2Z27 Search Results

smd 1gw

Abstract: diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42
Contextual Info: a SELECTOR GUIDE The following products are recommended for use in any new circuitry designs. General Purpose Rectifiers —> Peak Repetitive Reverse Voltage 600V 1000V 1S 1887 1S 1888 1S 1830 S5277B S5277G S5277J S5277N D O -41S S5566B S5566G S5566J S5566N

2z47

Contextual Info: T O S H IB A 2 Z 1 2 -2 Z 5 1 TOSHIBA ZENER DIODE TENTATIVE SILICON DIFFUSED TYPE 2Z12-2Z51 Unit in mm CONSTANT VOLTAGE REGULATION. RANSIENT SUPPRESSORS. Average Power Dissipation : P = 1.5W Peak Reverse Power Dissipation : P r SM = 900W at ^ = 200^8 Zener Voltage : = 12~51V

DS1217

Contextual Info: Formosa MS Chip Zener Diode ZGFM206V8B THRU ZGFM20200B List List. 1 Package outline. 2

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

1ZB36

Abstract: 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ
Contextual Info: 1 PART NUMBER INDEX P art No. 05B4B48 05G4B48 05GU4B48 05J4B48 05NH45 05NH46 05NU41 05NU42 0R8GU41 100G6P43 100L6P43 100Q6P43 100U6P43 10B4B41 10DL2C41A 10DL2C48A 10DL2CZ47A 10FL2C48A 10FL2CZ47A 10G4B41 10GL2CZ47A 10GWJ2C48C 10GWJ2CZ47C 10J4B41 10JL2CZ47 10JWJ2CZ47

zener diode 332

Abstract: 128 zener diode 2z16 735 zener 13.5 v zener diode
Contextual Info: SILICON DIFFUSED JUNCTION TYPE ZENER DIODE 2 2 1 2 ^ 2 Z 5 1 Unit in mm TRANSIENT SUPPRESSORS. 'S . Peak Reverse Power Dissipation • Pr SM=600W/lmsec expo. . Zener Voltage : Vz=12*5lV . Plastic Mold Package CATHODE MARK 00.8 MAXIMUM RATINGS CHARACTERISTIC

1ZB36

Abstract: DIODE 1zb36 1ZB36 zener zener 150v 1w 120V 1W Zener Diode 3Z27 DIODE 1ZB20 zener zener diode 6.2v 1w ZENER 68V 1W 1Z150
Contextual Info: POWER ZENER Diode -> Power Dissipation F2.L3 Zener Voltage «- 1W Pacakae DO-41 SS DO-15 3W 5W DO-15L DO-201 AD _ 6.2V 1Z6.2 6.8V 7.5V 1Z6.8, 1Z6.8A 1ZB6.8 1Z7.5, 1Z7.5A 1ZB7.5 8.2V 1Z8.2, 1Z8.2A 1ZB8.2 9.1V 1Z9.1, 1Z9.1A 1ZB9.1 10V 1Z10, 1Z10A 1ZB10 11V 1Z11, 1Z11A

Contextual Info: n i c l i i co n ALUMINUM ELECTROLYTIC CAPACITORS Approved by Reliability Center tar Electronic Component, Japan-Certification No. RCJ-Q3-25D Snallar RCJ Apprised ALUM MUM ELECTROLYTIC CAPACITORS LU Snap-in Terminal Type, Small-Sized 1 W ithstanding 3000 hours application of ripple current at 8 5 C .

Contextual Info: MOSEL MS621000 A D V A N C E IN F O R M A T IO N 1048576 131,072 x 8 CMOS Static RAM with Data Retention and Low Power FEATURES DESCRIPTION • Available in 8 0 /1 0 0 /1 2 0 ns (M ax.) T h e M O S E L M S 6 2 1 0 0 0 is a high perform ance, low power C M O S static R A M organized as 1 3 1 ,0 7 2 words by 8 bits.

zener diode 1NU 9F

Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Contextual Info: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:

Zener diode 18A

Abstract: ZENER 18A 27a zener diode diode zener t 27a
Contextual Info: SILICON DIFFUSED TYPE ZENER DIODE 2Z16A/18A/27A Unit in m m TRANSIENT SUPPRESSOR FEATURES : . Peak Reverse • Power Dissipation P R S M = 6 0 0 W / l m s e c expo. . Zener Voltage : V ^ = 1 6 — 27V . Plastic Mold Package MAXIMUM RATINGS CHARACTERISTIC SYMBOL

1gw transistor

Abstract: TSA1000 1J4B41 1G4B41 1B4B41 magnetron power control scr driver ic for rectifier 3 phase scr drive circuit diagram 4G4B41 1B4B42
Contextual Info: mAPPLICATION CIRCUIT 1. Igniter . 448 2. Strobe . 449

