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    2SC587 Search Results

    2SC587 Datasheets (42)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC587
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 51.16KB 1
    2SC587
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 35.04KB 1
    2SC587
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 84.86KB 1
    2SC587
    Unknown Cross Reference Datasheet Scan PDF 39.08KB 1
    2SC587
    Unknown Transistor Substitution Data Book 1993 Scan PDF 34.52KB 1
    2SC587
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 91.12KB 1
    2SC587
    Unknown Vintage Transistor Datasheets Scan PDF 49.23KB 1
    2SC587
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 124.63KB 1
    2SC587
    Unknown The Japanese Transistor Manual 1981 Scan PDF 112.69KB 2
    2SC587
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 43.84KB 1
    2SC5873S
    ROHM Medium power transistor (30V, 0.5A) Original PDF 67.07KB 4
    2SC5874S
    ROHM Medium power transistor (30V, 1.0A) Original PDF 86.28KB 4
    2SC5874STPR
    ROHM Medium Power Transistor (30 V, 1.0 A) Original PDF 75.65KB 3
    2SC5875
    ROHM Power transistor (30V, 2A) Original PDF 85.78KB 4
    2SC5875TV2Q
    ROHM Power Transistor (30 V, 2 A) Original PDF 75.14KB 3
    2SC5875TV2R
    ROHM Power Transistor (30 V, 2 A) Original PDF 75.14KB 3
    2SC5876
    ROHM Medium power transistor (60V, 0.5A) Original PDF 42.99KB 4
    2SC5876
    ROHM Medium power transistor (60V, 0.5A) Original PDF 61.81KB 4
    2SC5876T106Q
    ROHM Medium Power Transistor (60 V, 0.5 A) Original PDF 34.6KB 3
    2SC5876T106Q
    ROHM TRANS NPN 60V 0.5A SOT-323 Original PDF 61.86KB 4
    SF Impression Pixel

    2SC587 Price and Stock

    ROHM Semiconductor

    ROHM Semiconductor 2SC5876T106R

    Trans GP BJT NPN 60V 0.5A 200mW 3-Pin UMT T/R
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    Verical () 2SC5876T106R 111,793 24
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    2SC5876T106R 6,000 400
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    Arrow Electronics 2SC5876T106R Cut Strips 111,793 18 Weeks 1
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    Avnet Asia 2SC5876T106R 24 Weeks 3,000
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    Avnet Silica 2SC5876T106R 10 Weeks 3,000
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    ROHM Semiconductor 2SC5876U3T106Q

    Trans GP BJT NPN 60V 0.5A 200mW 3-Pin UMT
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    Verical () 2SC5876U3T106Q 11,500 596
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    2SC5876U3T106Q 2,988 21
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    Arrow Electronics 2SC5876U3T106Q Cut Strips 2,988 18 Weeks 1
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    Newark () 2SC5876U3T106Q Tape & Reel 540 100
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    2SC5876U3T106Q Cut Tape 540 5
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    Quest Components 2SC5876U3T106Q 9,200
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    Avnet Asia 2SC5876U3T106Q 24 Weeks 3,000
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    Avnet Silica 2SC5876U3T106Q 16 Weeks 3,000
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    ROHM Semiconductor 2SC5876U3HZGT106Q

    Medium Power Transistor for Automotive
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    Verical () 2SC5876U3HZGT106Q 2,150 511
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    2SC5876U3HZGT106Q 58 19
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    Arrow Electronics 2SC5876U3HZGT106Q Cut Strips 58 18 Weeks 1
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    TTI 2SC5876U3HZGT106Q Reel 3,000
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    Quest Components 2SC5876U3HZGT106Q 1,720
    • 1 $0.93
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    TME 2SC5876U3HZGT106Q 2,150 492
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    Ameya Holding Limited 2SC5876U3HZGT106Q 2,770 1
    • 1 $0.23
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    Avnet Silica 2SC5876U3HZGT106Q 16 Weeks 3,000
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    ROHM Semiconductor 2SC5876U3T106R

