2SK1544 Search Results

M2SK1544

Contextual Info: TOSHIBA 2SK1544 TOSHIBA FIELD EFFECT TRANSISTOR M T SILICON N CHANNEL MOS TYPE tt-MOSIII-5 • m. ■ v ■ ■ INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • U nit in mm

2SK1544

Contextual Info: 2SK1544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII.5 2SK1544 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.15 Ω (typ.) z High forward transfer admittance : |Yfs| = 21 S (typ.)

2SK1544

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1544 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type π-MOS III.5 High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance

Contextual Info: SILICON N CH AN N EL M O S T Y P E tt-M O S III.5 2SK1544 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS. DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS. 2 0.5 MAX. . 0 3 . 3 * 0 . 2 • Low Drain-Source ON Resistance : Rd S(ON) =0.150 (Typ.)

2SK1544

Abstract: 1021S
Contextual Info: 2SK1544 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅢ.5 2SK1544 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.15Ω (標準) z オン抵抗が低い。

2SK1544

Contextual Info: TO SHIBA 2SK1544 Field Effect Transistor Silicon N Channel MOS Type ti-MOS 111.5 High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance “ R dS(ON) = 0.15i2 (Typ.) • High Forward Transfer Admittance

Contextual Info: 2SK1544 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK1544 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.15 Ω (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.)

induction cooker fault finding diagrams

Abstract: MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200
Contextual Info: [5] Handling Precautions 1 Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when

2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Contextual Info: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3

TF843

Abstract: 2SK1574 2sk to-92 S K 1 0 4 5 Y K/I-TD238-4
Contextual Info: TOSIBA 7T-MOS FET PRODUCT MATRIX 12 [ 400 ▼2SK 945 5.0 ♦ 2 S K 5 2 8 Î2 .2 ) 450 * 500 600 900 850 ( ) : RDS (ON) MAX. ] AND S-NO : UNDER DEVELOPM ENT 10 0 0 •2SK 537I9.0) ♦ 2 S K 5 2 9 Î2 .6 : ■ Y T F 8 2 3 (4 .0 ) ■Y T F821(3.0) ■Y T F822(4.0)

K2057

Abstract: 2SK2236 k20s 2SK2146 2sk1855 2SK2057 2SK2150 k205 2SK185 2SK1854
Contextual Info: POWER MOS FET 3.7T-MOSIII*5 V dss= 250~600V type High withstanding series, well suited for applications with Ballast and A C=100V IN switching power supplies. • G uaran teed V gss = ± 30V for all types ■ Im proved high w ithstanding c a rac te ristic s by optimizing the cell configuration

TPCA8077

Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
Contextual Info: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

st-100sx

Abstract: Arakawa ST-100SX jis C5003 mosfet induction heater MIL-STD-750b 750H C5003 C5700 ST-100S YG6260
Contextual Info: [ 4 ] Handling Guide for Semiconductor Devices [ 4 ] Handling Guide for Semiconductor Devices [ 4 ] Handling Guide for Semiconductor Devices 1. Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless,

buz90af

Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Contextual Info: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205

2sK2750 equivalent

Abstract: 4614 mosfet 2SK3567 equivalent 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent toshiba f5d 2SK2545 equivalent 2SK3566 equivalent 2sk3625
Contextual Info: SELECTION GUIDE Power MOSFET www.toshiba-components.com X3 POWERMOSFET07 PowerMosfet-Brosch.indd 1 03.05.2007 13:53:26 Uhr 2 V S-6 Part Number (TSOP6) Maximum Ratings Circuit VDSS(V) ID(A) Configuration 10V RDS (ON) max (m ⍀) 4.5V 2.5V 2.0V 1.8V Qg typ. Ciss typ.

K1118

Abstract: k1118 transistor MOSFET transistor k1118 transistor k1118 2SK1603 2SK1723 transistor 2SK1603 2SK1118 MOSFET 2SK1358 Transistor Guide transistor SMD 2S
Contextual Info: High Voltage MOSFETs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all possible designs.

2sk1603

Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378

2SJ239

Abstract: 2SK2030 2SJ201Y 2sk1 2SK2057 2SK2200TP 2sk1544 2SJ201-Y 2SK1079 2SJ238
Contextual Info: MOSFET Characteristic Chart M axim u m R ating Id |Am ps| V oss [Volts] R d s ON Pd [W atts] TYP. [Ohm s| M AX. lO hm sI V qs [Volts] Id [Amps] Vtn (Volts] | ID - 1 mA] A p plicatio n DC/DC converter 2SJ147 T0-220(IS) -12 -60 40 0.17 0.2 -10 -6 -1.5 ~ -3.5

2SK1411

Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Contextual Info: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0

2SK1603

Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
Contextual Info: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and

*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