55JT Search Results

c2610 transistor

Abstract: C2610 UTV120 IN4148 inductors 33 micro-henry MJE172 transistor C647 UTV 10
Contextual Info: UTV120 12 Watts, 26.5 Volts, Class A UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE 55JT, STYLE 2 The UTV 120 is a COMMON EMITTER transistor capable of providing 12 Watts Peak, Class A, RF Output Power over the band 470 - 860 MHz. The transistor includes double input prematching for full broadband capability.

capacitor ceramic 33pF

Abstract: 1mF CAPACITOR 10pf ceramic CAPACITOR capacitors ceramic 33pF ceramic capacitor 10pf L9 transistor capacitor 10mf 10MF ELECTROLYTIC 50w rf power transistor
Contextual Info: 0204-125 125 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz CASE OUTLINE GENERAL DESCRIPTION 55JT- Style 2 The 0204-125 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused

Contextual Info: UTV120 12 Watts, 26.5 Volts, Class A UHF Television - Band IV & V CASE OUTLINE 55JT, STYLE 2 GENERAL DESCRIPTION The UTV 120 is a COMMON EMITTER transistor capable of providing 12 Watts Peak, Class A, RF Output Power over the band 470 - 860 MHz. The transistor includes double input prematching for full broadband capability.

10AM12

Abstract: COB1
Contextual Info: 10AM12 12 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

ic 4040

Abstract: IC 7427 134179 IC 8256 10AM12 153637
Contextual Info: 10AM12 12 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

transistor collector emiter base

Contextual Info: 0105-100 100 Watts, 28 Volts, Class AB Defcom 100 - 500 MHz GENERAL DESCRIPTION CASE OUTLINE The 0105-100 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 100-500 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused

VTV1250

Abstract: 250Watts RF transistors C12200
Contextual Info: VTV1250 125 Watts, 28Volts, Class AB VHF Television - Band III GENERAL DESCRIPTION CASE OUTLINE The VTV 1250 is a COMMON EMITTER transistor capable of providing 125 Watts Peak, Class AB, RF Output Power over the band 175 - 225 MHz. The transistor includes double input and output prematching for full broadband

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

0105-50

Contextual Info: 0105-50 50 Watts, 28 Volts, Class AB Defcom 100 - 500 MHz GENERAL DESCRIPTION CASE OUTLINE The 0105-50 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 100-500 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused

Contextual Info: 0104-100 100 Watts, 28 Volts, Class AB Defcom 100 - 400 MHz GENERAL DESCRIPTION CASE OUTLINE The 0104-100 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused

transistor 2x

Abstract: 55JT 010US d 686
Contextual Info: 2X 0 STYLE 1: PIN 1 = COLLECTOR 2X 2 = BASE (4X ) 3 = EMITTER (2X ) STYLE 2: PIN 1 = COLLECTOR (2X ) 2 = EMITTER (4X ) 3 = BASE (2X ) DIM MILLIMETER A 9.1 4 B 12.70 s 2X K TOL .13 .13 INCHES .360 .500 .03 .05 TOL .005 .005 +.001 -.002 .005 .005 .005 .005

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are