30 FGS Search Results

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

76145s

Abstract: 76145P TA7614 P U 14 HUF76145
Contextual Info: HUF76145P3, HUF76145S3, HUF76145S3S S em iconductor November 1998 Data Sheet 75A, 30 V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

T730-012EL8

Abstract: T511-012EL8 T511T-012 T406-011EL8 T506-012EL8 pp031 T730T-012 T406-012EL8 T720-012 T404-011EL8
Contextual Info: Ê- ,6"Ê-9-/ - 3 Ver. Simplified Setup Process for Optimum Operating Conditions Auto-Tuning Test Function JOG A new auto-tuning algorithm improves system response by providing functions such as inertia identification, 5 autotuning modes, 30 levels of response, and parameter setting

E3Z-T61-D

Abstract: E3Z-T61-L E3Z-R61 E3Z-T61 E3Z-T81 E3Z-T86 E3Z-T86-L E3Z-L E3Z-T81-L E3Z-T61-D 2M
Contextual Info: Compact Photoelectric Sensor with Built-in Amplifier E3Z CSM_E3Z_DS_E_14_1 The Standard for Photoelectric Sensors with a Secure Track Record of One Million Sold Yearly. • Long sensing distance of 30 m for Through-beam Models, 4 m for Retro-reflective Models, and 1 m for Diffuse-reflective Models.

YUSHIRO

Abstract: E3Z-T61-D E3Z-T81 E3Z-T86-L E3Z-T81-D E3ZB86 OMRON E3Z-T61 E3Z-T86 E3Z-T61-L E3Z-L61
Contextual Info: Compact Photoelectric Sensor with Built-in Amplifier E3Z CSM_E3Z_DS_E_13_1 The Standard for Photoelectric Sensors with a Secure Track Record of One Million Sold Yearly. • Long sensing distance of 30 m for Through-beam Models, 4 m for Retro-reflective Models, and 1 m for Diffuse-reflective Models.

E3Z-T86-D

Abstract: E3Z-T61-D E3Z-T82-L E3Z-T87-D E3Z-T86-A-D E3Z-T61K-D E3Z-T81K-D E3Z-T61A-L 2M E3Z-L63 E3Z-T81-D
Contextual Info: Compact Photoelectric Sensor with Built-in Amplifier E3Z CSM_E3Z_DS_E_15_1 The Standard for Photoelectric Sensors with a Secure Track Record of One Million Sold Yearly. • Long sensing distance of 30 m for Through-beam Models, 4 m for Retro-reflective Models, and 1 m for Diffuse-reflective Models.

YUSHIROKEN

Abstract: E3Z-T61-D E3Z-T61-L E3Z-l63 E3Z-LS86 E3Z-T86-D E3Z-R86 0.5M E3z-l61 2m E3Z-T81-D E3Z-R86
Contextual Info: Compact Photoelectric Sensor with Built-in Amplifier E3Z CSM_E3Z_DS_E_12_1 The Standard for Photoelectric Sensors with a Secure Track Record of One Million Sold Yearly. • Long sensing distance of 30 m for Through-beam Models, 4 m for Retro-reflective Models, and 1 m for Diffuse-reflective Models.

DSPIC33FJ256GP710A

Abstract: DS70195 DS70206 DS70288 DS70182 DS70183 DS70194 microchip pwm sound dma example compare output DS70184 DS70209
Contextual Info: dsPIC33FJXXXGPX06A/X08A/X10A 16-bit Digital Signal Controllers up to 256 KB Flash and 30 KB SRAM with Advanced Analog Operating Conditions Timers/Output Compare/Input Capture • 3.0V to 3.6V, -40ºC to +150ºC, DC to 20 MIPS • 3.0V to 3.6V, -40ºC to +125ºC, DC to 40 MIPS

Contextual Info: dsPIC33FJXXXGPX06A/X08A/X10A 16-bit Digital Signal Controllers up to 256 KB Flash and 30 KB SRAM with Advanced Analog Operating Conditions Timers/Output Compare/Input Capture • 3.0V to 3.6V, -40ºC to +150ºC, DC to 20 MIPS • 3.0V to 3.6V, -40ºC to +125ºC, DC to 40 MIPS

BUZ171

Contextual Info: SIEMENS 10427 SIPMOS Power Transistor BUZ 171 • P channel • Enhancement mode • Avalanche rated Type BUZ 171 VDS -5 0 V Id -8 .0 A ^OS on 0.3 Q Package 1> Ordering Code TO-220 AB C67078-S1450-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 30 *C

