2SC561 Search Results

5252 F 0911

Abstract: 5252 F 1108 2SC5615-T3 2SC5615 5252 F 0906
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz

TRANSISTOR C 5387

Abstract: nec 2035 744 9012 transistor
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • 3-pin lead-less minimold package

nec 2035 744

Abstract: MARKING W1 2SC5618 2SC5618-T3
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • 3-pin lead-less minimold package

2SC5612

Contextual Info: 2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV l High Voltage Unit: mm : VCBO = 2000 V l Low Saturation Voltage : VCE sat = 3 V (Max.) l High Speed : tf = 0.15µs (Typ.) MAXIMUM RATINGS (Tc = 25°C)

09 06 248 6834

Abstract: 2SC5616-T3 2SC5616
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5616 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin lead-less minimold package 1005 PKG

2SC5610

Abstract: 2SA2022 2SC561 2SA20 TA247
Contextual Info: Ordering number:ENN6367 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2022/2SC5610 DC/DC Converter Applications Applications Package Dimensions • Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2041A Features [2SA2022/2SC5610] · Adoption of MBIT processes.

nec 2035 744

Abstract: 2SC5618 2SC5618-T3
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • 3-pin lead-less minimold package

5252 F 1108

Abstract: 5252 F 1008 5252 F 1004
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz

2SC5612

Abstract: T17F
Contextual Info: TOSHIBA 2SC5612 2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Y o V — f s] , VCBO = 2000 V VCE sat = 3 v (Max.) tf = 0.15 jus (Typ.) V o V , 1.5 , n (T T > s n High Voltage Low Saturation Voltage

2SC5610

Abstract: 2sc5610spice
Contextual Info: 2SC5610 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 1.200p NF 1 IKF 3.5 NE 2 NR 1 2.4 IKR NC 2 IRB 200.0m RE 23.00m XTB 1.3 XTI 3 VJE 600.0m TF 400p VTF 10 PTF VJC 550.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm

2SC5612

Contextual Info: 2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV z High Voltage : VCBO = 2000 V z Low Saturation Voltage : VCE sat = 3 V (Max.) z High Speed : tf = 0.15µs (Typ.) Unit: mm ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)

Contextual Info: 2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV z High Voltage Unit: mm : VCBO = 2000 V z Low Saturation Voltage : VCE sat = 3 V (Max.) z High Speed : tf = 0.15 s (Typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)

toshiba marking code transistor

Abstract: 2SC5612
Contextual Info: 2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : VCBO = 2000 V Low Saturation Voltage : VCE sat = 3 V (Max.) High Speed : tf = 0.15µs (Typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C)

2SC5614

Abstract: 2SC5614-T3 "3-PIN LEAD-LESS MINIMOLD"
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5614 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.4 dB TYP., S21e2 = 10.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz • 3-pin lead-less minimold package ORDERING INFORMATION

2SC5612

Contextual Info: 2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage Unit: mm : VCBO = 2000 V Low Saturation Voltage : VCE sat = 3 V (Max.) High Speed : tf = 0.15µs (Typ.) MAXIMUM RATINGS (Tc = 25°C)

2SC5617

Abstract: 2SC5617-T3 nec 7862 NEC 2851
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5617 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-pin lead-less minimold package

2SC5617

Abstract: nec K 3570 2SC5617-T3 marking y1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5617 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • S21e2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-pin lead-less minimold package

5252 F 1108

Abstract: 5252 F 1104 5252 F 1120 5252 F 1103 5252 F 1114 2SC5615 5252 F 1105 5252 F 0911 5252 1101 5252 F 1105 transistor
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz

Contextual Info: TO SH IBA 2SC5612 2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV • • • High Voltage Low Saturation Voltage High Speed VCBO = 2000 V VCE sat = 3 v (Max.) tf = 0.15 /us (Typ.) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA TENTATIVE 2SC5612 2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Y o V — f s] Vo V - 4 3 *! +i i _ p —O t^-TF <•£> Í P <N 1.5 r\i I *,n T T > s is * <£> , , VCBO = 2000 V

Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5614 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.4 dB TYP., S21e2 = 10.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz • 3-pin lead-less minimold package ORDERING INFORMATION

MA106

Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5617 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-pin lead-less minimold package

2SC5614-T3

Abstract: 2SC5614 c 9647 transistor
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5614 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.4 dB TYP., S21e2 = 10.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz • 3-pin lead-less minimold package ORDERING INFORMATION

2SC5610

Abstract: 2SA2022 TA2470 N636
Contextual Info: 注文コード No. N 6 3 6 7 2SA2022/2SC5610 No. N6367 O2099 新 2SA2022 / 2SC5610 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ DC / DC コンバータ用 用途 ・リレードライブ , ランプドライブ , モータドライブ , ストロボ。