2SD161 Search Results

cross reference ic

Abstract: 2SD1616A
Contextual Info: DC COMPONENTS CO., LTD. 2SD1616A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency power amplifier and medium-speed switching applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter

2SB1118

Abstract: 2sd1618
Contextual Info: ¡ O rd e rin g n u m b e r .E N 1 7 8 4 B 2SB1118/2SD1618 N0.1784B PNP/NPN Epitaxial Planar Silicon Transistors Low-Voltage, High-Current Amp, _ Muting Applications Features . Low collector-to-emitter saturation voltage. . Very small size making it easy to provide high-density,

2SD1611

Abstract: 2SD16H package s4t
Contextual Info: Power T ransistors 2SD 1611 2SD1611 Silicon Triple-Diffused Planar Darlington Type P ow e r Am plifier P ackage D im ension s • Fe a tu res • High DC cu rren t gain I if e • High collector-base voltage ( V Cbo ) • “N T ype" package configuration with a cooling fin for direct soldering

D1616A

Abstract: d1616 transistor d1616a utc d1616a UTC d1616
Contextual Info: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150

D1616A

Abstract: utc d1616a d1616 transistor d1616a TRANSISTOR D1616 npn switching transistor Ic 100mA D1616A g TRANSISTOR pc 135 audio output TRANSISTOR NPN
Contextual Info: UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 1 SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Tstg -55 ~+150

utc d1616a

Abstract: D1616A d1616 transistor d1616a TRANSISTOR D1616
Contextual Info: UNISONIC TECHNOLOGIES CO., 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 TO-92 *Pb-free plating product number: 2SD1616L/2SD1616AL PIN CONFIGURATION PIN NO.

smd npn darlington

Abstract: 2SD1611
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type Darlington 2SD1611 TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25

smd marking DA

Abstract: marking da 2SD1618 DA SMD SMD BR 08 DA marking
Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SD1618 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

SMD Transistor XK

Abstract: SMD MARKING XL transistor XM smd xl transistor smd marking xk 2SD1614 hFE CLASSIFICATION Marking MARKING SMD xl xl marking
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1614 Features World standard miniature package. High dc current gain. Low VCE sat . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage

Contextual Info: Transistors SMD Type Product specification 2SD1619 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage

2sd1609

Contextual Info: 2SD1609, 2SD1610 Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO -126 MOD 1 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage

2SB1119

Abstract: Medium Power Transistor 2SD1619 2sb111 SOT89B-1
Contextual Info: 2SB1119/2SD1619 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product D D1 A FEATURES E E1 SOT-89 b1     Power dissipation   P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage

2SB1116A

Abstract: 2SB1116AK 2SD1616A 2sb1116-al 2SB1116AL 2SD1616A-G 2SD1616AG
Contextual Info: 2SB1116A -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation Complementary to 2SD1616A G H 1Emitter 2Collector 3Base

2SD1616A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1616A TO-92 TRANSISTOR NPN FEATURE Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. BSAE Symbol Parameter Value Units

2SD1616A

Abstract: transistor 468
Contextual Info: ELECTRONICS MICRO DESCRIPTION 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application. 2SD1616A NPN SILICON TRANSISTOR 4.68 0.18 TO-92B 4.6 (0.18) 12.7 (0.5) min. 3.58 B CE (0.14)

2SD1616

Abstract: 2SD1616A
Contextual Info: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be

d1609

Abstract: D1610
Contextual Info: 2SD1609,2SD1610 Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage

2SB1119

Abstract: 2SD1619 2SD619
Contextual Info: Ordering number: EN 1785A 2SB1119/2SD1619 PNP/NPN Epitaxial Planar Silicon Transistors LF Amp, Electronic Governor Applications Features . Very small size making it easy to provide high-density, IC*s : 2SB1119 Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1616 TRANSISTOR（ NPN ） TO—92 FEATURE Power dissipation PCM： 0.75 W（Tamb=25℃） Collector current ICM： 1 A Collector-base voltage V BR CBO： 60 V Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TO-92 TRANSISTOR PNP 1. EMITTER FEATURES • High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SD1616A

Abstract: 2SD1616AL B200A 2SD1616 2sd1616l-x-t9s-k B300A 2SD1616AL TO-92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 1 SOT-89 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 TO-92 1 SIP-3 1 TO-92SP *Pb-free plating product number: 2SD1616L/2SD1616AL ORDERING INFORMATION

2SD1616

Abstract: 2SD1616A
Contextual Info: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be

2SD1616

Contextual Info: 2SD1616 2SD1616 TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 3. BSAE 1 2 3 TJ, Tstg: -55℃ to +150℃

2SD1616A

Contextual Info: 2SD1616A 2SD1616A TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range 3. BSAE 1 2 3 TJ, Tstg: -55℃ to +150℃