2SJ305 Search Results

2SJ305A

Abstract: 2sj305 2SK2009
Contextual Info: 2SJ305 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ305 ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 入力インピーダンスが高く, 駆動電流が小さい。 • Vth が低く, 低電圧での CMOS などからの直接駆動が可能。

Contextual Info: TO SHIBA 2SJ305 TOSHIBA FIELD EFFECT TRANSISTOR 7 S I SILICON P CHANNEL MOS TYPE 3 n R HIGH SPEED SWITCHING APPLICATIONS U n it in mm ANALOG APPLICATIONS + 0.5 2.5-0.3 h • H igh Inp u t Im pedance • Low G ate Threshold Voltage. V th = - 0 .5 - -1 .5 V

2sj305

Abstract: 2SK2009
Contextual Info: TO SH IBA 2SJ305 T O SH IB A FIELD EFFECT TR A N SIST O R SILICON P C H A N N E L M O S TYPE 2SJ305 Unit in mm HIGH SPEED SW IT C H IN G A PP LIC A T IO N S A N A L O G A PP LIC A TIO N S • • • High Input Impedance Low Gate Threshold Voltage. Excellent Switching Times.

Contextual Info: 2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Analog Applications • High input impedance • Low gate threshold voltage.: Vth = −0.5~−1.5 V • Excellent switching times.: ton = 0.06 s typ.

2sj305

Abstract: 2SK2009
Contextual Info: 2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Analog Applications • High input impedance · Low gate threshold voltage.: Vth = −0.5~−1.5 V · Excellent switching times.: ton = 0.06 µs typ.

Contextual Info: TO SHIBA 2SJ305 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE i <; i 3 n r HIGH SPEED SWITCHING APPLICATIONS U nit in mm ANALOG APPLICATIONS • High Input Impedance • Low Gate Threshold Voltage. • Excellent Switching Times. • Low Drain-Source ON Resistance.

Contextual Info: SILICON P CHANNEL MOS TYPE 2SJ305 HIGH SPEED SWITCHING APPLICATIONS. ANALOG APPLICATIONS. • • • High Input Impedance Low Gate Threshold Voltage. Excellent Switching Times. • • • Low Drain-Source ON Resistance. Small Package. Complementary to 2SK2009.

2SJ305

Abstract: 2SK2009
Contextual Info: 2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Analog Applications • High input impedance • Low gate threshold voltage.: Vth = −0.5~−1.5 V • Excellent switching times.: ton = 0.06 s typ.

2sj305

Abstract: 2SK2009
Contextual Info: TOSHIBA 2SJ305 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ305 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG APPLICATIONS • • • High Input Impedance Low Gate Threshold Voltage. Excellent Switching Times. • • • Low Drain-Source ON Resistance.

Contextual Info: Reliability Tests Report Product Name: 2SJ305 Package Name: S-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

2SJ305

Abstract: 2SK2009 Toshiba 2SJ
Contextual Info: 2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Analog Applications • High input impedance • Low gate threshold voltage.: Vth = −0.5~−1.5 V • Excellent switching times.: ton = 0.06 µs typ.

Contextual Info: 2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Analog Applications • High input impedance • Low gate threshold voltage.: Vth = −0.5 to −1.5 V • Excellent switching times.: ton = 0.06 s typ.

Toshiba 2SJ

Contextual Info: 2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Analog Applications • High input impedance • Low gate threshold voltage.: Vth = −0.5~−1.5 V • Excellent switching times.: ton = 0.06 s typ.

2SJ305

Abstract: 2SK2009 TO-236MOD
Contextual Info: 2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Analog Applications • High input impedance • Low gate threshold voltage.: Vth = −0.5~−1.5 V • Excellent switching times.: ton = 0.06 s typ.

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3K7002

Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
Contextual Info: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4