30-PIN 9-BIT RAM MODULE Search Results

30-pin simm memory "16m x 8"

Contextual Info: STI916100 30-PIN SIMMS 1 6 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI916100 is a 16M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI916100 consist of nine CMOS 16M x 1 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A

HM511000

Contextual Info: HB56A19L S eries-1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56A19 is a 1M x 9 dynamic RAM module, mount­ ed nine 1 Mbit DRAM HM511000ALJP sealed in SOJ pack­ age. An outline of the HB56A19 is 30-pin single in-line pack­

HB56A169

Contextual Info: HB56A169 Series 16,777,216-word x 9-bit High Density Dynamic RAM Module The HB56A169 is a 16 M × 9 dynamic RAM module, mounted 9 pieces of 16-Mbit DRAM HM5116100AS sealed in SOJ package. An outline of the HB56A169 is 30-pin single in-line package. Therefore, the HB56A169 makes high

Contextual Info: HB561409 Series-262,144-word x 9-bit Dynamic Random Access Memory Module The HB561409 is a 256k x 9 dynamic RAM module, mounted 9 pieces of 256k-bit DRAM HM51256CP sealed in PLCC package. An outline of the HB561409 is 30-pin single in-line package having two types; Lead type (HB561409A) and Socket

EADS-80

Contextual Info: TM4100EAD9 4194304 BY 9-BIT DYNAMIC RAM MODULE SMMS419C - NOVEMBER 1991 - REVISED JUNE 1995 Organization . . . 4194304 x 9 SINGLE IN-LINE MODULE Single 5-V Power Supply ±10% Tolerance (TOP VIEW) 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets

30-pin SIMM RAM

Contextual Info: STI94000 30-PIN SIMMS 4M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI94000 is a 4M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI94000 consist of nine CMOS 4 M x 1 DRAMs in 20-pin SOJ package

333z

Abstract: 333z capacitor 00A80
Contextual Info: STI91OOOA 30-PIN SIMMS 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI91000A is a 1M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI91 OOOA consist of two CMOS 1M x 4 DRAMs in 20-pin SOJ package and one CMOS 1M x 1 DRAM in 20-pin SOJ package

TMS4256FML

Abstract: tms4256 256Kx1 dRAM
Contextual Info: ADVANCE INFORMATION TM4256GP9, TM4256GV9 262.144 BY 9-BIT DYNAMIC RAM MODULES OCTOBER 1 9 8 5 - • 2 6 2 .1 4 4 X 9 Organization • Single 5-V Supply 10% Tolerance V SINGLE-IN-LINE PACKAG E f ITOP VIEW) 30-Pin Single-in-Line Package (SIP) —Pinned Module for Through-Hole

pd42256

Abstract: 256k 30-pin SIMM
Contextual Info: NEC MC-42256AB9 262,144 x 9-Bit Dynamic CMOS RAM Module N E C E le c tro n ics Inc. Description Pin Configurations The M C-42256AB9 is a 262,144-word by 9-bit DRAM module designed to o perate from a single + 5 -v o lt pow er supply. The m odule is a 30-p in socket-m ountable

CHN 920

Abstract: CHN 522 chn 702 TMS4257FML TMS4256FML KA614 S1985
Contextual Info: TM4256EL9, TM4256GU9, TM4257EL9, TM4257GU9 262,144 BY 9-BIT DYNAMIC RAM MODULES SEPTEMBER 1 9 8 5 T M 4 2 5 _ E L 9 . . . L S IN G LE -IN -LIN E PA CK A G E 2 6 2 ,1 4 4 X 9 Organization TOP V IE W Single 5-V Supply (10% Tolerance) 30-Pin Single-in-Line Package (SIP)

Contextual Info: HB56C19A/AT/B-8A/10A/12A 1,048,576-Word x 9-Bit High Density Dynamic RAM Module Pin No. • DESCRIPTION Pin Name Pin No. Pin Name 1 Vcc 16 dq4 2 CS 17 3 DQo 18 A8 a9 4 Ao 19 NC 5 A, 20 dq5 6 DQ, 21 WE 7 A2 22 Vss ■ FEATURES 8 A3 23 dq6 • 30-Pin Single In-Line Package

Contextual Info: •<H gJSÄSÄJI H Y M 5C 9256 256KX 9-Bit CMOS DRAM MODULE M421202A-APR91 DESCRIPTION The HYM5C9256 is a 256K words by 9 bits dynam ic RAM m odule and consists o f nine HY53C256LF Fast Page m ode CM OS DRAM s in 18 pin PLCC package mounted on a 30 pin glass-epoxy printed circuit board. 0.22pF de­

TM497EU9

Abstract: TMS417400 TMS417400DJ TMS44100
Contextual Info: TM497EU9 4194304-WORD BY 9-BIT DYNAMIC RAM MODULE SMMS499A – FEBRUARY 1994 – REVISED JUNE 1995 D D D D D D D D Organization . . . 4 194 304 x 9 Single 5-V Power Supply ±10% Tolerance 30-Pin Single-In-Line Memory Module (SIMM) for Use With Sockets Utilizes One 4-Megabit and Two 16-Megabit

