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    2SC2712 Search Results

    2SC2712 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SC2712
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Datasheet

    2SC2712 Datasheets (89)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC2712
    Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original PDF 174.17KB 4
    2SC2712
    Kexin Silicon NPN Epitaxial Type Transistor Original PDF 168.92KB 3
    2SC2712
    Toshiba General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: General-purpose; Part Number: 2SA1162; DC Current Gain hFE, min: (min 70) (max 400); DC Current Gain hFE, max: (max 0.25); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max 50) Original PDF 146.39KB 5
    2SC2712
    Weitron Silicon NPN Transistors Original PDF 333.99KB 5
    2SC2712
    Unknown Transistor Substitution Data Book 1993 Scan PDF 36.78KB 1
    2SC2712
    Unknown The Japanese Transistor Manual 1981 Scan PDF 113.6KB 2
    2SC2712
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 141.97KB 1
    2SC2712
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 46.22KB 1
    2SC2712
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 76.13KB 1
    2SC2712
    Unknown Japanese Transistor Cross References (2S) Scan PDF 39.43KB 1
    2SC2712
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 155.63KB 1
    2SC2712
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 122.7KB 1
    2SC2712
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 112.26KB 2
    2SC2712
    Toshiba Transistor Silicon NPN epitaxial Type (PCT Process) Scan PDF 212.4KB 3
    2SC2712
    Toshiba TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS) Scan PDF 212.4KB 3
    2SC2712
    Toshiba NPN Transistor Scan PDF 230.75KB 4
    2SC2712
    Toshiba Super Mini Package (TO-236 / SOT-23) Transistors Scan PDF 61.33KB 1
    2SC2712-BL
    Toshiba 2SC2712 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Original PDF 265.63KB 5
    2SC2712-BL
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 76.13KB 1
    2SC2712BL
    Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF 230.73KB 4
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    2SC2712 Price and Stock

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    Toshiba America Electronic Components 2SC2712-BL(TE85L,F

    Transistor: NPN; bipolar; 50V; 150mA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 2SC2712-BL(TE85L,F 5,062 806
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    Quest Components 2SC2712-BL(TE85L,F 4,049
    • 1 $0.53
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    Luguang Electronic Technology Co Ltd 2SC2712

    Transistor: NPN; bipolar; 50V; 0.15A; 0.15W; SOT23
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    TME 2SC2712 4,858 20
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    Toshiba America Electronic Components 2SC2712-GR(TE85L,F

    Transistor: NPN; bipolar; 50V; 0.15A; 0.15W; SC59
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    TME 2SC2712-GR(TE85L,F 4,695 10
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    Verical () 2SC2712-GR(TE85L,F 9,000 981
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    2SC2712-GR(TE85L,F 48 48
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    Arrow Electronics () 2SC2712-GR(TE85L,F 237 1
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    2SC2712-GR(TE85L,F 66 1
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    Newark 2SC2712-GR(TE85L,F Bulk 1
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    Quest Components 2SC2712-GR(TE85L,F 7,238
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    EBV Elektronik 2SC2712-GR(TE85L,F 17 Weeks 3,000
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    Toshiba America Electronic Components 2SC2712-GR,LF(B

    Transistor: NPN; bipolar; 50V; 150mA
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    TME 2SC2712-GR,LF(B 2,652 1,985
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    Verical 2SC2712-GR,LF(B 2,652 2,174
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    Quest Components 2SC2712-GR,LF(B 2,121
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    Avnet Asia 2SC2712-GR,LF(B 28 Weeks 3,000
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    Toshiba America Electronic Components 2SC2712-O(TE85L,F)

    Transistor: NPN; bipolar; 50V; 150mA; 150mW; SOT346
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 2SC2712-O(TE85L,F) 2,122 806
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    Newark () 2SC2712-O(TE85L,F) Cut Tape 2,342 1
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    2SC2712-O(TE85L,F) Tape & Reel 2,342 100
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    Quest Components 2SC2712-O(TE85L,F) 4,982
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    EBV Elektronik 2SC2712-O(TE85L,F) 17 Weeks 3,000
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    2SC2712 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC3340

