2SK1530 TOSHIBA Search Results

2SK1530 TOSHIBA Result Highlights (5)

Part	Manufacturer	Description	Download
TB6586BFG	Toshiba Electronic Devices & Storage Corporation	Brushless Motor Driver/3 Phases Controller/Vout(V)=18/Square Wave	Datasheet
TC78B006AFNG	Toshiba Electronic Devices & Storage Corporation	Brushless Motor Driver/1 Phase Pre Driver/Vout(V)=40/Square, Sine Wave	Datasheet
TB62216FTG	Toshiba Electronic Devices & Storage Corporation	Brushed Motor Driver/2ch/Vout(V)=40/Iout(A)=2.5	Datasheet
TB6613FTG	Toshiba Electronic Devices & Storage Corporation	Brushed Motor Driver/8ch/Vout(V)=6/Iout(A)=0.8	Datasheet
TB67H303HG	Toshiba Electronic Devices & Storage Corporation	Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=10	Datasheet

2SK1530 TOSHIBA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Toshiba 2SJ Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : \|Yfs\| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Tc = 25°C)	Original	2SK1530 2SJ201 2-21F1B Toshiba 2SJ	PDF
2sk1530 Abstract: 2SJ201 Toshiba 2SJ Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 200V High forward transfer admittance : \|Yfs\| = 5.0 S typ. Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)	Original	2SK1530 2SJ201 2-21F1B 2sk1530 2SJ201 Toshiba 2SJ	PDF
2SJ20 Abstract: 2SK1530 2SJ201 Toshiba 2SJ Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 200V High forward transfer admittance : \|Yfs\| = 5.0 S typ. Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)	Original	2SK1530 2SJ201 2-21F1B 2SJ20 2SK1530 2SJ201 Toshiba 2SJ	PDF
Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = 200V High forward transfer admittance : \|Yfs\| = 5.0 S typ. Complementary to 2SJ201 Maximum Ratings (Tc = 25°C)	Original	2SK1530 2SJ201 2-21F1B	PDF
2SK1530 Abstract: 2SJ201 Toshiba 2SJ Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier Application Unit: mm l High breakdown voltage : VDSS = 200V l High forward transfer admittance : \|Yfs\| = 5.0 S typ. l Complementary to 2SJ201 Maximum Ratings (Ta = 25°C)	Original	2SK1530 2SJ201 2-21F1B 2SK1530 2SJ201 Toshiba 2SJ	PDF
2SJ201 Abstract: 2SK1530 toshiba pb includes Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1530 2SJ201 2SJ201 2SK1530 toshiba pb includes	PDF
toshiba marking code transistor Abstract: 2SK1530 2SJ201 Toshiba 2SJ toshiba marking abbreviation transistor Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 200V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1530 2SJ201 toshiba marking code transistor 2SK1530 2SJ201 Toshiba 2SJ toshiba marking abbreviation transistor	PDF
Toshiba 2SJ Abstract: toshiba marking code transistor 2SK1530 toshiba Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 200V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1530 2SJ201 Toshiba 2SJ toshiba marking code transistor 2SK1530 toshiba	PDF
2SK1530 Abstract: 2SJ201 toshiba pb includes Contextual Info: 2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 Unit: mm High-Power Amplifier Application z High breakdown voltage : VDSS = 200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SJ201 Absolute Maximum Ratings (Ta = 25°C)	Original	2SK1530 2SJ201 2SK1530 2SJ201 toshiba pb includes	PDF
2Sj201 Abstract: 2SK1530 Contextual Info: 2SJ201 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ201 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V j gg= —200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ.) Complementary to 2SK1530	OCR Scan	2SJ201 -200V 2SK1530 2Sj201	PDF
Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : \|Yfs\| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Tc = 25°C)	Original	2SJ201 2SK1530 2-21F1B	PDF
2SK1530 Abstract: 2SJ201 Contextual Info: 2SK1530 東芝電界効果トランジスタシリコンNチャネルMOS形 2SK1530 ○ 低周波電力増幅用単位: mm z 高耐圧です。 : VDSS = 200 V z 高順方向伝達アドミタンスです。 : \|Yfs\| = 5.0 S 標準 z 2SJ201 とコンプリメンタリになります。	Original	2SK1530 2SJ201 2-21F1B 2002/95/EC) 2SK1530 2SJ201	PDF
Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : \|Yfs\| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)	Original	2SJ201 2SK1530 2-21F1B	PDF
Contextual Info: TOSHIBA 2SK1530 Field Effect Transistor Silicon N Channel MOS Type n-MOS II High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 200V (Min.) • High Forward Transfer Admittance - 'Yfs' = 5.OS (Typ.) • Complementary to 2SJ201 • Enhancement-Mode	OCR Scan	2SK1530 2SJ201	PDF

