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    3 A SMD TRANSISTOR Search Results

    3 A SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX330BH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN PDF
    BLM15PX600SH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN PDF
    BLM21HE601SN1L
    		Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm NONAUTO PDF
    BLM21HE472BH1L
    		Murata Manufacturing Co Ltd FB SMD 0805inch 4700ohm POWRTRN PDF
    BLM15PX330SH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN PDF

    3 A SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY


    Original     		PHPT61003NY OT669 LFPAK56) PHPT61003PY AEC-Q101 PDF

    Contextual Info: IC IC SMD Type MOS Field Effect Transistor KPA2790GR Features Low on-state resistance N-channel RDS on 1 = 28 m MAX. (VGS = 10 V, ID = 3 A) RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 m RDS(on)2 = 80 m MAX. (VGS = -10 V, ID = -3 A)


    Original     		KPA2790GR PDF

    Contextual Info: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PBSS5260QA DFN1010D-3 OT1215) PBSS4260QA. AEC-Q101 PDF

    Contextual Info: DF N1 01 0D -3 PBSS5230QA 30 V, 2 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PBSS5230QA DFN1010D-3 OT1215) PBSS4230QA. AEC-Q101 PDF

    Contextual Info: DF N1 01 0D -3 PBSS5130QA 30 V, 1 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PBSS5130QA DFN1010D-3 OT1215) PBSS4130QA. AEC-Q101 PDF

    Contextual Info: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PBSS4260QA DFN1010D-3 OT1215) PBSS5260QA. AEC-Q101 PDF

    Contextual Info: DF N1 01 0D -3 PBSS4160QA 60 V, 1 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PBSS4160QA DFN1010D-3 OT1215) PBSS5160QA. AEC-Q101 PDF

    Contextual Info: DF N1 01 0D -3 PBSS5160QA 60 V, 1 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PBSS5160QA DFN1010D-3 OT1215) PBSS4160QA. AEC-Q101 PDF

    Contextual Info: DF N2 020 D-3 PBSS5330PAS 30 V, 3 A PNP low VCEsat BISS transistor 11 September 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic


    Original     		PBSS5330PAS DFN2020D-3 OT1061D) PBSS4330PAS PDF

    Contextual Info: DF N2 020 D-3 PBSS4330PAS 30 V, 3 A NPN low VCEsat BISS transistor 11 September 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic


    Original     		PBSS4330PAS DFN2020D-3 OT1061D) PBSS5330PAS PDF

    transistor smd wz

    Contextual Info: SO T8 83 NX7002BKM 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		NX7002BKM DFN1006-3 OT883) transistor smd wz PDF

    Contextual Info: SO T2 3 PMV45EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PMV45EN2 O-236AB) PDF

    Contextual Info: SO T2 3 PMV37EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PMV37EN2 O-236AB) PDF

    2n06l05

    Abstract: 2N06L SPI80N06S2L-05 ANPS071E SPB80N06S2L-05 SPP80N06S2L-05
    Contextual Info: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode RDS on max. SMD version 4.5 mΩ ID 80 A • Logic Level • Avalanche rated P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1


    Original     		SPI80N06S2L-05 SPP80N06S2L-05 SPB80N06S2L-05 SPP80N06S2L-05 Q67040-S4246 Q67040-S4256 2N06L05 Q67060-S7422 2n06l05 2N06L SPI80N06S2L-05 ANPS071E SPB80N06S2L-05 PDF

    ANPS071E

    Abstract: SPB100N04S2L-03 SPP100N04S2L-03
    Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level V 3 mΩ 100 P- TO263 -3-2 • 175°C operating temperature 40 A P- TO220 -3-1 • Avalanche rated


    Original     		SPP100N04S2L-03 SPB100N04S2L-03 SPP100N04S2L-03 Q67060-S6038 SPB100N04S2L-03 Q67060-S6039 PN04L03 BSPP100N04S2L-03 BSPB100N04S2L-03, ANPS071E PDF

    4P03L07

    Abstract: smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse
    Contextual Info: IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 6.9 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L07 IPI80P03P4L-07 4P03L07 smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse PDF

    4P03L04

    Abstract: 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l
    Contextual Info: IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.1 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L04 IPI80P03P4L-04 4P03L04 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l PDF

    Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB75UPE DFN1010D-3 OT1215) PDF

    Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB65UPE DFN1010D-3 OT1215) PDF

    Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB56EN DFN1010D-3 OT1215) PDF

    Contextual Info: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB65ENE DFN1010D-3 OT1215) PDF

    Contextual Info: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB120EPE DFN1010D-3 OT1215) PDF

    Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB40UNE DFN1010D-3 OT1215) PDF

    Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PMXB40UNE DFN1010D-3 OT1215) PDF