2SK160 Search Results

Contextual Info: 2SK1609 Switching Diodes MA1U152WK Silicon epitaxial planer type Unit : mm For switching circuits • Features 2.8±0.2 +0.25 0.65±0.15 0.65±0.15 ● Small capacity between pins, Ct ● Cathode common connection type +0.1 2 +0.1 Short reverse recovery period trr

MA776

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA776 Silicon epitaxial planer type Unit : mm For the switching circuit ø0.45 max. Low forward rise voltage VF and satisfactory wave detection effi- 1st Band 2nd Band ciency Temperature coefficient of forward characteristic is small.

Contextual Info: TOSHIBA 2SK1600 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 600 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • U n it in mm Low Drain-Source ON Resistance : Rd S(ON) =4.30 (Typ.)

Contextual Info: 2SK1607 Switching Diodes MA1U152A Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 0.65±0.15 Short reverse recovery period trr ● Small capacity between pins, Ct +0.1 2 0.7–0 +0.1 ● 3 0.4–0.05 in the high-speed mounting machine

Contextual Info: 2SK1605 Power F-MOS FETs 2SK1605 Silicon N-Channel Power F-MOS Unit : mm avalanche energy capability ● High-speed 4.2±0.2 7.5±0.2 RDS on , high-speed switching characteristic • Applications ø3.1±0.1 switching (switching mode regulator) high-frequency power amplification

Contextual Info: 2SK1609 Switching Diodes MA1U152WK Silicon epitaxial planer type Unit : mm For switching circuits • Features 2.8±0.2 +0.25 0.65±0.15 0.65±0.15 0.95 3 +0.1 in the high-speed mounting machine 1 0.4–0.05 Flat lead type, with improved mounting efficiency and solderability

Contextual Info: 2SK1607 Switching Diodes MA204WK, MA205WK Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 ● Small capacity between pins, Ct ● Supply 0.65 max. 14.5±0.5 reverse recovery period trr 0.85 ● Short 1.0 0.8 • Features

2SK1608

Contextual Info: 2SK1608 Power F-MOS FETs 2SK1608 Silicon N-Channel Power F-MOS Unit : mm • Applications ● High-speed ø3.1±0.1 switching switching mode regulator high-frequency power amplification 14.0±0.5 ● For 2.7±0.2 4.2±0.2 RDS(on), high-speed switching characteristic

2SK1606

Contextual Info: Power F-MOS FETs 2SK1606 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 5.5±0.2 2.7±0.2 4.2±0.2 0.7±0.1 ● High-speed switching (switching power supply)

Contextual Info: 2SK1607 Switching Diodes MA204WK, MA205WK Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 ● Small capacity between pins, Ct in radial taping manner possible M Di ain sc te on na tin nc ue e/ d ● Supply 0.65 max.

MA1U152WA

Abstract: MA1U152 2SK1609
Contextual Info: 2SK1609 Switching Diodes MA1U152WA Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 1.5–0.05 VRM Peak reverse voltage Single Forward current DC IF Double Single Peak forward current Single Non-repetitive peak forward surge current

2SK1609

Abstract: 2sk16
Contextual Info: Power F-MOS FETs 2SK1609 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic ■ Applications VDSS 500 V Gate to Source voltage VGSS ±30 V DC ID ±8

2SK1608

Abstract: 2sk16 2SK160
Contextual Info: Power F-MOS FETs 2SK1608 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic ■ Applications VDSS 500 V Gate to Source voltage VGSS ±30 V DC ID ±5

MA1U152WK

Abstract: 2SK1609 MA1U152 2sk16 M/MA1U152WK
Contextual Info: 2SK1609 Switching Diodes MA1U152WK Silicon epitaxial planer type Unit : mm For switching circuits • Features 2.8±0.2 +0.25 0.65±0.15 1.5–0.05 0.95 1.9±0.1 3 0.4–0.05 +0.1 in the high-speed mounting machine ue pl d in an c se ed lud pl vi an m m es

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA785 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification Anode ● S-Mini type 2-pin package, enabling high-density mounting ● IF(AV)=100mA rectification possible

DIODE M4A

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA791 Silicon epitaxial planer type Unit : mm +0.2 For super high-speed switching circuit For small current rectification 2.8 –0.3 +0.25 1.5 –0.05 ● IF(AV)=100mA rectification possible ● Fast reverse recovery time trr, optimum for high-frequency rectifica-

M2U Package

Contextual Info: 2SK1605 Switching Diodes MA127 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 ● High voltage resistance VR : 80V 3 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C Parameter Symbol Rating

DIODE M4A

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA793 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification 2.1±0.1 ● S-Mini type 3-pin package with two elements (series connection) of MA792 incorporated 0.425

MA789

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA789 Silicon epitaxial planer type Unit : mm +0.2 For super high-speed switching circuit For small current rectification 2.8 –0.3 +0.25 1.5 –0.05 ● Reverse voltage VR (DC value)= 60V guaranteed 1.45 0.95 3 +0.1

2SK1602

Contextual Info: 2SK1602 2SK1602 o X -í 7 Í > 'T'ffl M 'Æ , ^ > Ì£ ÌJ t^ fiv > 0 : R d S(O N )=4.3 îî F5 : iYfsl = 1 . 7 S ( í ^ ) . M fifö fö iS r . ü tiÄ ^ 'fiU 'o : ID s s = 1 0 0 M ( S ^ ) (Vd S = 640V) • X . 'y > W 7 , > I > V ? 4 - ? - Ç - ï 0 : Vth = 1.5~3.5v(VDS = 10V, lD = lm A )

schottky diode marking A7

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planer type Unit : mm For UHF mixer 1.60±0.05 • Features (0.2) Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer ● SS-Mini package, enabling down-sizing of the equipment and auto-

Contextual Info: 2SK1609 Switching Diodes MA152WK Silicon epitaxial planer type Unit : mm For switching circuits 2.8±0.2 • Features 2 Anode common connection type Parameter Forward current DC Peak forward current Non-repetitive peak forward surge current VR VRM Single

MA151K

Abstract: MA999 SCHOTKY 2SK1605 MA704A
Contextual Info: 2SK1605 Composite Diodes MA999 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features 0.5R Symbol Rating Unit Reverse voltage DC VR 30 Peak reverse voltage

2SK1606

Abstract: MA205WA MA204WA
Contextual Info: 2SK1606 Switching Diodes MA204WA, MA205WA Silicon epitaxial planer type Unit : mm 6.9±0.1 0.15 0.7 1.05 2.5±0.1 ±0.05 1.45 0.8 4.0 ● Short 0.8 • Features capacity between pins, Ct 14.5±0.5 0.85 ● Supply 0.65 max. in radial taping manner possible