DS70208

Abstract: ds70184 DS70187 Automatic voltage regulator RBS DS70209 22 n M 275V 338 X2 DISPLAY 7 SEGMENTS LED CA ds70188 DS70185 ds70205
Contextual Info: dsPIC33FJXXXMCX06A/X08A/X10A 16-bit Digital Signal Controllers up to 256 KB Flash and 30 KB SRAM with Motor Control and Advanced Analog Operating Conditions Timers/Output Compare/Input Capture • 3.0V to 3.6V, -40ºC to +150ºC, DC to 20 MIPS • 3.0V to 3.6V, -40ºC to +125ºC, DC to 40 MIPS

Contextual Info: dsPIC33FJXXXMCX06A/X08A/X10A 16-bit Digital Signal Controllers up to 256 KB Flash and 30 KB SRAM with Motor Control and Advanced Analog Operating Conditions Timers/Output Compare/Input Capture • 3.0V to 3.6V, -40ºC to +150ºC, DC to 20 MIPS • 3.0V to 3.6V, -40ºC to +125ºC, DC to 40 MIPS

u1899

Abstract: U1897 U1898 U1897-U1 U1898J
Contextual Info: DMÜ^DIL U 1 8 9 7 -U 1 8 9 9 N -C hannel JFIET FEATURES PIN CONFIGURATION • Low insertion Loss fDS on <30ß (Ü1897) • No Error or Offset Voltage Generatod by Closed Switch CHIP TOPOGRAPHY TO-92 x f "" 5001B "I'v, O i l F U i L RADIUS APPLICATIONS Analog, Switches, Choppers, Communicators

es relay RAS 1210

Abstract: relay ras 1210 ITE 8510 PEC 5099 janm ME 1117 voltage regulator SH-A1 TL 8H3 IC marking pp jw DTH schematic diagram
Contextual Info: | INCH-ROUND! MI L - M - 3 8 5 1 0 / 1 2 6B 30 December 1988 njPTRsnmrc M I L - M - 3 8 5 1 0 / 126A 9 May 1988 MILITARY S P E C I FICATION M I C R O C I R C U I T S , LINEAR, REGULATING, PULSE-WIDTH MO DULATOR, M O NOLITHIC S ILICON This s p e c i f i c a t i o n 1s approved for use by all D e p a r t ­

SICK PROXIMITY SWITCH WL12-2P430

Abstract: WL12-2B560 WL12G-P530 SICK 30 fgs WT12-2P410 WL12-2P430 wt12 2p460 wt12-2p440 WT12-2P430 sick wt12-2p410
Contextual Info: Product group W12-2 Photoelectric proximity switch FGS Photoelectric proximity switch BGS W12-2: Fantastic performance - years of experience Photoelectric proximity switch energ. The WL12 G "glass photoelectric switch" designed for filling systems used in the beverage industry, represents more than just a technical advance. This intelligent sensor

Marking Code FGs

Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23

E3Z-LS81

Abstract: E3Z-LS63 E3Z-LS86 LS86 E3Z-LS61 E3Z-LS66 XS3F-M421-402-A LS698 TRANSISTOR FGs
Contextual Info: Distance-settable Photoelectric Sensor E3Z-LS CSM_E3Z-LS_DS_E_3_1 Reliable Detection of Glossy, Uneven Objects Regardless of Background or Color. • Switching between background and foreground suppression BGS/ FGS enables detecting a variety of objects under various

fgs npn

Abstract: BCV26 BCV27 BCV46 BCV47
Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23

MARKING CODE AGS

Abstract: TRANSISTOR BSP 2000
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • • ID Fds 240 V 0.2 A • ^ D S o n 20 Q • • • • N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code BSP 129 Tape and Reel Information Pin Conf igura tion Marking

FLUXGATE

Abstract: fluxgate sensor DIGITAL FLUXGATE Fluxgate Magnetic Field Sensor nf schaltungen fluxgate compass schaltungen
Contextual Info: Frauenhofer Institut Mikroelektronische Schaltungen und Systeme Duisburg . Dresden . Münschen FGS1/COB_07 X-Y-Two-Axes Magnetic Field Sensor System Features Due to the changes of magnetic flux inside the core a voltage is induced in the pick-up coils. The second harmonic

Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors 3
For general AF applications
High collector current
High current gain
Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23

Contextual Info: BCV27, BCV47 NPN Silicon Darlington Transistors • For general AF applications • High collector current 2 3 • High current gain 1 • Complementary types: BCV26, BCV46 PNP Type Marking Pin Configuration Package BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs

BCV27

Abstract: BCP SOT23
Contextual Info: BCV 27, BCV 47 NPN Silicon Darlington Transistors 3 • For general AF applications • High collector current • High current gain • Complementary types: BCV 26, BCV 46 PNP 2 1 Type Marking Pin Configuration BCV 27 FFs 1=B 2=E 3=C SOT-23 BCV 47 FGs 1=B