transistor 2x
Abstract: 55JT 010US d 686
Contextual Info: 2X 0 STYLE 1: PIN 1 = COLLECTOR 2X 2 = BASE (4X ) 3 = EMITTER (2X ) STYLE 2: PIN 1 = COLLECTOR (2X ) 2 = EMITTER (4X ) 3 = BASE (2X ) DIM MILLIMETER A 9.1 4 B 12.70 s 2X K TOL .13 .13 INCHES .360 .500 .03 .05 TOL .005 .005 +.001 -.002 .005 .005 .005 .005
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transistor 2x55jt010usd 686 |
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CM45-12A
Abstract: 8M0B5 MHW252 CM80-28R BGY41B BFR65 2N6166 blw95 BLY94 MHW1342
Contextual Info: RF Transistors for Broadcast Applications SGS-Thomson 55-108MHz Class C for FM Transmitters and Ctass AB for VHF-TV Band I Config. Package Type CE 2X.450SQ4LFL SD1476" CE 2X.450SQ4LFL SD1476 CE .5004LFL SD1457 CE .5004LFL SD1460 2X.450SQ4LFL CE SD1483 * In development, Class AB Icq = 2 X 400 mA
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55-108mhzsd1476450sq4lflsd1457+135004lflsd1460sd1483cm45-12a8m0b5mhw252cm80-28rbgy41bbfr652n6166blw95bly94mhw1342
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optical interrupter
Abstract: QVE00118
Contextual Info: PHOTOTRANSITOR OPTICAL INTERRUPTER SWITCH QVE00118 PACKAGE DIMENSIONS 0.551 14.00 CL 0.236 (6.00) 0.020 (.50) CL 0.197 (5.00) CL OPTICAL 0.100 (2.50) 0.394 (10.00) (2X) 0.295 (7.50) 0.197 (5.00) MIN (4X) 0.027 (.70) (2X) 0.354 (9.00) (2X) NOM 0.260 (6.60)
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MAX1910
Abstract: MAX1910EUB MAX1912 MAX1912EUB MAX5380 MAX5383 high-efficiency LED 250 uA
Contextual Info: 19-2290; Rev 1; 7/02 1.5x/2x High-Efficiency White LED Charge Pumps The MAX1910 has two automatically selected operating modes: 1.5x and 2x. 1.5x mode improves efficiency at higher input voltages, while 2x mode maintains regulation at lower input voltages. The MAX1912 operates
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max1910max191210-pin750khz+8200mv120mamax1910/max1912max1910eubmax1912eubmax5380max5383high-efficiency led 250 ua
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LMBT4401WT1G
Abstract: 1N916 LMBT4401LT1 LMBT4401LT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. LMBT4401WT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401WT1G 2X 3000/Tape & Reel LMBT4401WT3G 2X 10000/Tape & Reel
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lmbt4401wt1g3000/tapelmbt4401wt3g10000/tape+4sc-701n916lmbt4401lt1lmbt4401lt1g
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STA5405
Abstract: sta540 equivalent amplifier for STA540 sta5402 8ohm .5W speaker STA-540 AN1965 diagnostic Thermal Cutoffs JESD97
Contextual Info: STA540 4 x 13 W dual/quad power amplifier Features ! High output power capability – 2x 38 W into 4 Ω at 18 V, 1 kHz, 10%THD – 2x 34 W into 8 Ω at 22 V, 1 kHz, 10%THD – 2x 24 W into 4 Ω at 14.4 V, 1 kHz, 10%THD – 2x 15 W into 8 Ω at 16 V, 1 kHz, 10%THD
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sta540sta5405equivalent amplifier for sta540sta5402+68ohm .5w speakersta-540an1965diagnosticthermal cutoffsjesd97
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LMBT4401LT1G
Abstract: 1N916 LMBT4401LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. LMBT4401LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401LT1G 2X 3000/Tape & Reel LMBT4401LT3G 2X 10000/Tape & Reel
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lmbt4401lt1g3000/tapelmbt4401lt3g10000/tape+3ot-231n916lmbt4401lt1
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Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. LMBT4401WT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401WT1G 2X 3000/Tape & Reel LMBT4401WT3G 2X 10000/Tape & Reel
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Contextual Info: STA540 4 x 13 W dual/quad power amplifier Datasheet − production data Features • High output power capability – 2x 38 W into 4 Ω at 18 V, 1 kHz, 10% THD – 2x 34 W into 8 Ω at 22 V, 1 kHz, 10% THD – 2x 24W into 4Ω at 14.4 V, 1 kHz, 10% THD – 2x 15 W into 8 Ω at 16 V, 1 kHz, 10% THD
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Transistor Equivalent list po55
Abstract: 1F15H transistor P6n motorola top mark smd 7h MAXQ2000 MAXQ622
Contextual Info: Rev 1; 7/10 MAXQ612/MAXQ622 USER’S GUIDE MAXQ612/MAXQ622 REGULATOR VOLTAGE MONITOR GPIO USB SIE* TXCVR 16-BIT MAXQ RISC CPU 6KB ROM SECURE MMU CLOCK 128KB FLASH WATCHDOG 6KB SRAM 2x 16-BIT TIMER 8kHz NANO RING IR DRIVER IR TIMER 2x SPI 2x USART I2C *MAXQ622 ONLY.