    0
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    Verical 2SC5876U3T106R 1,060 22
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    Arrow Electronics 2SC5876U3T106R Cut Strips 1,060 17 Weeks 1
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    TTI 2SC5876U3T106R Reel 3,000
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    Ameya Holding Limited 2SC5876U3T106R 7,760 1
    • 1 $0.19
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    Avnet Silica 2SC5876U3T106R 16 Weeks 3,000
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    ROHM Semiconductor 2SC5876T106Q

    Trans GP BJT NPN 60V 0.5A 200mW 3-Pin UMT T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Arrow Electronics 2SC5876T106Q Cut Strips 10 18 Weeks 1
    • 1 $0.71
    • 10 $0.43
    • 100 $0.28
    • 1000 $0.22
    • 10000 $0.15
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    Quest Components 2SC5876T106Q 969
    • 1 $0.70
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    TME 2SC5876T106Q 1
    • 1 $0.59
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    Avnet Asia 2SC5876T106Q 24 Weeks 3,000
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    Avnet Silica 2SC5876T106Q 16 Weeks 3,000
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    2SC587 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA2088

    Abstract: 2SC5876 T106
    Contextual Info: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original
    2sc5876500ma150mv100ma+32sa2088r1120at106 PDF

    Contextual Info: Medium power transistor 60V, 0.5A AEC-Q101 Qualified 2SC5876FRA 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original
    aec-q1012sc5876fra500ma150mv+4100ma2sa2088fra2sa2088r1120a PDF

    C5875

    Abstract: 2SA2087 2SC5875
    Contextual Info: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and


    Original
    2sc5875200mv2sa208765max+1c5875 PDF

    Contextual Info: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original
    2sc5876500ma150mv100ma+22sa2088r1120a PDF

    2SA2085S

    Abstract: 2SC5873S
    Contextual Info: 2SC5873S Transistors Medium power transistor 30V, 0.5A 2SC5873S zExternal dimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and


    Original
    2sc5873s500ma150mv100ma+32sa2085s15minc5873s PDF

    2SA2089S

    Abstract: 2SC5877S C5877
    Contextual Info: 2SC5877S Transistors Power transistor 60V, 0.5A 2SC5877S !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and


    Original
    2sc5877s500ma150mv100ma+42sa2089s15minc5877sc5877 PDF

    Contextual Info: 2SC5873S Transistors Medium power transistor 30V, 0.5A 2SC5873S zExternal dimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and


    Original
    2sc5873s500ma150mv100ma+32sa2085s15minc5873s PDF

    2SA2088

    Abstract: 2SC5876 T106
    Contextual Info: 2SC5876 Transistor Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original
    2sc5876500ma150mv100ma+22sa2088t106 PDF

    2SC5876

    Abstract: 2SA2088 T106
    Contextual Info: 2SC5876 Transistor Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original
    2sc5876500ma150mv100ma+22sa2088t106 PDF

    Contextual Info: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) 0.3 (3) (2) UMT3 0.65 0.65 Dimensions (Unit : mm) 0.7 Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original
    2sc5876500ma150mv100ma+22sa2088r1120a PDF

    equivalent ZO 607

    Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
    Contextual Info: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


    Original
    htt1132erej03g0008-0100z2sc58722sc5849+2equivalent zo 607702 smd transistor PDF

    2SA20

    Abstract: 2SA2086S 2SC5874S
    Contextual Info: 2SC5874S Transistors Medium power transistor 30V, 1.0A 2SC5874S !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 1.0A) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and


    Original
    2sc5874s150mv100ma2sa2086s+315minc5874s2sa20 PDF

    2sa2085

    Abstract: 2SA20 2SC5873S 2SC587 2sa2085S
    Contextual Info: 2SC5873S Transistors Medium power transistor 30V, 0.5A 2SC5873S zExternal dimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and


