004312b 3Û1 ■ PHIN T- 3 ? -2 BDS61/61 A/61 B/61C NPN Silicon Darlington power transistors DESCRIPTION PINNING - SOT223 PIN 1 2

32N45

Abstract: BDV65F Darlington NPN Silicon Diode 7277B BDV64F BDV65AF BDV65BF BDV65CF NPN POWER DARLINGTON TRANSISTORS SOT-199
Contextual Info: PHILIPS INTERNATIONAL Philips Com ponents T> m 711QÔEL 00433bû Product specification NPN Silicon Darlington power transistors date of issue December 1990 PINNING - SOT199 DESCRIPTION PIN 1 2 3 NPN epitaxial base transistors in a monolithic Darlington circuit for

Contextual Info: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general

Contextual Info: Philips Com ponents D a ta sh e e t s ta tu s Product specification d a te o f is s u e Apr# 1991 B D S 61/61A / 61B / 61C NPN silicon Darlington power transistors DESCRIPTION PINNING - SOT223 NPN silicon pow er transistors in a m onolithic Darlington circu it in a

IC 651

Abstract: BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651
Contextual Info: 5bE D PHILIPS INTERNATIONAL Philips Components B D S 643/645/647/649/651 Data sheet status Product specification date o f issue April 1991 m 7110ÛEb DQ4314b 17T • PHIN r-33-z^j NPN Silicon Darlington power transistors DESCRIPTION PINNING -SOT223 DESCRIPTION

STA471A

Abstract: pnp DARLINGTON TRANSISTOR ARRAY 2sa1694 2sc4467 2SC4153 equivalent NPN DARLINGTON TRANSISTOR ARRAY sib1044d 2SA1186 2SC2837 sta481a 2SC5287 equivalent 2SA1494 equivalent
Contextual Info: 2 Power Transistors 2-1. Power Transistors Transistors for Audio Amplifier • Transistors for Switch Mode Power Supply • Transistors for Humidifier • Transistor for Display Horizontal Deflection Output • Darlington Transistors • Low VCE sat • High h FE Transistors

BDV67DF

Abstract: BDV67CF BDV67B BDV67BF MC3774 BDV67AF NPN pnp MATCHED PAIRS BDV67C
Contextual Info: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of issue December 1990 NPN Darlington power transistors PHILIPS INTERNATIONAL I_ _ I 5bE m I 7110fi2b 00433=16 33T B P H I N 1 ^ 3 3 -2 ^ P IN N IN G - S O T 1 9 9

MJ10005

Abstract: 100 amp npn darlington power transistors MJ10004 10 amp npn darlington power transistors
Contextual Info: ¿Z&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10004 MJ10005 The MJ10004 and MJ10005 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

MJ10002

Abstract: MJ10003
Contextual Info: Ü&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN The MJ10002 and MJ10003 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

MJ10009

Abstract: 100 amp npn darlington power transistors 10 amp npn darlington power transistors MJ10008 LDLB 16 amp npn darlington power transistors MJ-10009 mj10 100 mhz hf diode 50 ampere MJ10008.10009
Contextual Info: /Z&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10008 The MJ10008 and MJ10009 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

MJ10014

Abstract: MJ10013 MJ-10013
Contextual Info: Ü&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN MJ10013 MJ10014 The MJ10013 and MJ10014 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

Seven Transistor Array PNP

Abstract: pnp DARLINGTON TRANSISTOR ARRAY pnp darlington array pnp 8 transistor array M54561P PNP DARLINGTON ARRAYS darlington Mitsubishi npn tr array npn 8 transistor array NPN darlington array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54561P is seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform

MJ10006

Abstract: MJ10007 umi 150 5A 250V 5 amp npn darlington power transistors MJ-10006 MJ-10007
Contextual Info: ÆàMOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10006 MJ10007 The MJ10006 and MJ10007 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

MJ10012

Abstract: MJ-10012 100 amp darlington power transistors
Contextual Info: /Z&MOSPEC NPN SILICON POWER DARLINGTON TRANSISTORS The MJ10012 is a high voltage, high-current darlington transistor designed for automotive ignition,switching regulator and motor con­ trol applications. FEATURES: Continuous Collector Current - lc = 10 A

60 amp npn darlington power transistors

Abstract: MJ10023 5 amp npn darlington power transistors MJ10022 application MJ10023
Contextual Info: ÆàMOSPEC SW ITCHMODE SERIES NPN SILICON PO W ER DARLINGTON TRANSISTORS WITH BASE-EM ITTER S PEED U P DIODE NPN MJ10022 The MJ10022 and MJ10023 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper

DARLINGTON 30A 100V npn

Contextual Info: CJD122 NPN CJD127 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122 and CJD127 are complementary silicon power Darlington transistors manufactured in a surface mount package

MJ10020

Abstract: MJ10021 mj1002
Contextual Info: Æ&m o s p e c SWITCH MODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10020 The MJ10020 and MJ10021 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper