2SJ5 Search Results

Contextual Info: TOSHIBA 2SJ567 TOSHIBA Field Effect Transistor TEN TA TIVE] Silicon P Channel MOS Type ji-M OSV 2SJ567 Switching Applications Chopper Regulator, D C -D C Converter and Motor Drive Applications Features • Low drain-source ON resistance: R d S (ON) = 1.6 £2 (typ.)

Contextual Info: T O SH IB A TENTATIVE 2SJ509 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOS V 2SJ509 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • INDUSTRIAL APPLICATIONS

Contextual Info: T O SH IB A 2SJ511 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-M O SV 2SJ511 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : RDS (ON)= 0.32Q (Typ.)

2SJ539

Abstract: DSA003643 Hitachi 2SJ
Contextual Info: 2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.16 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO–220AB D G 1 2

2SJ587

Abstract: DSA003749 Hitachi 2SJ
Contextual Info: 2SJ587 Silicon P Channel MOS FET High Speed Switching ADE-208-801 Z 1st.Edition. June 1999 Features • Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA) • 2.5 V gate drive device. • Small package (SMPAK)

2SJ537

Abstract: Toshiba 2SJ
Contextual Info: 2SJ537 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.)

2SJ544

Abstract: DSA003643
Contextual Info: 2SJ544 Silicon P Channel MOS FET High Speed Power Switching ADE-208-648A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1

2SJ567

Contextual Info: 2SJ567 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ567 Industrial Applications Switching Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)

2SJ575

Abstract: Hitachi 2SJ DSA003643
Contextual Info: 2SJ575 Silicon P Channel MOS FET High Speed Switching ADE-208-740B Z 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (MPAK)

2SJ545

Abstract: DSA003643 Hitachi 2SJ
Contextual Info: 2SJ545 Silicon P Channel MOS FET High Speed Power Switching ADE-208-643A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO–220CFM D G 1 2

2SJ555

Abstract: Hitachi 2SJ DSA003643
Contextual Info: 2SJ555 Silicon P Channel MOS FET High Speed Power Switching ADE-208-634A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–3P D G 1 S

2SJ532

Abstract: DSA003774
Contextual Info: 2SJ532 Silicon P Channel MOS FET High Speed Power Switching ADE-208-653B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220CFM D G 1 2

Contextual Info: TOSHIBA 2SJ516 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M OSV 2SJ516 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance

2SJ507

Abstract: Toshiba 2SJ Transistor
Contextual Info: TO SHIBA 2SJ507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt- M O S V 2SJ 507 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 5.1 M AX.

2SJ557

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 3 1.5 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)

TA-2922

Abstract: Ta2922
Contextual Info: Ordering number:ENN5948A P-Channel Silicon MOSFET 2SJ501 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A [2SJ501] 0.5 0.4 3 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate

2SJ560

Contextual Info: Ordering number:ENN6120A P-Channel Silicon MOSFET 2SJ560 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2157 [2SJ560] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 4.25max 1.5 1

Contextual Info: Ordering number:ENN6410 P-Channel Silicon MOSFET 2SJ584LS Ultrahigh-Speed Switching Applications Features • Low ON-resistance. •Ultrahigh-speed switching. • Micaless package facilitating mounting. Package Dimensions unit:mm 2078B Specifications Absolute Maximum Ratings

Contextual Info: T O SH IB A 2SJ512 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2SJ 512 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: T O SH IB A 2SJ507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-7r-M O SV 2 SJ 50 7 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source On Resistance

Contextual Info: T O SH IB A TENTATIVE 2SJ509 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOS V i <; i r n q HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS 4V Gate Drive

Hitachi 2SJ

Abstract: Hitachi DSA00279
Contextual Info: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline

Hitachi 2SJ

Abstract: Hitachi DSA002757
Contextual Info: 2SJ528 L , 2SJ528(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-641A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching Outline 2SJ528(L),2SJ528(S) Absolute Maximum Ratings (Ta = 25°C)

Hitachi 2SJ

Abstract: Hitachi DSA002757
Contextual Info: 2SJ548 Silicon P Channel MOS FET High Speed Power Switching ADE-208-639A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ548 Absolute Maximum Ratings (Ta = 25°C)