    Original
    2sc5873s500ma150mv100ma+62sa2085s15minc5873s2sa20852sa202sc587 PDF

    2SA20

    Abstract: 2SA2089S 2SC5877S
    Contextual Info: 2SC5877S Transistors Power transistor 60V, 0.5A 2SC5877S !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and


    Original
    2sc5877s500ma150mv100ma+42sa2089s15minc5877s2sa20 PDF

    702 transistor smd code

    Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
    Contextual Info: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


    Original
    htt1132erej03g0008-0100z2sc58722sc5849+7702 transistor smd code853 smd 6-pinequivalent zo 607smd transistor 805 2390532smd transistor 718transistor smd 661 752 PDF

    2SA2086S

    Abstract: 2SC5874S
    Contextual Info: 2SC5874S Transistors Medium power transistor 30V, 1.0A 2SC5874S !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 1.0A) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and


    Original
    2sc5874s150mv100ma2sa2086s+215minc5874s PDF

    C5875

    Abstract: 2SA20 2SA2087 2SC5875
    Contextual Info: 2SC5875 Transistors Power transistor 30V, 2A 2SC5875 !External dimensions (Unit : mm) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and


    Original
    2sc5875200mv2sa208765max+2c58752sa20 PDF

    Diode 1588

    Abstract: Q2SC5876 2SC5876
    Contextual Info: SPICE PARAMETER 2SC5876 by ROHM TR Div. * 2SC5876 NPN BJT model * Date: 2006/11/13 .MODEL 2SC5876 NPN + IS=120.00E-15 + BF=307.96 + VAF=100 + IKF=.76113 + ISE=120.00E-15 + NE=1.3985 + BR=6.1588 + VAR=100 + IKR=4.8827 + ISC=2.8942E-12 + NC=1.3100 + NK=.76124


    Original
    2sc5876q2sc587600e-158942e-12+5521e-3151e-12141e-1275e-12diode 1588 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide PDF

    SC522-M

    Abstract: 60407 2SC520A 2SA499-M sc522 2SC512M 2SC519A m50801 SA512 2SC520A-M
    Contextual Info: 1 .R lrfr O * » » * * ft VcBO m % # m % * m it m % VcEO % « V kbo T a = 25’C ) le Pc & Inui T, MAX (T c= 2512) MIN TYP VCR (V ) MS0801-60403 2 SA499-M F N P M S080I-60403 2SA50Ö-M I 'N P MS0902—60581 2 S A 503-M P N P M S0902—60582 2 S A 5 1 0 -M


    OCR Scan
    ms0801-604032sa499-mmsoeoi-60403ms0902+12sa503sa510-msa512-msc522-m604072sc520asc5222sc512m2sc519am50801sa5122sc520a-m PDF

    2SA2089S

    Abstract: 2SC5877S SC-72
    Contextual Info: 2SA2089S Transistors Medium power transistor −60V, −0.5A 2SA2089S !External dimensions (Unit : mm) SPT (SC-72) 2.0 3Min. 3.0 4.0 (15Min.) !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100mA, IB = −10mA)


    Original
    2sa2089ssc-7215min-500ma+5-150mv-100ma-10ma2sc5877sa2089s PDF

    2SA20

    Abstract: 2SA2086S 2SC5874S
    Contextual Info: 2SA2086S Transistors Medium power transistor −30V, −1A 2SA2086S !External dimensions (Unit : mm) 4.0 2.0 3Min. 3.0 SPT (15Min.) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −1A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −1.0A, IB = −100mA)


    Original
    2sa2086s15min-150mv-100ma+32sc5874sa2086s2sa20 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original
    gp-20fsq510 equivalentbta12 6008bta16 6008+7zigbee interface with avr atmega16precision triac control thermostatthyristor t 558 f eupecgw 5819 diodetransistor a564a564 transistorbsm25gp120 b2 PDF