2SC6133 Search Results
2SC6133 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2SC6133 | Toshiba | Transistors | Original | 139.18KB | 4 | ||
| 2SC6133 | Toshiba | Japanese - Transistors | Original | 207.78KB | 4 |
2SC6133 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SC6133Contextual Info: 2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 2.1±0.1 High-speed switching: tf = 45 ns typ. +0.1 0.3 -0.05 • 1 3 2 0.166±0.05 High DC current gain: hFE = 400 to 1000 (IC = 0.15A) |
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2sc6133 | |
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Contextual Info: 2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 2.1±0.1 Low collector-emitter saturation voltage: VCE sat = 0.12 V (max) • High-speed switching: tf = 45 ns (typ.) +0.1 |
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2sc6133 | |
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Contextual Info: 2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 2.1±0.1 Low collector-emitter saturation voltage: VCE sat = 0.12 V (max) • High-speed switching: tf = 45 ns (typ.) +0.1 |
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2sc6133 | |
TransistorsContextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6133 Category: Transistors /Bipolar Small-Signal Transistors/General Purpose Transistors Single |
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2sc613316-apr-09transistors | |
2SC6133Contextual Info: 2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications DC-DC Converter Applications Unit: mm 2.1±0.1 Low collector-emitter saturation voltage: VCE sat = 0.12 V (max) • High-speed switching: tf = 45 ns (typ.) +0.1 |
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2sc6133 | |
2SC6133Contextual Info: 2SC6133 東芝トランジスタ シリコンNPNエピタキシャル形 2SC6133 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm 2.1±0.1 コレクタ・エミッタ間飽和電圧が低い。 : VCE sat = 0.12 V (最大) • 1 3 2 |
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2sc6133 | |
lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
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bce0030cs-167bce0030dlm2804+9 | |
SSM3J307T
Abstract: SSM3J328R SSM3J334R
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200-mabce0030dssm3j307tssm3j328r+1 | |
GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
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sce0004lttc41162sc4118tta1586+16 | |
IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
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scj0004rsc-432sc18152sc732tm+14 | |
GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
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2010/9sce0004ksc-432sc1815700the+10 | |
transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
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sc-432sc1815tps615tps616+11 | |
TPCA*8030
Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
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tc7sz126fusc-88aot-353bcj0052e+11 | |
GT45F122
Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
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scj0004osc-432sc18152sc732tm+14 | |
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*45F122
Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
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scj0004osc-432sc18152sc732tm+14 | |