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maxq612/maxq62216-bit128kbmaxq622+5transistor equivalent list po551f15htransistor p6n motorolatop mark smd 7hmaxq2000
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LP6872
Abstract: MIL-HDBK-263
Contextual Info: LP6872 0.5W POWER PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND PAD (2X) • DIE SIZE: 14.6X19.7 mils (370x500 µm)
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STA540
Abstract: sound amplifier sta5402 inr 470 STA-540 quadraphonic
Contextual Info: STA540 4 x 13 W dual/quad power amplifier Datasheet − production data Features • High output power capability – 2x 38 W into 4 Ω at 18 V, 1 kHz, 10% THD – 2x 34 W into 8 Ω at 22 V, 1 kHz, 10% THD – 2x 24W into 4Ω at 14.4 V, 1 kHz, 10% THD – 2x 15 W into 8 Ω at 16 V, 1 kHz, 10% THD
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sta540sound amplifiersta5402inr 470+2sta-540quadraphonic
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STA540
Abstract: sta5402
Contextual Info: STA540 4 x 13 W dual/quad power amplifier Datasheet − production data Features • High output power capability – 2x 38 W into 4 Ω at 18 V, 1 kHz, 10% THD – 2x 34 W into 8 Ω at 22 V, 1 kHz, 10% THD – 2x 24W into 4Ω at 14.4 V, 1 kHz, 10% THD – 2x 15 W into 8 Ω at 16 V, 1 kHz, 10% THD
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pseudomorphic
Abstract: 0X13 LP7512 MIL-HDBK-263
Contextual Info: LP7512 ULTRA LOW NOISE PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 0.6 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ Low DC Power Consumption ♦ Excellent Phase Noise GATE BOND PAD (2X) SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm)
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LPS200
Abstract: MIL-HDBK-263 LPS-200
Contextual Info: LPS200 HIGH PERFORMANCE LOW NOISE PHEMT • FEATURES ♦ 1.0 dB Noise Figure at 18 GHz ♦ 10 dB Associated Gain at 18 GHz ♦ Low DC Power Consumption GATE BOND PAD 2X DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE THICKNESS: 3.9 mils (100 µm)
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0X13
Abstract: LP7612 MIL-HDBK-263
Contextual Info: LP7612 HIGH DYNAMIC RANGE PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 1.0 dB Noise Figure at 18 GHz ♦ 55% Power-Added Efficiency GATE BOND PAD (2X) SOURCE BOND PAD (2x)
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SN54H60
Abstract: SN54H50 SN54H53
Contextual Info: CIRCUIT TYPE SN54H60 DUAL 4-INPUT EXPANDER FOR USE WITH SN54H50, SN54H53, SN54H55 CIRCUITS s c h e m a t ic (e a c h e x p a n d e r ) fl At (t o p package v ie w ) d u a l -in -l i n e p a c k a g e /c c 2X 2X 2D GND 2C 28 ÌD IX IX (t o p 2X v ie w 2X
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bond wire gold
Abstract: LPD200 MIL-HDBK-263
Contextual Info: LPD200 HIGH PERFORMANCE PHEMT • FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 12 dB Power Gain at 18 GHz ♦ 1.0 dB Noise Figure at 18 GHz ♦ 55% Power-Added Efficiency DRAIN BOND PAD 2X GATE BOND PAD (2X) SOURCE BOND PAD (2x) DIE SIZE: 12.6X10.2mils (320x260 µm)
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lpd200320x26085x65bond wire gold+1mil-hdbk-263
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FPD2250
Abstract: MIL-HDBK-263 P100