    Abstract: 2SA1324 2SC3339 2SC3426
    Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage


    OCR Scan
    o-236/sot-232sa116215new+92sc25322sc27142sc27152sc27162sc29962sc33402sa13242sc33392sc3426 PDF

    2sc2712

    Abstract: C 029 Transistor
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE


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    2sc2712150maot-23ot-323+72sc2712l2sc2712g2sc2712l-x-ae3-r2sc2712g-x-ae3-r2sc2712l-x-al3-r2sc2712g-x-al3-rc 029 transistor PDF

    Contextual Info: SILICON NPN EPITAXIAL TYPE TRANSISTOR 2SC2712 Unit in mm A U D IO FR EQUENCY GENERAL PURPOSE AM PLIFIER APPLIC A TIO N S High Voltage and High Current : Vq eo = 50V, Ic = 150mA Max. • Excellent hj’E Linearity : hfE (Iq = 0.1mA) / hpE (Ic = 2mA) =0.95 (Typ.)


    OCR Scan
    2sc2712150ma2sa1162-i-cl25 PDF

    2SC2712

    Abstract: C1000-BL 2SA1162 SC 1000 BL
    Contextual Info: 2SC2712 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2712 ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) •


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    2sc27122sa1162o-236modsc-59+2c1000-blsc 1000 bl PDF

    Contextual Info: 2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 1/4 12-Dec-2013 2SC2712 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Typ Unit Max ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage


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    2sc2712ot-2312-dec-201310vdc+110madc PDF

    TRANSISTOR BL 100

    Abstract: 2SC2712 3040d
    Contextual Info: 2SC2712 NPN Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES 3 Collector 1 Base *Power Dissipation PCM: 150 mW Tamb=25 oC 2 *Collector Current ICM: 150 mA A *Collector-Base Voltage


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    2sc2712ot-23100ma01-jun-2002+2transistor bl 1003040d PDF

    transistor toshiba marking hf

    Abstract: 2SA1162 2SC2712
    Contextual Info: 2SC2712 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2712 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V0EO-5OV, Ic = 150mA (Max.) Excellent hjpg Linearity : hFE (Ic = 0.1mA) / hFE (Ic = 2mA) = 0.95 (Typ.)


    OCR Scan
    2sc2712150ma2sa1162270hz+1transistor toshiba marking hf PDF

    2SA1162

    Abstract: 2SC2712 2SA1162 PNP
    Contextual Info: 2SA1162 PNP Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 3 FEATURES n n n n Collector 3 1 2 A RoHS Compliant Product Low noise : NF= 1dB Typ. ,10dB (Max.) Base L 3 Complementary to 2SC2712.


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    2sa1162ot-232sc2712-100ma+3-10ma01-jun-20022sa1162 pnp PDF

    2SC2712

    Abstract: 2SC2712GR 2SC2712-BL 2SC2712-GR 2SC2712-Y 2SC2712Y 2SA1162 2SC2712-O SOT 23 LY 2SC2712-GR LG
    Contextual Info: 2SC2712 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Low Noise: NF=1dB Typ. , 10db(Max.) Complements of the 2SA1162 A L 3 3 C B Top View CLASSIFICATION OF hFE


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    2sc2712ot-232sa11622sc2712-o+82sc2712-y2sc2712-gr2sc2712-bl100ma2sc2712gr2sc2712ysot 23 ly2sc2712-gr lg PDF

    2SC2712

    Abstract: 2SA1162 sot-23 Marking LG
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURE • Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    ot-232sc27122sa1162100ma+1sot-23 marking lg PDF

