2SK323 Search Results

2SK3235

Abstract: Hitachi DSA0076
Contextual Info: 2SK3235 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1371 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.3 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A)

Contextual Info: 2SK3233 Spice parameter .SUBCKT 2sk3233 1 2 3 * Model generated on Jul 20, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:

2SK3235

Abstract: 10External
Contextual Info: 2SK3235 Spice parameter .SUBCKT 2sk3235 1 2 3 * Model generated on Jul 21, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:

K3236

Abstract: 2SK3236
Contextual Info: 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.)

2SK323

Abstract: DCIM
Contextual Info: HITACHI 2SK323 SILICON N-CHANNEL JUNCTION FET LOW FREQUENCY AM PURER - T s : ir -• ■ ■ î-i-f'- 'i* trV 0 ■Î • wr L_. - S- S >* * <»s:r *1 - vü . .-*-■ ' .<*. n ," ï: - - []/ MPAK ■ ABSOLUTE MAXIMUM RATINGS {T*=2S‘C) Symbol I«cm ti;»c lo MHirtc v«ll«|;c

2SK3237LS

Abstract: 2SK3237
Contextual Info: 2SK3237LS N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications ・Low ON-state resistance. ・Low Qg Absolute Maximum Ratings／Ta=25℃ Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current（DC）

2SK3233

Abstract: PRSS0003AE-A
Contextual Info: 2SK3233 Silicon N Channel MOS FET High Speed Power Switching REJ03G1096-0200 Previous: ADE-208-1369 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: RDS (on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)

2SK3233

Abstract: PRSS0003AE-A 2SK3233-E
Contextual Info: 2SK3233 Silicon N Channel MOS FET High Speed Power Switching REJ03G1096-0200 Previous: ADE-208-1369 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: RDS (on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)

d1889

Abstract: 2SK3230C SC-89 marking EE
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230C contains a diode and high resistivity 3 0.8 ±0.1 phones. 1.6 ±0.1 for compact ECMs for audio or mobile devices such as cell-

TC5080

Abstract: K3236
Contextual Info: 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.)

2SK3230B

Abstract: SC-89
Contextual Info: データ・シート 接合形電界効果トランジスタ Junction Field Effect Transistor 2SK3230B N チャネル接合形シリコン電界効果トランジスタ ECM インピーダンス変換用 外形図（単位：mm） 2SK3230B は，ゲート - ソース間にダイオードと高抵抗を内

2SK3230B

Abstract: SC-89
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230B is suitable for converter of ECM. +0.1 0.3 ±0.05 0.1–0.05 0.4 General-purpose product.

Hitachi DSA0076

Abstract: 2SK3234
Contextual Info: 2SK3234 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1370 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.65 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A)

2SK186

Abstract: 2SK323
Contextual Info: HITACHI 2SK323 SILICON N-CHANNEL JUNCTION FET LOW FREQ U EN C Y AM PLIFIER í 4 -’ A.à I/-* I |£1 T ï '¿i 3 i* 1 0-0 • 1ÎÏÏ_ LU—1 1: _ î . '» lo .» i 53 i* 28"?; ». !>!■* ì S*iA{ ) iiw (l)iir<iiuiHii «Htrm ) d E I {MP AK) ■ ABSO LU T E MAXIMUM RATINGS (Ta=2$°C)

2SK3234

Contextual Info: 2SK3234 Silicon N Channel MOS FET High Speed Power Switching REJ03G1097-0200 Previous: ADE-208-1370 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: RDS (on) = 0.65 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A)

D1594

Abstract: 2SK3230 SC-89
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230 is suitable for converter of ECM. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES

2SK3233

Abstract: Hitachi DSA0076
Contextual Info: 2SK3233 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1369 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)

K3236

Contextual Info: 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.)

2SK3236

Abstract: K3236
Contextual Info: 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 42 S (typ.)

2SK3234

Abstract: PRSS0003AE-A
Contextual Info: 2SK3234 Silicon N Channel MOS FET High Speed Power Switching REJ03G1097-0200 Previous: ADE-208-1370 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: RDS (on) = 0.65 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A)

k3236

Abstract: 2SK3236 M1-M10
Contextual Info: 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm 4 V gate drive · Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.) ·

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
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