2SC27 Search Results

2SC3378

Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184
Contextual Info: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current

Contextual Info: 2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2712 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)

A1145 transistor

Abstract: 2SA1145 A1145 toshiba A1145 2SC2705
Contextual Info: 2SA1145 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1145 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SC2705. • Small Collector Output Capacitance: Cob = 2.5 pF (typ.) • High Transition Frequency: fT = 200 MHz (typ.)

2SC2713

Abstract: 2SA1163
Contextual Info: 2SC2713 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2713 ○ 低周波増幅用 ○ 低周波低雑音用 単位: mm • 小型パッケージで小型機器の設計に適しています。 • 高耐圧です • 電流増幅率が高い。 : hFE = 200~700

2SC2715

Contextual Info: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for FM RADIO, MIX, CONV, OSC and IF amplifier . The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx.0.19g Absolute Maximum Ratings Ta = 25oC

transistor 2sc2785

Abstract: 2SC2785
Contextual Info: ST 2SC2785 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2787

Contextual Info: ST 2SC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

transistor Ic 1A

Contextual Info: 2SC2768 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers

2SC3499

Abstract: 2SC3531 2SC2320 3985 2SC3497 2sc2803 2SC3119 2SC2832 2sc1162 2Sc4692
Contextual Info: - 178 - « tt T y p e No. € Manuf. ® SANYO 2SC 3960 = L - 'J y 2SC 3961 2SC 3962 2SC 3963 y 2SC2832 2SC4205 2SC2816 2SC4026 2SC4205 2SD1609 2SC2803 2SC1162 2SC2497 2SD1694 2SC2482 2SC3209 ¿OV/i out ocMon i oc*r>i nnn \ ¿O^iU IV Vi/ 2SC3119 2SC2758

2SC3883

Abstract: 2N2250 S2000A 2N2222B 2N2244 STi-812 MRF239 2N2362 STI-801 2N2245
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, 2S01398 2S01402 2S01651 2S01655 2SC2791 2SC2793 2SC3214 2S01185 2S01186 SOT723 ~~6~~~0 15 20 2SC3322 SOT41303 SOT41303 SML41304 2SC3060 SOT41304 SOT41304 SML812 ~~t:~;05 25 30 OTS812 OTS812 OTS812

Contextual Info: MCC TM Micro Commercial Components 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • NPN Plastic-Encapsulate Transistors

2SC2786

Abstract: VCE-60 bf 328
Contextual Info: NEC D E S C R IP TIO N NPN SILICON TRANSISTOR 2SC2786 The 2SC 2786 is designed for use in FM RF amplifier and local PAC KAG E D IM E N S IO N S oscillator of FM tuner. in millimeters inches FE A T U R E S 4.2 MAX. • High gain bandwidth product ( f j = 600 M Hz TYP.

2SC2773

Contextual Info: SavantIC Semiconductor Product Specification 2SC2773 Silicon NPN Power Transistors DESCRIPTION •With MT-200 package ·High current capability APPLICATIONS ·For audio power amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SC2749

Abstract: npn transistors 400V 1A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2749 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High speed switching ·High VCBO ·Low saturation voltage APPLICATIONS ·For high voltage,high speed power switching applications PINNING

2SC2788

Contextual Info: SavantIC Semiconductor Product Specification 2SC2788 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN

2SC2716

Contextual Info: 2SC2716 T O S H IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2716 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. A M HIGH FREQUENCY AMPLIFIER APPLICATIONS. A M FREQUENCY CONVERTER APPLICATIOS. + 0.5 2 . 5 - I1 3 + 0.25 1 .5 -Q .l 5

S-AU80

Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors

DC 0509 C

Abstract: transistor 2sc2216 2SC2216
Contextual Info: 2SC2216,2SC2717 TO SHIBA 2SC2216, 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV FINAL PICTURE IF AM PLIFIER APPLICATIONS. &1M AX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hjrE. • M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: SILICON NPN TRIPLE OIFFUSED TYPE 2SC2792 INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE. SWITCHING APPLICATIONS. y 1S9MAX. HIGH SPEED DC-DC CONVERTER APPLICATION. 03£±as FEATURES : . Excellent Switching Times Iç=0.5A tr=1.0flS Max.

102 SE

Contextual Info: 2SC271 4 SIÜCQN NPN EPITAXIAL PLANAR TYPE t r a n s is t o r U nit in mm HIG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . FM , RF, M IX , IF A M P LIF IE R A PP LIC A T IO N S . FEATURES : • Small Reverse Transfer Capacitance: Cre = 0.7pF Typ. NF = 2.5dB (Typ.) ( f - 100MHz)

2Sj148

Abstract: 2sd1408 2SK364 2sc3281 2sc4793 2SK366 2SC3180N
Contextual Info: Power Amplifier Type No. Ic VcEO Pc fr NPN PNP A (V) (W) (MHz) 2SC2705 2SA1145 0.05 150 0.8 200 5 10m P.D 2SC1627A 2SA817A 0.4 80 0.8 100 10 10m P.D 2SC2235 2SA965 0.8 120 0.9 120 5 0.1 P.D D.O(3W) TYP Vce (V) * Application le (A) 2SC2236 2SA966 1.5 30 0.9

50m1n

Contextual Info: 1 TO-92MOD PACKAGE SER IES —3 L-SSTM IO to -X M CD > rS Ö H Application iy i n po >C Type No. NPN T V Video Out PNP (A) v CEO (V) (W) 150 0.8 2SC2229 2SA949 Audio Drive 2SC2705 2SA1145 T V Chroma Out 2SC3334 2SA1321 T V Sound Out 2SC2230 T V Sound Out

2SC2768

Contextual Info: Inchange Semiconductor Product Specification 2SC2768 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters

smd transistor LY

Abstract: lg smd transistor smd transistor marking BL smd transistor MARKING lg smd transistor marking LL smd transistor LL smd transistor NF smd marking ly smd Transistor LG smd marking LG
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 700 1 Low noise: NF = 1dB typ. , 10dB (max) 0.55 High hFE: hFE = 70 +0.1 2.4-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)