TMS4100

Abstract: TM4100EBD9
Contextual Info: TM4100EBD9 4 194 304 BY 9-BIT DYNAMIC RAM MODULE REV A SM M S409A vcc 4 194 304 x 9 Organization CAS DQ1 AO A1 DQ2 A2 A3 30-Pin Single-ln-Line Package SIP — Leadiess Module for Use with Sockets Utilizes Nine 4-Megabit Dynamic RAMs in Plastic Small-Outline J-Lead (SOJ)

TMS44100DJ

Contextual Info: TM497EAD9B 4 194 304-WQRD BY 9-BIT DYNAMIC RAM MODULE S M M S 4 7 9 -D E C E M B E R 1992 Organization. . . 4194 304 x 9 AO SINGLE-IN-LINE P AC KA G Et TOP VIEW 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets V cc CAS DQ1 A0 A1 DQ2 A2 A3

1A43

Abstract: 4464 ram m4464 4464 64k 4464 texas
Contextual Info: ADVANCE INFORMATION TM4464LU8 65,536 BY 8 BIT DYNAMIC RAM MODULE OCTOBER 9 1 8 5 - • 6 5 .53 6 X 8 Organization REVISED NOVEMBER 1 9 8 5 U SINGLE-IN-LINE PACKAGE t o p v ie w i Single 5-V Supply (10% Tolerance 30-Pin Singie-in-Line Package (SIP) Utilizes Two 64K X 4 Dynamic RAMs in

hyundai tv hy 22 f circuit

Abstract: c 144 ESS HYM5C9256
Contextual Info: HYUNDAI ELECTRONICS 3TE D • >4b7SGñó G D G Ü 3 S Ö 4 ■ HYNK 256K*9-Bit CMOS DRAM MODÍIfc&’ M421202A-APR91 DESCRIPTION The HYM5C9256 is a 256K words by 9 bits dynamic RAM m odule and consists o f nine HY53C256LF Fast Page mode CM OS DRAM s in 18 pin PLCC package mounted on a 30 pin

Contextual Info: TM4100EAD9 4 194 304 BY 9-BIT DYNAMIC RAM MODULE SM M S 4 1 9 A -N 0 V E M B E R 1991-REVISED JA N U A R Y 1993 Organization . . . 4 194 304 x 9 S IN G L E IN-LINE M O D U L E t TO P VIEW Single 5-V Power Supply (±10% Tolerance) 30-Pin Single In-Line Memory Module

Contextual Info: AD VA N C E INFORM ATION TM4256FL8, TM4256GU8. TM4257FLB, TM4257GU8 262.144 BY 8-BIT DYNAMIC RAM MODULES OCTOBER 1 9 8 5 - • 2 6 2 ,1 4 4 X 8 Organization • Single 5-V Supply 10% Tolerance • 30-Pin Single-in-Line Package (SIP) —Pinned Module for Through-Hole Insertion

GMM794000

Abstract: GMM79400
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM794000CS is a 4M x 9 bits Dynamic RAM Module which is assembled 9 pieces of 4M bit DRAM GM71C4100CJ, 4Mxl in 20/26 pin small out-line J-form on a 30 p in s i n g l e i n - l i n e p a c k a g e . Th e GMM794000CS is a socket type memory

Contextual Info: 4,194,304 Word by 9 Bit CMOS Dynamic Random Access Memory MICROCIM T CORPORATION DESCRIPTION The Accutek AK594096 high density memory module is a CMOS dynamic RAM organized in 4 Meg x 9 bit words. The assembly consists of two 4 Meg x 4 DRAMS and one 4 Meg x 1 DRAM, in

AK594096BS

Abstract: AK594096BG
Contextual Info: AK594096BS / AK594096BG 4,194,304 Word by 9 Bit CMOS Dynamic Random Access Memory ACCUTEK MICROCIRCUIT CORPORATION Front View DESCRIPTION 30-Pin SIM The Accutek AK594096 high density memory module is a CMOS random access memory organized in 4 Meg x 9 bit words. The assembly consists of two 4 Meg x 4 and one 4 Meg x 1 DRAMs,

30 pin simm memory

Abstract: 30 pin 9-bit simm memory simm 30-pin 9-bit
Contextual Info: AK59256S/AK59256G 262,144 x 9 bit CMOS Dynamic Random Access Memory ACCUTEK MICROCIRCUIT DESCRIPTION The Accutek AK59256 high density memory module is a random access memory organized in 256K x 9 bit words. The assembly consists of two 256K x 4 and one 256K x 1 DRAMs

Contextual Info: R EM MICROELECTRONIC - MARIN SA V3023 Very Low Power 8-Bit 32 kHz RTC Module with Digital Trimming, User RAM and High Level Integration Description The V3023 is a low power CMOS real time clock with a built in crystal. Standby current is typically 1.2 µA and the