2SC4838 Search Results

4946

Abstract: me 4946 4947 2SC5020 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
Contextual Info: - m % a « T y p e No. Manuf. = æ SANYO 2SC 4930 2SC 4931 z 2SC 4932 S 2SC 4933 2SC 4934 ^ 2SC 4935 3L 23C 4336 — 2SC 4940 — f 2 :v- NEC ÏZ. HITACHI s ± il FUJITSU ta t M ATSUS H I T A 2SC4838 ZdLOUUO 2SC4808 2SC4805 2SD2228 2SD1820 2SC3440 2SC4211

transistor D 2331

Abstract: 2331 TRANSISTOR T31B
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed fo r RF power amplifiers in 1.65GHz. 4 + 0.5 C1.5MAX C1.5MAX FEATURES

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed -for RF power amplifiers in 1,65GHz. FEATURES High power gain : Gpb S 9.3dB, Po fe 6W

TE 2556

Abstract: T31B 2SC4526 2SC4525 2SC4838 286j
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2S C 4838 is a silicon NPN epitaxial planar typ e transistor Dimension in mm specifically designed fo r RF pow er am plifiers in 1.65GHz. FEATURES • High pow er gain : Gob £ 9.3dB, Po 6 6W

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

HPA C band

Contextual Info: • 15V Series for C A TV /M A T V Amplifiers <Tc = 25’C> Max. ratines Type No. Application HPA 2SC1324 Structur# Si,NPN,EP > fa {A} Pc W 35 4.0 0.15 3 A + 175 (ài (min) .{Hh-c leao w UA) Sf f (MHz) •c (mA) dB 50 50 15 770 0.03 9 Wm Package outline