2Z12

Abstract: 2Z13 2Z15 2Z16 2Z16A 2Z18 2Z18A 2Z20 1.5W zener diode WB3C
Contextual Info: TO SHIBA 2Z12-2Z51 TOSHIBA ZENER DIODE TENTATIVE CONSTANT VOLTAGE REGULATION. SILICON DIFFUSED TYPE 2Z12-2Z51 Unit in mm TRANSIENT SUPPRESSORS. • • Average Power Dissipation : P = 1.5W Peak Reverse Power Dissipation : P r SM = 900W at tw = 200/^s • Zener Voltage : Vz = 12~51V

2N7002DM

Abstract: kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252
Contextual Info: - p. <11 « P.02 Cover Page P. 29 DC-DC +1.25V P4 478 P.30 DC-DC +2.5V P. 31 Battery P. 32 Charger 1 of 2 P.03 P4 4 78 - PWR & GND (2 of 2) P.04 NB VT8703 - Host, CRT and TV Interface P.05 NB VT8703 - Memory Interface P.06 NB VT8703 - LVDS, (1 of 3) (2 of 3)

DS1217

Contextual Info: Formosa MS Chip Zener Diode ZGFM206V8B THRU ZGFM20200B List List. 1 Package outline. 2

LZ16A

Abstract: 1ZM50 1ZM30 1ZB240-Y 1ZB240-Z 1ZB270-X 1ZB270-Y 1ZB270-Z 1ZB300 1ZB300-X
Contextual Info: - "J m 12B240 1ZB240-Y 1ZB240-Z 1ZB270 1ZB270—X 1ZB270-Y 1ZB270-Z 1ZB300 1ZB300-X 1ZB30Û-Y 1ZB300-Z 1ZB330 1ZB330-X 1ZB330-Y 1ZB330-Z 1ZB390 1ZM27 1ZM30 1ZM47 ÎZMSO ÎZMIOO 1ZM180 1ZM330 1ZM390 2Z12 2Z13 2Z15 2Z16 2Z16A 2Z18 2Z18A 2Z20 2111 2Z2 4 2221

222M 250V

Abstract: 2E102M
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS S n ap -in T e rm in a l T y p e , S m a ll-S ize d Approved by R eliability C en te r fo r Electronic C om ponent, Japan-C ertiflcation No. R CJ-03-25D Sm aller RCJ Approved W ithstanding 3000h o u rs application of ripple current at 8 5 °C .

2z12 diode

Contextual Info: 2Z12~2Z51 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 2Z12~2Z51 Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P=1.5W Peak Reverse Power Dissipation : PRSM=900W at tw=200µs Zener Voltage : VZ=12~51V Plastic Mold Package

2Z12

Abstract: 2Z13 2Z51 2Z15 2Z16 2Z16A 2Z18 2Z18A 2Z27
Contextual Info: 2Z12~2Z51 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 2Z12~2Z51 Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation : P = 1.5W z Peak Reverse Power Dissipation : PRSM = 900W at tw = 200 µs z Zener Voltage : VZ = 12 V ~ 51 V

DO-41S

Abstract: DO-15L 1Z220 U1DL49 CRH01 1FWJ43N CMZ24 U05NH 2z16 CRS01
Contextual Info: [ 4 ] 推奨品種一覧表 [ 4 ] 推奨品種一覧表 <新規設計時の推奨品 新規設計時の推奨品> 新規設計時の推奨品 一般整流ダイオード ピーク繰り返し逆電圧 パッケージ 100 V 0.7 A 平均順電流 1A 400 V 600 V

2Z16

Abstract: 2Z12 2Z13 2Z15 2Z16A 2Z18 2Z18A 2Z51 toshiba 2z16
Contextual Info: 2Z12~2Z51 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 2Z12~2Z51 Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS l Average Power Dissipation : P=1.5W l Peak Reverse Power Dissipation : PRSM=900W at tw=200µs l Zener Voltage : VZ=12~51V l Plastic Mold Package

122Z

Contextual Info: TOSHIBA 2Z 12-2Z51 TENTATIVE TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE CONSTANT VOLTAGE REGULATION. U n it in m m RANSIENT SUPPRESSORS. A v e ra g e P o w er D issip a tio n : P = 1.5W I Peak Reverse Power Dissipation : P r SM = 900W t w = 200,us Z e n e r V o ltag e ; V z = 1 2 ~ 5 1 V

izb390

Abstract: IZ27A 3Z12 ir 1ZM30 1ZB240-Y 1ZB240-Z 1ZB270-X 1ZB270-Y 1ZB240-Y(Q) 1ZB300
Contextual Info: - "J m s ti £ P inf (mA) 12B240 1ZB240-Y 1ZB240-Z 1ZB270 1ZB270— X 1ZB270-Y 1ZB270-Z 1ZB300 1ZB300-X 1ZB30Û-Y 1ZB300-Z 1ZB330 1ZB330-X 1ZB330-Y 1ZB330-Z 1ZB390 1ZM27 1ZM30 1ZM47 ÎZMSO ÎZMIOO 1ZM180 1ZM330 1ZM390 2Z12 2Z13 2Z15 2Z16 2Z16A 2Z18 2Z18A