2SC465 Search Results

2SC4658

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4658 HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS Unit in mm FEATURES: • Excellent hj-E linearity : hFE=100~320 at VCE=1V, IC=1A • Low Collector Saturation Voltage : vCE sat = 0 -*v (Max.) at Ic=3A, Ib =0.15A

2SC4655J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification 1.00±0.05 • Features 0 to 0.02 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high-frequency amplification Complementary to 2SC4656J 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)

Contextual Info: Ordering number: EN 3581 2SA1787/2SC4650 PNP/NPN Epitaxial Planar Silicon Transistors High-Definition CRT Display _ Video Output Applications Features •High breakdown voltage : V c e o = 2 0 0 V • Small reverse transfer capacitance and excellent high frequency characteristic

2SA1786

Abstract: 2SA1787 2SC4650 ITR04700 ITR04701 ITR04702
Contextual Info: Ordering number:ENN3581 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1787/2SC4650 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high

2SA179

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SA1791G ue pl d in an c se ed lud pl vi an m m es si

2SC4655J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 • Features Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Package • Optimum for RF amplification, oscillation, mixing, and IF of

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655G Silicon NPN epitaxial planar type For high-frequency amplification • Package • Optimum for RF amplification, oscillation, mixing, and IF of FM/SAM radios • SS-Mini type package, allowing downsizing of the equipment

ITR04700

Abstract: ITR04701 ITR04702 2SA1786 2SA1787 2SC4650
Contextual Info: Ordering number:ENN3581 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1787/2SC4650 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SC4655

Abstract: SC-75
Contextual Info: Transistors 2SC4655 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Unit Collector-base voltage Emitter open VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open)

2SC4657

Abstract: 723DC
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4657 HIGH CURRENT SWITCHING APPLICATIONS. U n i t in m m FEATURES: • Exellent hpE Linearity : h F E = 1 2 0 ~ 4 0 0 at V C E =1V, I C= 1 A • Low Collector Saturation Voltage : v c E s a t = 0 l 4 v (M a x -) at I c = 3 A . I b = 0 -1 5 a

2SA1789

Abstract: 2SC4653 2sa178
Contextual Info: Inchange Semiconductor Product Specification 2SA1789 Silicon PNP Power Transistors • DESCRIPTION ·With TO-247 package ·Complement to type 2SC4653 ·Low collector saturation voltage APPLICATIONS ·For audio output applications PINNING PIN DESCRIPTION 1 Base

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791G • Features ■ Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob

EN3581

Abstract: 2SA1786
Contextual Info: Ordering number:EN3581 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1787/2SC4650 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high

2SA1791J

Abstract: 2SC4656J SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656J Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791J 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 5˚ Symbol Rating

2SC4655J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification 1.00±0.05 • Features 0.12+0.03 –0.01 Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open)

transistor marking c rank Y

Abstract: transistor marking AMq
Contextual Info: Panasonic Transistor 2SC4656 Silicon NPN epitaxial planer type For high-frequency am plification Unit: mm C om ple m e ntary to 2 S A 1 791 • 1.6+0.15 0.4 0.8+0.1 0.4 Features • Small collector output capacitance Cob. • SS-Mini type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 • Features 1 (0.375)

2SC4655

Abstract: SC-75
Contextual Info: Transistors 2SC4655 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Emitter-base voltage Collector open Collector current Collector power dissipation

2SA179

Abstract: 2SA1791J 2SC4656J SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656J Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791J 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Unit: mm

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SA1791

Abstract: 2SC4656
Contextual Info: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 0.2+0.1 –0.05 Parameter Symbol Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V