Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD1056 Search Results

    2SD1056 Datasheets (4)

    Others
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SD1056
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 88.78KB 2
    2SD1056
    Unknown The Japanese Transistor Manual 1981 Scan PDF 107.18KB 2
    2SD1056
    Unknown Triple Diffused Planar Type Transistor Scan PDF 52.53KB 1
    2SD1056
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 128.68KB 1

    2SD1056 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SD1056

    Abstract: high power free wheeling diode
    Contextual Info: 2SD1056 FUJI POWER TRANSISTOR NPN三重拡散プレーナ形 ハイパワーダーリントン TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON 高耐圧大電流、スイッチング用 HIGH VOLTAGE,HIGH CURRENT,SWITCHING 外形寸法 : Outline Drawings


    Original
    2sd1056high power free wheeling diode PDF

    2SD1056

    Abstract: 2SD1056 EQUIVALENT
    Contextual Info: 2SD1056 | ± ^ 7 -F 7 > y ^ NPN = n$km -7i'-1-M TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON ÜÜfEi, HIGE VOLTAGE, HIGH CURRENT, SWITCHING : Features • hFE^iiV.' High D. C. current gain • hFE<7 U—7r U-r-<*’i'J:v.' • ASO *'*/SL' • n S it ilt t


    OCR Scan
    2sd1056rc-19tb-30200ma+250//s2sd1056 equivalent PDF

    2SD1028

    Abstract: 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004
    Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1001 80 5 300 2W 150 200 1 50 140* 7 2SB800 2SD1002 45 5 1A


    Original
    2sd10012sb8002sd10022sd1003+152sd10042sd10052sb8042sd10062sb8052sd10072sd10282sd10312sd10362sd10942sd10872sd10132sd10192sd1037equivalent 2sd1028 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711 PDF

    2SD1036

    Abstract: 2SD1038 2SD1041 2SD1040 t03h 2SD1010 2SD1007 2sd1011 2SD1017 2SD1037
    Contextual Info: - 232 - JfcfcÊfë Tfij -t? f± £ ffl JÈ T a = 2 5 cC , * E P I à T c = 2 5 lO VCBO Vc e o icÎDO (V (V) (A) (W) f t tt (Ta=25°C> (W) (max) ÎuA ) VCB (min) [*EPfàtyp{I] VcEÍsat ) ^VsEÎsat) E 1CBO (max) (V) \maxj (V) ic/'ÎE U) Vc e (V) (V) le (A)


    OCR Scan
    2sd9992sd10002sd10012sd1005+142sd10062sd10072sd10092sd10412sd10422sb8162sd10362sd10382sd1040t03h2sd10102sd10112sd10172sd1037 PDF