2SC309 Search Results

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3099 Unit in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure. N F= 1.7dB, |S 2 ie l2 = 15dB f= 500MHz NF = 2.5dB, |S2 ie l2 = 9.5dB(f=lGHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm V H F— UHF B A N D LO W NOISE AM PLIFIER APPLICATIONS. + 0.5 2.5 - 0 . 3 + 0 .2 5 1 .5 - 0 .1 5 • Low Noise Figure. dd . NF = 2.5dB, |S2iel2= 14.5dB f= 500MHz +I Et . NF = 3.0dB, |S2 ie l2 = 9.0dB(f=lGHz)

npn 10a 800v

Abstract: 2SC3090
Contextual Info: Inchange Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage VCBO≥800V ・Fast switching speed ・Wide ASO（Safe Operating Area） APPLICATIONS ・500V/10A Switching Regulator Applications

1013C

Abstract: 2SC3090 5.1b2 EN1013C ir1014
Contextual Info: Ordering number :EN1013C I 2SC3090 NO.X013C NPN Triple Diffused Planar Silicon Transistor For Switching Regulators Features . High breakdown voltage VCgQ^800V . . Fast switching speed. . Wide ASO. Absolute Maximum Ratings at Ta=25 C Collector-to-Base Voltage

2sc3090

Abstract: npn 10a 800v 10A Switching Regulator
Contextual Info: SavantIC Semiconductor Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage VCBO 800V ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·500V/10A Switching Regulator Applications

Contextual Info: TO SH IB A 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 U nit in mm U H F -C BAND LOW NOISE AMPLIFIER APPLICATIONS • • • Low Noise Figure NF = 2.5dB, |S2ie l2= 14.5dB f = 500MHz NF = 3.0dB, |S21el2= 9-0dB (f=lG H z) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: Transistors IC SMD Type Product specification 2SC3098 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=2.5dB,|S21e|2=14.5dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Contextual Info: Transistors IC SMD Type Product specification 2SC3099 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure 1 NF=1.7dB,|S21e|2=15dB f=500MHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1

2SC3115

Abstract: sC4633 2sc3114 2SC3136 2SC3098 2SC3099 2SC3102 2SC3103 2SC3104 2SC3105
Contextual Info: - 146 - WtXËfà 2g -g ÍT ffl -n & Vç b o VcEO IC DC Pc Pc* (A) (W) (W) (V) (V) 2SC3098 VHF/UHF LN A 30 20 0.05 0.15 20 0.03 0.15 2SC3099 * 2 VHF/UHF LN A 20 2SC31Ö1 HF PA 35 2SC3103 H# H « Hæ 2SC3104 (Ta=25°C) ( T a = 2 5 U *EP(ÌTc=25£C) ICBO. (max)

2SC3090

Abstract: ITR05351 ITR05352 ITR05353 ITR05354 ITR05355
Contextual Info: Ordering number:EN1013C NPN Triple Diffused Planar Silicon Transistor 2SC3090 500V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3090] 15.6

Contextual Info: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r ^ n Q R Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS. +Q 5 3 . 5 —Q 3 + Q 35 1-5 —0.15 • Low Noise Figure. . NF = 2.5dB, |S2lel2—14.5dB f = 500MHz . NF = 3.0dB, |S2lel2= 9-0dB(f=lGHz)

Contextual Info: 2SC3099 5ILIC0N NPN EPITAXIAL PLANAR TYPE TRANSISTOR U n it in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. + Q5 ;'.h -0.3 • •t 0.25 Low Noise Figure. I'. 1 'i N F = 1.7dB, |S21e|2= 15dB f= 500MHz N F = 2.5dB, 3 |S21el2 = 9 .5 d B (f= lG H z )

2SC3092

Contextual Info: Inchange Semiconductor Product Specification 2SC3092 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·500V/7A switching regulator applications PINNING see Fig.2

2SC309

Abstract: 2SC3098 uPI Semiconductor
Contextual Info: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. + a5 2.5 —0.3 • Low Noise Figure. . NF = 2.5dB, |S2lel2 —14.5dB f = 500MHz . NF = 3.0dB, |S2iel2 —9.0dB (f = 1GHz)

nzp 2SC3098

Abstract: 2SC3098 UI9600 GOOD-ARK Electronics ,nzp 2SC3098 GOOD-ARK IC 2030
Contextual Info: SUZHOU GOOD-ARK ELECTRONICS CO. LTD 2SC3098 TO-220 Plastic-Encapsulate Transistors 2SC3098 TRANSISTOR NPN TO-220 FEATURES Power amplifier applications 1. BASE 2. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted 3. EMITTER Symbol Parameter Value

Contextual Info: 2SC3098 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: TOSHIBA 2SC3099 TOSHIBA TRANSISTOR n r SILICON NPN EPITAXIAL PLANAR TYPE ^ n Q Q Unit in mm V H F ~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • • + CL5 2.5 - a s Low Noise Figure. NF = I.7dB, ¡S2ler = 15 dB f = 500MHz NF = 2.5dB, |S 2 le l 2 = 9-5dB (f = 1GHz)

2SC3763

Abstract: 2SD1267A 2SC3536 RT1N140C 2SC3691 2SC3855 3845 3844 3841 3843
Contextual Info: - 174 - a s tt Type No. « Manuf. m = SANYO JIC ^ TOSHIBA B ^ NEC B HITACHI í ± 3 FUJITSU tfi T MATSUSHITA 2SC 3828 K 2SC 3829 ífi T 2SC 3830 -y-VÍTV -y-V'TV 2SC3087 2SC2335 2SC3090 2SC3536 2SC 3832 ✓ 2SC3039 2SC2335 2SC2898 2SC3870 2SC 3833 -y-yry

sot-23 Marking Mb

Abstract: 2SC3098 S21E-2 Marking MB
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3098 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=2.5dB,|S21e|2=14.5dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

S21E

Abstract: S21E-2 2SC3099 nf smd marking
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3099 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=1.7dB,|S21e|2=15dB f=500MHz 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1

Contextual Info: Ordering number: EN1013C 2SC3090 NPN Triple Diffused Planar Silicon Transistor SANYO 500V/10Â Switching Regulator Applications J Features . High breakdown voltage Vq ^q^ 00V , . Fast switching speed. . Wide ASO. Absolute Maxi m « Ratings at Ta=25°C Collector-to-Base Voltage

MJE 813

Abstract: 2SC3099 SPICE2G6
Contextual Info: 2SC3099 SPICE2G6 model parameters 20010222 NET LIST .SUBCKT 2SC3099 1 2 3 CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LC 6 1 CC 1 3 CBC 1 2 Q1 6 5 + AREA = .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM + RE +

2SC3090

Abstract: 2SC309 npn 10a 800v 10A Switching Regulator
Contextual Info: JMnic Product Specification 2SC3090 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage VCBO≥800V ・Fast switching speed ・Wide ASO（Safe Operating Area） APPLICATIONS ・500V/10A Switching Regulator Applications

EN1013C

Abstract: 2SC3090
Contextual Info: Ordering number:EN1013C NPN Triple Diffused Planar Silicon Transistor 2SC3090 500V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · Fast switching speed. · Wide ASO. unit:mm 2022 [2SC3090] E : Emitter