transistor 1211 Contextual Info: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ201 HIGH POWER AMPLIFIER APPLICATION Unit in mm • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs \| = 5.0S Typ. • Complementary to 2SK1530 20.5MAX. : V j ) g g = —200V	OCR Scan	2SJ201 --200V 2SK1530 2-21F1 transistor 1211	PDF
Contextual Info: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR HIGH POWER AMPLIFIER APPLICATION SILICON P CHANNEL MOS TYPE 2SJ201 U nit in mm • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs \| = 5.0S Typ. • Complementary to 2SK1530 20.5MAX. : V ]}g g = —200V	OCR Scan	2SJ201 --200V 2SK1530 2-21F1B	PDF
2Sj201 Abstract: 2SK1530 Toshiba 2SJ 2SJ201 toshiba Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = −200 V High forward transfer admittance : \|Yfs\| = 5.0 S typ. Complementary to 2SK1530 Maximum Ratings (Ta = 25°C)	Original	2SJ201 2SK1530 2Sj201 2SK1530 Toshiba 2SJ 2SJ201 toshiba	PDF
Contextual Info: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ201 HIGH POWER AMPLIFIER APPLICATION Unit in mm • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs \| = 5.0S Typ. • Complementary to 2SK1530 20.5MAX. : V j ) g g = —200V	OCR Scan	2SJ201 2SK1530 100ms;	PDF
toshiba pb includes Abstract: 2SJ201 2SK1530 Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ201 2SK1530 2-21F1B toshiba pb includes 2SJ201 2SK1530	PDF
Contextual Info: TOSHIBA 2SJ201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2 S J 2 Q1 Unit in mm HIGH POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : V q ss = —200V High Forward Transfer Admittance : \|Yfg\| = 5.0S Typ. Complementary to 2SK1530	OCR Scan	2SJ201 20-5MAX. --200V 2SK1530	PDF
toshiba marking code transistor Abstract: 2sj201 Toshiba 2SJ Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ201 2SK1530 2-21F1B toshiba marking code transistor 2sj201 Toshiba 2SJ	PDF
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N CHANNEL MOS TYPE HIGH POWER AM PL IF IE R AP PL IC AT IO N Unit in mm . High Breakdown Voltage 20.5MAX : Vd ss 200V MIN. ff 3.3 ±0.2 . High Forward Transfer Admittance : \|Yfs \| 5.0S(TYP.) . Complementary to 2SJ201	OCR Scan	2SK1530 2SJ201 Tc-25	PDF
2SJ201 Abstract: 2SK1530 toshiba pb includes Contextual Info: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ201 2SK1530 2-21F1B 2SJ201 2SK1530 toshiba pb includes	PDF
2SK1530 Abstract: 2SJ201 Contextual Info: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : Vj gg = 200V High Forward Transfer Admittance : \|Yfs\| = 5.0S Typ.) Complementary to 2SJ201	OCR Scan	2SK1530 2SJ201 2SK1530	PDF

2SK1530 TOSHIBA Search Results

2SK1530 TOSHIBA Result Highlights (5)

2SK1530 TOSHIBA Datasheets Context Search

Toshiba 2SJ

2sk1530

2SJ20

2SK1530

2SJ201

toshiba marking code transistor

Toshiba 2SJ

2SK1530

2Sj201

2SK1530

transistor 1211

2Sj201

toshiba pb includes

toshiba marking code transistor

2SJ201

2SK1530