2SC4525 Search Results

2SC4525

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2SC4525 is a silicon NPN epitaxial planar type transistor specifically designed fo r RF power amplifiers applications in 1,65GHz. FEATURES • High power gain: Gpb ^ 6.0dB, P0 = 20W

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR T Y P E D IS C R E T IO N 2 S C 45 2 5 is a silicon N P N epitaxial planar type transistor sp e cifica lly designed fo r R F power am plifiers applications in 1 .65 G H z. FEATURES • High power gain: G p b ^ 6.0dB , P0 = 20W

2sc4525

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2 S C 4 5 2 5 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications in 1.65G H z. FEATURES • • High power gain: G p b ^ 6.0dB, P0 = 2 0W

transistor D 2331

Abstract: 2331 TRANSISTOR T31B
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed fo r RF power amplifiers in 1.65GHz. 4 + 0.5 C1.5MAX C1.5MAX FEATURES

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

2SC4515

Abstract: 2SC4536 2SC4561 2SC4550 c455 2SC4516 2SC4519 2SC4520 2SC4521 2SC4523
Contextual Info: - 206 - m X Ë f à <Ta=25,C 1*EPÍ¿Tc=25'C 2SC4515 föT HF LN A n VcBO Vc e o IcCDO Pc Pc* V) (V) (A) (W) (W) 15 10 0.05 "(max) (/¿A) 0.2 VcB (V) 1 10 % (min) ft 4# (max) iê (Ta=25<C ) (max) (V) ic/ÏE (A) Vc e (V) [*EP(atypffi] 50 300 8 0.01 (max) (V)

HPA C band

Contextual Info: • 15V Series for C A TV /M A T V Amplifiers <Tc = 25’C> Max. ratines Type No. Application HPA 2SC1324 Structur# Si,NPN,EP > fa {A} Pc W 35 4.0 0.15 3 A + 175 (ài (min) .{Hh-c leao w UA) Sf f (MHz) •c (mA) dB 50 50 15 770 0.03 9 Wm Package outline

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed -for RF power amplifiers in 1,65GHz. FEATURES High power gain : Gpb S 9.3dB, Po fe 6W

TE 2556

Abstract: T31B 2SC4526 2SC4525 2SC4838 286j
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2S C 4838 is a silicon NPN epitaxial planar typ e transistor Dimension in mm specifically designed fo r RF pow er am plifiers in 1.65GHz. FEATURES • High pow er gain : Gob £ 9.3dB, Po 6 6W

2sc4526 mitsubishi

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2SC 4526 is a silicon NPN epitaxial planar type transistor specifically designed for R F power amplifier applications in 1.65GHz. D im e n sio n s in m m