2SD1251A Search Results

2SB1251

Abstract: 2SD1251A
Contextual Info: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type For power amplification Unit: mm • Features 6.0±0.2 1.0±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current Base current

Contextual Info: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 1.5±0.1 10.0±0.3 Wide area of safe operation ASO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Contextual Info: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 3.4±0.3 8.5±0.2 For power amplification 1.0±0.1 M Di ain sc te on na tin nc ue e/ d 1.5±0.1 10.0±0.3 6.0±0.5 • Features Wide area of safe operation ASO N type package enabling direct soldering of the radiating fin to

2SD1251A

Contextual Info: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type Unit: mm 10.0±0.3 • Features • Wide area of safe operation ASO • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Contextual Info: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type For power amplification Unit: mm 1.0±0.1 Symbol Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)

2SD1251

Abstract: 2SD1251A
Contextual Info: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 2.0 0.8±0.1 TC=25˚C Ratings 2.54±0.3 5.08±0.5 Unit 1 V 80 Emitter to base voltage VEBO 8 V Peak collector current ICP 6 A Collector current IC 4 A Base current IB 1 A Collector power TC=25°C

2SB1251

Abstract: 2SD1251A
Contextual Info: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type For power amplification Unit: mm Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) VEBO 8

Contextual Info: Power Transistors 2SD1251, 2SD1251A 2SD1251, 2SD1251A Silicon N P N Trip le -D iffu se d Planar Type P ack age D im ension s P ow e r A m plifier Unit ! • Fe a tu re s 3.7max, 8.7 max. • W ide a re a of s a fe ty o p e ra tio n ASO • “N T y p e ” p ack ag e co n fig u ratio n w ith a cooling fin fo r d ire c t so ld e rin g

smk 630

Abstract: 2SD1251 2SD1251A A629A
Contextual Info: 2SD1251, 2SD1251A P o w er T ra n s is to rs 2SD1251, 2SD1251A Silicon NPN Triple-Diffused Planar Type P a c k a g e D im e n s io n s P o w e r A m p lifie r U n it ! • F e a tu re s • W ide a re a of sa fe ty o p e ra tio n ASO 8.7 max. • “N T y p e " p ack ag e co n fig u ratio n w ith a cooling fin fo r d ire c t so ld e rin g

2SD1251

Abstract: 2SD1251A
Contextual Info: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 2.0 0.8±0.1 TC=25˚C Ratings 2.54±0.3 5.08±0.5 Unit 1 V 80 Emitter to base voltage VEBO 8 V Peak collector current ICP 6 A Collector current IC 4 A Base current IB 1 A Collector power TC=25°C

2SD1251

Abstract: 2SD1251A
Contextual Info: Power Transistors 2SD1251, 2SD1251A Silicon NPN triple diffusion junction type 3.4±0.3 8.5±0.2 For power amplification 1.0±0.1 Wide area of safe operation ASO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

BD149

Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25

Contextual Info: Transistors IC SMD Type Product specification 2SD1251,2SD1251A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1

2SD1251

Abstract: 2SD1251A
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25

2SD1204

Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691