    2SC3258

    Abstract: 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SC4211 2SD667
    Contextual Info: - £ Type No. 2SC 3927 £ Manuf. ^ H B ft SANYO TOSHIBA -yy'ry 2SC3Q90 2SC4157 2SC 3928 = Ü 2SC2812 2SC2712 2SC 3929 / 2SC4211 2SC4116 2SC4211 2SC4211 2SC 3931 fé T fé T fé T fé T 2SC 3932 fé 2SC 3933 2SC4853 2SC 3935 fé T fé T fé T 2SC 3936 fé T


    OCR Scan
    2sc30902sc41572sc28122sc2712+142sc16232sc24632sd601a2sc2412k2sc42112sc41162sc32582sc39502sc320939182sc25622sc39582sc38742sd667 PDF

    Contextual Info: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712 Features • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating


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    2sa11622sc2712ot-2360vdc PDF

    MARKING W2 SOT23 TRANSISTOR

    Abstract: ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG
    Contextual Info: 2SC2712LT1 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA Max. Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.)


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    2sc2712lt1150maot-232sa1162+13600typ6614typ99221typ1102typmarking w2 sot23 transistorta 8268sot-23 transistor p2 markingmarking w3 sot23 transistorsot23 transistor marking p23543 amplifier2sc2712lmarking d4 npn sot23sot-23 marking lg PDF

    marking 12Y

    Abstract: 12y sot 23 2SA1037 2SC27 2SC2712 Collector 5v npn TRANSISTOR 12Y marking
    Contextual Info: 2SC2712 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to 2SA1037 Collector-current:Ic=100mA 2 Collector-Emiller Voltage:V CE =45V 1. 1.BASE 2.EMITTER 3.COLLECTOR High Totalpower Dissipation Pc=225mW High life And Good Linearity


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    2sc2712ot-232sa1037100ma+8225mw100mhz300us2sc27marking 12y12y sot 23collector 5v npn transistor12y marking PDF

    Contextual Info: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712 Features • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating


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    2sa11622sc2712ot-2360vdc PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1 2 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG


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    ot-232sa11622sc2712-100ma+1-10ma PDF

    Contextual Info: 2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2712 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)


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    2sc27122sa1162 PDF

    Contextual Info: MCC TM Micro Commercial Components 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • NPN Plastic-Encapsulate Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


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    2sc2712-o2sc2712-y2sc2712-gr2sc2712-bl+22sa1162ot-23 PDF

    Contextual Info: 2SC2712GT1G General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 • This is a Pb−Free Device http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc


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    2sc2712gt1gsc-592sc2712gt1/d PDF

    2SC2712GR

    Abstract: 2SC2712 2SC2712Y
    Contextual Info: MCC 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • Complementary to 2SA1162 x Case Material: Molded Plastic. UL Flammability


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    2sc27122sc2712-o2sc2712-y2sc2712-gr+52sc2712-bl2sa1162ot-232sc2712gr2sc2712y PDF

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    2sa11622sa11632sc18152sa1015+162sc24582sc24592sa10482sa10492sc27122sc271370h40transistor equivalent d20122sc734 equivalent3sk73 equivalent2sb5022sa776 bl2sc2075 equivalent2sk for low noise audio amplifier applications2sa970 bl equivalent2sa776 gr PDF

    2SC2712

    Abstract: 2SA1162
    Contextual Info: 2SC2712 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2712 ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) •


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    2sc27122sa1162o-236modsc-59 PDF

    Contextual Info: 2SA1162 PNP Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product SOT-23 A suffix of “-C” specifies halogen & lead-free A FEATURES    L 3 Low Noise : NF= 1dB Typ. , 10dB (Max.) Complementary to 2SC2712. Small Package


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    2sa1162ot-232sc2712-100ma+2-10ma22-oct-2009 PDF

    marking CJD

    Contextual Info: 2SC2712 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 2 7 12 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • + 0.5 2 .5 - t t 3 High Voltage and High Current : V0 EO = 5OV, 1(3 = 150mA (Max.) Excellent hpg Linearity


    OCR Scan
    2sc2712150ma2sa1162961001eaa2+1marking cjd PDF