2SK0 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0664G Silicon N-channel MOSFET For switching circuits • Package • High-speed switching • S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing

2SK0198

Abstract: 2SK198
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET For low-frequency amplification • Package • High mutual conductance gm • Low-noise characteristics • Mini type package, allowing downsizing of the sets and automatic

2SK0662

Abstract: 2SK662
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency and low-noise amplification • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: Silicon MOS FETs Small Signal 2SK0620 (2SK620) Silicon N-Channel MOS FET unit: mm For switching 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 2 1 (0.95) (0.95) 1.9±0.1 (0.65) ● High-speed switching ● Mini-type package, allowing downsizing of the sets and automatic

Contextual Info: Silicon Junction FETs Small Signal 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm M Di ain sc te on na tin nc ue e/ d 5.0±0.2 4.0±0.2 5.1±0.2 • Features ■ Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.75 max. • High-speed switching • Allowing to supply with the radial taping 15.6±0.5 • Features (0.8) (0.8) 3.0±0.2

2SK0601

Abstract: 2SK601
Contextual Info: Silicon MOSFETs Small Signal 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.04 Symbol Rating Unit Drain-source voltage VDS 80 V Gate-source voltage (Drain open)

Contextual Info: Silicon Junction FETs Small Signal 2SK0663G Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Drain-sourse voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0665 (2SK665) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching

SJF00005BED

Contextual Info: Silicon Junction FETs Small Signal 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.65) 2 1 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency amplification For switching circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1

Contextual Info: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Low ON resistance • High-speed switching • Allowing to be driven directly CMOS, TTL

Contextual Info: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 2.8+0.2 –0.3 3 ● High mutual conductance gm ● Low noise type

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET Unit: mm For low-frequency amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VDS 30 V VDGO 30

Contextual Info: Silicon Junction FETs Small Signal 2SK0663G Silicon N-channel junction FET For low-frequency amplification For switching circuits • Package ■ Features • Low noise figure NF • High gate-drain voltage (source open) VGDO • SMini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing

2SK0662

Abstract: 2SK662
Contextual Info: Silicon Junction FETs Small Signal 2SK0662 (2SK662) Silicon N-Channel Junction FET For low-frequency amplification unit: mm 2.1±0.1 • Features 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 1 0.65 2.0±0.2 +0.1 0.425 ● High mutual conductance gm ● Low noise type

2SK620

Abstract: 2SK0620
Contextual Info: Silicon MOS FETs Small Signal 2SK0620 (2SK620) Silicon N-Channel MOS FET unit: mm +0.2 2.8 –0.3 For switching +0.25 1.5 –0.05 1.45 1 3 +0.1 0.4 –0.05 1.9±0.2 +0.2 2.9 –0.05 ● High-speed switching ● Mini-type package, allowing downsizing of the sets and automatic

2SK0198

Abstract: 2SK198
Contextual Info: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification unit: mm +0.2 2.8 –0.3 • Features +0.25 0.65±0.15 1.45 0.95 1 3 +0.1 0.4 –0.05 1.9±0.2 1.5 –0.05 0.95 +0.2 ● High mutual conductance gm

2SK0662

Abstract: 2SK662
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency and low-noise amplification • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

2SK0663

Abstract: 2SK663
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Features ue pl d in

2SK0664

Abstract: 2SK664
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0664 (2SK664) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 2 0.2±0.1 1

2SK0665

Abstract: 2SK665
Contextual Info: Silicon MOS FETs Small Signal 2SK0665 (2SK665) Silicon N-Channel MOS FET (0.425) unit: mm 0.3+0.1 –0.0 For switching 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 ● High-speed switching ● Small drive current owing to high input inpedance ● High electrostatic breakdown voltage

2SK0665

Abstract: 2SK665
Contextual Info: Silicon MOSFETs Small Signal 2SK0665 (2SK665) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Small drive current owing to high input inpedance

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0664 (2SK664) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ 2 0.2±0.1 1 2.1±0.1 M Di ain sc te on na