2SK3504 Search Results

2SK3504-01

Contextual Info: 2SK3504-01 Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK3504-01 FUJI POWER MOSFET 2SK3504-01 FUJI POWER MOSFET Super FAP-G Series Zth ch-c [K/W] 10 10 Outline Drawings Transient Thermal impedance Zth(ch-c)=f(t) parameter:D=t/T 1 N-CHANNEL SILICON POWER MOSFET TO-220AB Features High speed switching Low on-resistance

MOSFET KV

Abstract: 2SK3504-01 2SK3504
Contextual Info: 2SK3504-01 Super FAP-G Series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK3504-01 Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

1N1012

Abstract: mosfet specification
Contextual Info: DATE CHECKED Mar.-10-'01 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

2SK3504-01

Abstract: MS5F4924 MS5F4926
Contextual Info: DATE CHECKED Mar.-10-'01 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

F5022

Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01

2SK3679

Abstract: 2sk3598 2SK3599-01MR 2SK3677-01MR 2sk3680-01 2sk3580-01mr 2sk3603 2SK3532 2SK3469-01MR 2SK3532-01MR
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse RDS (on) PD ＊2 Max. ＊1

2SK3525

Abstract: 2sk3550 2SK3549 2sk3523 2sk3528 2sk3530 TO53 2sk3451 2SK3531 2SK3549-01
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01

2sk3528

Abstract: 2SK3451 2SK3451-01MR 2SK3523-01R 2SK3555-01MR 2SK3528-01R 2SK3549 2SK3555 2SK3502-01MR 2SK3531-01
Contextual Info: POWER MOS FET Quick Selection Guide Super FAP-G series Low-on resistance and low gate charge ID Drain-source voltage VDSS Voltage Amps. 150 250 450 Package 500 600 800 4.6 900 2SK3531-01(2.5) TO-220AB 2SK3532-01MR(2.5) TO-220F 5 2SK3517-01(1.5) 2SK3529-01(1.9)

2SK3504-01

Abstract: MS5F4924 MS5F4926 fire alarm using 555
Contextual Info: DATE CHECKED Mar.-10-'01 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without