2SC27 Search Results

2SC3340

Abstract: 2SA1324 2SC3339 2SC3426
Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage

2SA1145

Contextual Info: 2SA1145 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. • • • Complementary to 2SC2705. Small Collector Output Capacitance : C0b = 2.5pF (Typ.) High Transition Frequency : f'r = 200MHz (Typ.) M A X IM U M RATING S (Ta = 25°C)

hp 2503

Abstract: 2SC2713
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2713 A U D I O FREQ UENC Y G E N E R A L A P P L IC A T IO N S PUR PO SE A M P L IF IE R Unit in mm + 0i5 2.5-0.3 + Û2 5 1.5— a 15 FEATURES : . High Voltage vCEO =120V Od . Excellent hpg Linearity +I ÊE- : hF E 0.1mA /hpE(2mA)=0.95(Typ.)

2SC2768

Contextual Info: JMnic Product Specification 2SC2768 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E 2SC2714 U nit in mm H IG H F R E Q U E N C Y A M P L IF IE R A P P L IC A T IO N S . F M , RF, M IX , IF A M P L IF IE R A P P L IC A T IO N S . +C12 5 1.3-015 FEATURES : • dd +l HO EE­ Small Reverse Transfer Capacitance: Cre = 0.7pF Typ.

2SC2216

Abstract: 2SC2717
Contextual Info: T O S H IB A 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 U nit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hpE- SYMBOL CHARACTERISTIC Collector-Base Voltage

2222J

Abstract: 2SC2707 2SA1147
Contextual Info: AOK AOK Semiconductor P roduct S pecification 2SA1147 S ilicon PNP Pow er T ransistors DESCRIPTION • W ith TO-3 package • High power dissipations • Complement to type 2SC2707 APPLICATIONS • For power switching amplifier and general purpose applications

2SC2738

Abstract: 25r-r
Contextual Info: PANASONIC INDL/ELEK -CIO 12E D • 1^35055 Q01Q4SS h Silicon NPN Triple Diffused Power Transistors r 33 os 2SC2738 NPN " TO-220 Package ) Absolute Maximum Ratings (Ta=25°G) ftem Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Collector Current

2sc2712

Abstract: C 029 Transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE

2SC2788

Contextual Info: Inchange Semiconductor Product Specification 2SC2788 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN

2SC2703

Contextual Info: 2SC2703 SILICON NPN EPITAXIAL TYPE PCT PROCESS A U D IO POW ER AMPLIFIER APPLICATIONS. • U n it in m m H ig h DC C u rre n t G ain : h p E = 1 00~ 320 M A X IM U M RATINGS (T a = 2 5 °C ) C H A RA CTERISTIC SYM BOL RATING U N IT C ollector-B ase V oltage

marking VA

Abstract: 2SC2776 marking va transistors
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2776 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

Contextual Info: SILICON NPN EPITAXIAL TYPE TRANSISTOR 2SC2712 Unit in mm A U D IO FR EQUENCY GENERAL PURPOSE AM PLIFIER APPLIC A TIO N S High Voltage and High Current : Vq eo = 50V, Ic = 150mA Max. • Excellent hj’E Linearity : hfE (Iq = 0.1mA) / hpE (Ic = 2mA) =0.95 (Typ.)

ic 5ma transistor

Abstract: RF POWER TRANSISTOR NPN 230MHZ VHF RF TRANSISTOR 2SC2736 CG transistor
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2736 DESCRIPTION •Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF~ VHF local oscillator, frequency converter. ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL PARAMETER

C2703

Abstract: 2SC2703
Contextual Info: 2SC2703 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2703 ○ 低周波電力増幅用 • 単位: mm 直流電流増幅率が高い。: hFE = 100~320 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧

2SC2751

Contextual Info: SavantIC Semiconductor Product Specification 2SC2751 Silicon NPN Power Transistors DESCRIPTION •With TO-3N package ·High voltage ,high speed · APPLICATIONS ·For use in high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1

2SA1170

Abstract: 2SC2774 RL4A
Contextual Info: SavantIC Semiconductor Product Specification 2SA1170 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation ·Complement to type 2SC2774 APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

2SC2715

Contextual Info: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 HIGH FREQUENCY AMPLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 FEATURES : • High Power Gain : Gpe = 2dB (Typ.) (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage.

1SV70

Abstract: 2SC2734 DSA003637
Contextual Info: 2SC2734 Silicon NPN Epitaxial ADE-208-1074 Z 1st. Edition Mar. 2001 Application • UHF frequency converter • Local oscillator, wide band amplifier Outline MPAK 3 1 2 Note: Marking is “GC”. 1. Emitter 2. Base 3. Collector 2SC2734 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: T O S H IB A 2SC2714 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2 S C 2 7 14 Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS FM, RF, MIX, IF AM PLIFIER APPLICATIONS • • + 0.5 2 .5 - 0 .3 Small Reverse Transfer Capacitance : Cre = 0.7pF (Typ.)

Contextual Info: 45E D • TOTTS-SD 0 0 1 7 0 1 1 = « T O S M TOSHIBA TRANSISTOR 2SC2712 SILICON PNP TRIPLE DIFFUSED TYPE TOSHIBA D I S C R E T E / O P T O ) AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES: • H i g h V o l t a g e a n d H igh Current.

Contextual Info: TOSHIBA 2SC2710 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2710 FOR AUDIO AM PLIFIER APPLICATIONS • High DC Current Gain : • Complementary to 2SA1150 U nit in mm 4.2M AX. hpE (i) = 100~320 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

Contextual Info: T O SH IB A 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 78 3 UHF BAND POWER AMPLIFIER APPLICATIONS • U n it in mm 1 8 .4 ± Q 5 Output Power : Po = 40W Min. (f= 470MHz, VCC = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC

Contextual Info: 2SC2713 TOSHIBA 2 S C2 7 1 3 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS + 0.5 2.5-0.3 High Voltage : V q e q = 120V Excellent hpj; Linearity : hpE (Ic = 0.1m A)/hpE (Iq = 2mA) = 0.95 (Typ.)