2SD1898 Search Results

2SD1733

Abstract: 2SB1181 2SB1241 2SB1260 2SD1768S 2SD1863 2SD1898 SC-72
Contextual Info: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V

2SD1898

Abstract: 100MHZ
Contextual Info: 2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. A B

Contextual Info: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1

ScansU9X27

Contextual Info: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)

Contextual Info: UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A DC *Good hFE linearity. *Low VCE(sat) *Complements the 2SB1260. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL

transistor b54

Abstract: transistor 222 2sB1241 2SB1181 2SB1260 2SD1733 2SD1863 2SD1898 high hfe transistor
Contextual Info: Transistors Power Transistor *80V, *1A 2SB1260 / 2SB1181 / 2SB1241 FFeatures 1) High breakdown voltage and high current. VCEO = *80V, IC = *1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. FExternal dimensions (Units: mm)

2SD1898

Abstract: NPN Silicon Epitaxial Planar Transistor 100MHZ
Contextual Info: 2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. A B

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD1898 Features • • • • • High VCEO, VCEO=80V High IC, IC=1.0A DC Good hFE linearity Low VCE(sat) Complements the 2SB1260/2SB1241/2SB1181

Vceo 80V Ic 0.5A

Abstract: 2SD1898 MARKING SMD TRANSISTOR P 2sd1898 smd SMD TRANSISTOR transistor smd marking smd transistor
Contextual Info: Transistors SMD Type Power Transistor 2SD1898 Features High VCEO, VCEO=80V . High IC, IC=1A DC . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage

2SD1898

Contextual Info: 2SD1898 Epitaxial Planar NPN Transistors SOT-89 * “G” Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Limits Unit Collector-Base Voltage VCBO 100 Vdc Collector-Emitter Voltage VCEO 80 Vdc Emitter-Base Voltage

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589

4288A

Abstract: 2sc3936 hitachi 4269 2SC4903 2SC3874 2SC3995 2SC4186 2SC3931 2SC3210 2SC4083
Contextual Info: - 18 6 - Si € Type No. tt € Manuf. 1nJ 1“ ^ £ tN 2SC 4247 2SC 4248 2SC 4249 H * SANYO a s£ % TOSHIBA NEC ± a FUJITSU % T MATSUSHITA 2SC4404 2SC4186 2SC4903 2SC3934 2SC4404 2SC4186 2SC4264 2SC3934 2SC4263 2SC3931 2SC4400 2SC 4250 tL HITACHI H £ MITSUBISHI

2SC4542

Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555
Contextual Info: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313

2SC3444

Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
Contextual Info: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

2SB1181

Abstract: 2SB1241 2SB1260 2SD1733 2SD1863 2SD1898
Contextual Info: 2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor −80V, −1A 2SB1260 / 2SB1181 / 2SB1241 !External dimensions (Units : mm) 2SB1260 2SB1181 0.5±0.1 0.4±0.1 1.5±0.1 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.3±0.2 1.0±0.2 (1) (2) (3) Abbreviated

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

Contextual Info: Power Transistor −80V, −1A 2SB1260 / 2SB1181 Dimensions (Unit : mm) 2SB1260 2SB1181 0.4+0.1 9.5±0.5 1.5 0.9 0.55±0.1 2.3±0.2 0.4±0.1 1.5±0.1 2.5 5.5+0.3 4.0 ±0.3 2.5+0.2 1.0±0.2 Structure Epitaxial planar type PNP silicon transistor (3)

2SC3082K

Abstract: BCX53 Rohm RF Transistors sot-23 RXT-A76 2SA1037KLN 2SA1455K 2SC2059K 2SC2412KLN 1100 SOT-89 2SC3802K
Contextual Info: ROHM CORP ‘ •fi * Other Popular JapSnGSS SOT-23 Types t - F u n ctio n Type - D E |7fl2flT= H QD01D7fl 7 7 ~ - 2 .? -< ? / _ V c E O ÌV : ' Jtìim A ) - *N e w P rodu cts P c im W ) C o b p F ) . . . F ife o U n der D evelopm ent