transistor 5bw
Abstract: TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave
Contextual Info: 9. Summarized Characteristics Table 4. Bipolar Transistor« Bipolar Transistors, Field Effect Transistors and Diodes Absolute M aximum Ratings Te*25uC Type No. Structure PNP Epitaxial Package N E C M INI M O L O Regular' Electrical Characteristics Ta«25°C>
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2sk672sk160transistor 5bwtransistor 5dw+85dw transistor3bw transistor2sc1009transistor 3bw1bw npnnpn2sc2351nec mnec microwave
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2Sc945 equivalent
Abstract: 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent
Contextual Info: 10. Specifications of MINI M O L D Device Typ« Number Regular /Reversal 2SA811 2SA812/2SA812R PNP Tran sistor NPN Tranlilto r Nearest Equivalent* ' M M BA811.M M BA812 | BCW29.SCW 30,BCW 69,8CW 70,MMBTA70 TO-92 Packaged Equivalent Page 2SA641 21 2SA733.BC556.BC5571BC558,BC559,BC560
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2sa8112sa812/2sa812r2sb624/2sb624r2s8736/2s8736r+16907a/ntm2907artm3906/ntm3906rba811ba8122sa6412sc945 equivalent2sa733 equivalent2sa733b2sc1623 equivalent2sc2002 equivalent2sc12162sa6032sk1042sc9232sc2001 equivalent
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2SD596
Abstract: 2S8624 2S0806
Contextual Info: 2SD596.2SD596R Audio Frequency Power Amplifier NPN Silicon Epitaxial Transistor • Complimentary to 2S8624, 2SB624R PACKAGE DIMENSIONS • High DC Current Gain: h FE - 200 TYP. <VCE-1 .0 V , l c - 100mA in m illim a ttrt inches) ¿5 g) (0.098) 0.5 '% îl (0 02)
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2sd5962sd596r2s86242sb624r+2100ma2s0806
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