3.3B Search Results

RH1021BMH-5

Abstract: RH1021-5 RH1021CMW-5 TO5 package RH1021CMH-5 RH1021DMH-5 TM1019
Contextual Info: SPEC NO. 05-08-5016 REV A B C D E F REV. P RH1021-5, PRECISION 5V REFERENCE REVISION RECORD DESCRIPTION INITIAL RELEASE • PAGE 2, ADDED PARAGRAPHS 3.2.1, 3.2.2, AND 3.2.3. PARAGRAPH 3.3b, ADDED “ SEE PARAGRAPH 3.2 ”. • PAGE 4, PARAGRAPH 3.12, WAFER LOT ACCEPTANCE REDEFINED. PARAGRAPH 4.4.2,

MIC29302

Abstract: TO263-5 MIC29151 MIC2941A MIC29201 0343 0617 pb 0617 MIC29302WU 3.3BU
Contextual Info: TO-263 PACKAGE REL MONITOR DATA High Temperature Storage Life +150 deg C, 1000 hours Device Lot No Pkg MSL Soak MIC29302 WU 6A04417 TO-263-5 L3 MIC29302 YU 6A10125MEB TO-263-5 L3 MIC29201 3.3BU A203232MEA TO-263-5 n/a MIC29151 3.3WU 3A18105M09 TO-263-5 n/a

RH1021CMW-5

Abstract: RH1021BMH-5 RH1021CMH-5 RH1021-5 RH1021CMW rh1021 RH1021DMH-5 TM1019 si 4422 MIL-PRF-38535, appendix A
Contextual Info: SPEC NO. 05-08-5016 REV A B C D E F REV. N RH1021-5, PRECISION 5V REFERENCE REVISION RECORD DESCRIPTION INITIAL RELEASE • PAGE 2, ADDED PARAGRAPHS 3.2.1, 3.2.2, AND 3.2.3. PARAGRAPH 3.3b, ADDED “ SEE PARAGRAPH 3.2 ”. • PAGE 4, PARAGRAPH 3.12, WAFER LOT ACCEPTANCE REDEFINED. PARAGRAPH 4.4.2,

RH1021-5

Abstract: RH1021BM-5 RH1021BMH-5 RH1021CMH-5 RH1021DMH-5
Contextual Info: SPEC NO. 05-08-5016 REV A B C D E F REV. L RH1021-5, PRECISION 5V REFERENCE REVISION RECORD DESCRIPTION INITIAL RELEASE • PAGE 2, ADDED PARAGRAPHS 3.2.1, 3.2.2, AND 3.2.3. PARAGRAPH 3.3b, ADDED “ SEE PARAGRAPH 3.2 ”. • PAGE 4, PARAGRAPH 3.12, WAFER LOT ACCEPTANCE REDEFINED. PARAGRAPH 4.4.2,

Contextual Info: Freescale Semiconductor, Inc. Order number: MC100ES6111 2, 08/2004 DATARevSHEET TECHNICAL DATA Low Voltage 2.5/3.3 V Differential ECL/PECL/HSTL Low Voltage Fanout 2.5/3.3Buffer V Differential The MC100ES6111 is a bipolar monolithic differential clock fanout buffer.

Contextual Info: Freescale Semiconductor, Inc. TECHNICAL DATA Low Voltage 2.5/3.3 V Differential ECL/PECL/HSTL Low Voltage Fanout 2.5/3.3Buffer V Differential The MC100ES6210 is a bipolar monolithic differential clock fanout buffer. Designed for most demanding clock distribution systems, the MC100ES6210

SUD50NP04-77P

Abstract: TO-252-4L 74439 complementary MOSFET TO252
Contextual Info: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V

FHDC400

Abstract: tc8560
Contextual Info: BOARD PRODUCTS FHDC400 Hard Disk Controller Board 1. G E N E R A L D ESC R IP T IO N FHDC400 is a h ard disk controller board which is used to operate on IBM PC/XT type bus interface level is CMOS and has CMOS type drive interface. 2. FEA T U R ES □ Low power consum ption

Contextual Info: MIC2210 Micrel MIC2210 Dual µCap LDO with Open-Drain Driver Final General Description Features The MIC2210 is a dual µCap low dropout regulator with an open-drain driver and power-on reset circuit. The first regulator is capable of sourcing 150mA, while the second regulator can source up to 300mA and includes a power-on reset

Contextual Info: User's Guide SLUU328 – August 2008 TPS2358 Dual-Slot ATCA AdvancedMC™ Controller Evaluation Module 1 Introduction The Dual-Slot AdvancedMC™ Controller Evaluation Module EVM is a PCB platform for users to learn about the features and operation of the TPS2358 integrated circuit from Texas Instruments (TI). The

si7615

Abstract: SI7615ADN SI7615A
Contextual Info: New Product Si7615ADN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0044 at VGS = - 10 V - 35a 0.0060 at VGS = - 4.5 V - 35a 0.0098 at VGS = - 2.5 V a Qg (Typ.) 59 nC - 35 APPLICATIONS PowerPAK 1212-8

Contextual Info: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.)

Contextual Info: Si7186DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 80 0.0125 at VGS = 10 V 32g a • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance www.vishay.com/doc?99912

Contextual Info: SiRA34DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0067 at VGS = 10 V 40 0.0098 at VGS = 4.5 V 40 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • • • • 5.15 mm 1 S 2 S 3 • TrenchFET® Gen IV Power MOSFET

0.35mm pitch BGA

Abstract: MR4A08BCYS35R MR4A08B MR4A08BC mr4a08bcys MR4A08BCYS35
Contextual Info: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages

Si7489DP

Abstract: Si7489DP-T1-E3 Si7489DP-T1-GE3
Contextual Info: Si7489DP Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.041 at VGS = - 10 V - 28 0.047 at VGS = - 4.5 V - 28 VDS (V) - 100 Qg (Typ.) 54 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

SC-70-6

Abstract: SiA513DJ SiA513DJ-T1-GE3
Contextual Info: New Product SiA513DJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel RDS(on) (Ω) Qg (Typ.) a 0.060 at VGS = 4.5 V 4.5 0.092 at VGS = 2.5 V 4.5a 0.110 at VGS = - 4.5 V - 4.5a 0.185 at VGS = - 2.5 V - 4.5a

Si7186DP

Abstract: Si7186DP-T1-E3
Contextual Info: New Product Si7186DP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 80 0.0125 at VGS = 10 V 32g 46 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS

Contextual Info: SiE818DF Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling

Contextual Info: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

S7267

Abstract: SIE854DF
Contextual Info: New Product SiE854DF Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package

Contextual Info: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: SUD50N04-06P Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.0065 at VGS = 10 V 20 0.008 at VGS = 4.5 V 20 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 53.6 nC COMPLIANT

wt32

Abstract: bv32 STM PRODUCTS REL4 WT21 FR30 MB91101 MB91103 QFP-100 st microelectronics Transistor "" space vecter PWM
Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM71-10102-1E FR30 32-BIT MICROCONTROLLER MB91101 SERIES HARDWARE MANUAL PREFACE n Objectives and Intended Readership The MB91101 was developed as a product in the FR30 family of 32-bit, single-chip microcontrollers. The MB91101 contains a new RISC architecture CPU core and is suitable for