2SC5415 Search Results

2SC5415

Abstract: ta1022 nte 1606
Contextual Info: Ordering number:ENN5911 NPN Epitaxial Planar Silicon Transistor 2SC5415 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions • High gain : S21e =9dB typ f=1GHz . · High cutoff frequency : fT=6.7GHz typ. 2 unit:mm 2038A [2SC5415]

Contextual Info: 2SC5415A Ordering number : ENA1080 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5415A High-Frequency Low-Noise Amplifier Applications Features • • High gain : ⏐S21e⏐2=9dB typ f=1GHz . High cut-off frequency : fT=6.7GHz typ.

ta1022

Abstract: 2SC5415
Contextual Info: Ordering number:ENN5911 NPN Epitaxial Planar Silicon Transistor 2SC5415 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions 2 • High gain : ⏐S21e⏐ =9dB typ f=1GHz . · High cutoff frequency : fT=6.7GHz typ. unit:mm 2038A [2SC5415]

473 0334 180 400

Abstract: 2SC5415A A1080 556 0206
Contextual Info: 2SC5415A 注文コード No. N A 1 0 8 0 三洋半導体データシート N 2SC5415A NPN エピタキシァルプレーナ型シリコントランジスタ 高周波低雑音増幅用 特長 ・高利得である：⏐S21e⏐2=9dB typ f=1GHz 。 ・しゃ断周波数が高い：fT=6.7GHz typ。

490-48

Abstract: 126-58-9 2SC5415A DSA0026081 I-T133
Contextual Info: 2SC5415A Ordering number : ENA1080 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5415A High-Frequency Low-Noise Amplifier Applications Features • • High gain : ⏐S21e⏐2=9dB typ f=1GHz . High cut-off frequency : fT=6.7GHz typ.

Contextual Info: 2SC5415A Ordering number : ENA1080 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5415A High-Frequency Low-Noise Amplifier Applications Features • • High gain : ⏐S21e⏐2=9dB typ f=1GHz . High cut-off frequency : fT=6.7GHz typ.

transistor A1080

Abstract: ENA1080A 459 MARKING sot89
Contextual Info: 2SC5415A Ordering number : ENA1080A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5415A High-Frequency Low-Noise Amplifier Applications Features High gain : ⏐S21e⏐2=9dB typ f=1GHz High cut-off frequency : fT=6.7GHz typ •

2038

Abstract: 2SC5415 N5911 IC 2164
Contextual Info: 注文コード No. N5911 No. 三洋半導体ニューズ 5911 22098 新 NPNピタキシァルプレ−ナ形シリコントランジスタ 2SC5415 特長 高周波低雑音増幅用 2 ・高利得である：│S21e│ ＝9dB typ f＝1GHz ・しゃ断周波数が高い：fT＝6.7GHz typ

Contextual Info: Ordering number : ENA1080A 2SC5415A RF Transistor 12V, 100mA, fT=6.7GHz, NPN Single PCP http://onsemi.com Features High gain : ⏐S21e⏐2=9dB typ f=1GHz High cut-off frequency : fT=6.7GHz typ • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter

Contextual Info: 2SC5415A Ordering number : ENA1080A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5415A High-Frequency Low-Noise Amplifier Applications Features High gain : ⏐S21e⏐2=9dB typ f=1GHz High cut-off frequency : fT=6.7GHz typ •

basel 332 k

Abstract: ZO 607 MA IC 1709 CN transistor zo 607 18896 IC 566 vco zo 607 2SC5245 2SC5415 MCP 901
Contextual Info: Ordering number:ENN6179 NPN Epitaxial Planar Silicon Composite Transistor FH203 VCO OSC Circuit Applications Features Package Dimensions •Composite type with a buffer transistor 2SC5245 and a oscillator transistors (2SC5415) contained in the currently provided M C P package as a VCO

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

F527S

Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553
Contextual Info: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.

2SC5502

Abstract: 2SC550 SSFP package C5226 c5414 2SC4931 2SC5488 2SC5489 C4871 2SC5536
Contextual Info: SAjfiYt NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES fo2 ande I e L u r i n i 0^ m n n ^ I ? V^ vhi B! T i r? |u?ncy £ ra n s is i o r? ,i;a" be used for v a rio u s a p p lic a tio n s such as fo r communication equipment ana m easuring equipm ent. They a re su p e rio r when used w ith low v o ltag e drive,

2SC5551

Abstract: SMA4306 FH102A cph6003 CPH6003A 15GN01CA NFC15-48S05-4 2SC5226 2sc5231 15GN01MA
Contextual Info: Ordering number : E I 0 0 8 2 Announcement Regarding the Discontinuation of High-frequency Transistors and Development of Replacement Products Thank you for using SANYO semiconductor products. Please note, as captioned above, we will be discontinuing the products listed in the table below.

smd transistor marking 12W

Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
Contextual Info: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3

2SC5245

Abstract: 2SC5415 FH203 IT00483 18896
Contextual Info: Ordering number:ENN6179 NPN Epitaxial Planar Silicon Composite Transistor FH203 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6

IT00483

Abstract: 2SC5245 2SC5415 FH203 IT00491
Contextual Info: Ordering number:ENN6179 NPN Epitaxial Planar Silicon Composite Transistor FH203 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6

transistor b764

Abstract: c2314 transistor transistor b985 transistor D1207 B892 transistor b892 c2314 D1111 TRANSISTOR C3117 TRANSISTOR d879 transistor
Contextual Info: SA ßfO PCP Power Chip Pack Transistor Series C a F" & a t u i - s * V e r y sm all s i z e making i t p o s s i b l e to p ro v id e h ig h - d e n s ity , s m a lI - s i z e d h y b rid lCs. * V a r io u s p a c k in g of d e v ic e s a r e a v a i la b l e to meet a u to m atic