Contextual Info: FPD2250 1.5W POWER PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 32 dBm Linear Output Power at 12 GHz ♦ 7.5 dB Power Gain at 12 GHz ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND PAD (2X) • DIE SIZE (µm): 680 x 470 DIE THICKNESS: 75 µm
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TBA950
Abstract: TBA950-2X TBA 950 2x 2X transistor TBA9502X Phase Control Circuit RC oscillator in inverter circuit diagram filter stage flyback 50hz oscillator inverter Circuit diagram 15625-Hz
Contextual Info: TBA950:2X APLESSEY W Sem iconductors, FOR MAINTENANCE PURPOSES ONLY: DO NOT USE FOR NEW DESIGNS TBA950: 2X LINE OSCILLATOR COMBINATION The T B A 9 5 0 :2 X is a monolithic integrated circuit for pulse separation and line synchronisation in TV receivers with transistor output stages.
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tba950tba950-2xtba 950 2x2x transistor+6tba9502xphase control circuitrc oscillator in inverter circuit diagramfilter stage flyback50hz oscillator inverter circuit diagram15625-hz
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opto transistor moc
Abstract: 356 opto MOC70P3
Contextual Info: Transmissive Opto Sensors Slotted Switch MOC Analog – Standard Resolution 0.510 [12.95] 0.250 [6.35] 0.506 [12.85] 0.153 [3.89] 2X 0.200 [5.08] NOM R0.070 (1.78) (2X) 0.080 [2.03] NOM CL 0.270 [6.86] 0.050 [1.27] SEATING PLANE 0.140 [3.56] 0.105 [2.67]
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moc70p1moc70p2moc70p3opto transistor moc+1356 opto
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slotted optical switch
Abstract: optical interrupter phototransistor 3 pin QVE00034
Contextual Info: PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QVE00034 PACKAGE DIMENSIONS 0.697 17.70 0.236 (6.00) + D E + CL CL 0.020 (0.50) 0.315 (8.00) 0.039 X 45° CHAMFER (2X) CL OPTICAL C.L. 0.059 (1.50) (2X) 0.295 (7.50) 0.394 (10.00) 0.079 (2.00) 0.138 (3.51) 0.030 (0.76)
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qve00034slotted optical switchoptical interrupterphototransistor 3 pin |
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OPTICAL INTERRUPTER
Abstract: QVE00034 INTERRUPTER SWITCH slotted optical switch .300" slot optical interrupter
Contextual Info: PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QVE00034 PACKAGE DIMENSIONS 0.697 17.70 0.236 (6.00) + D E + CL CL 0.020 (0.50) 0.315 (8.00) 0.039 X 45° CHAMFER (2X) CL OPTICAL C.L. 0.059 (1.50) (2X) 0.295 (7.50) 0.394 (10.00) 0.079 (2.00) 0.138 (3.51) 0.030 (0.76)
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qve00034optical interrupterinterrupter switchslotted optical switch+1300" slot optical interrupter
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MO-178-AA
Abstract: 2X transistor transistor 2x Flash 04501 MO-178AA 015-C
Contextual Info: Plastic Packages for Integrated Circuits Package Outline Drawing P5.064A 5 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE Rev 0, 2/10 1.90 0-3° D A 0.08-0.20 5 4 PIN 1 INDEX AREA 2.80 3 1.60 3 0.15 C D 2x 2 5 0.60 0.20 C 2x 0.95 SEE DETAIL X B 0.40 ±0.05
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5m-1994mo-178aamo-178-aa2x transistor+3transistor 2xflash 04501015-c
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