2SC249 Search Results

EAt-11

Abstract: 2SA1096 2SA1096A 2SC2497 2SC2497A
Contextual Info: Power Transistors 2SA1096, 2SA1096A 2SA1096, 2SA1096A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SC2497, 2SC2497A • Features • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S C 2497, 2S C 2497A

2SC2498

Contextual Info: TOSHIBA 2SC2498 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2498 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION MAXIMUM RATINGS Ta = 4.7 M A X . , 5.1 M A X 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage

Contextual Info: T O S H IB A 2SC2498 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2498 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATION . 5.1 M AX. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

2SC2491

Abstract: 2SC319B 2SC748 2sc2550 2SC306 2SC1740 2sc2061 2SC2926 2SC1398 2SC1687
Contextual Info: 84 - S S! tt T y p e No. 2SC 292 « Manuf. = $ SANYO Ü S TOSHIBA t b B NEC ÍL HITACHI Ä ± iï FUJITSU fâ T MATSUSHITA 'J—— 2SC2497 2SC 293 ' J —— 2SC2497A 2SC 294 S S 2 SC2497A 2SC 295 a a S * h m MITSUBISHI □ — A ROHM 2 SC2497A 2SC 296 |_±iS

Delco

Abstract: delco ic 180T2A 2SC1777 2N1556 2N5034 2N5035 180T2C MOTOROLA 2N1539 1405 Motorola
Contextual Info: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -

2SC2497A

Contextual Info: Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Contextual Info: Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC2497 and 2SC2497A 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector to emitter voltage

2N5034 package

Abstract: 2N5034 180T2A B0243A TO-219AA 2SC2491 sanken 2SC2825 2N5035 2SC1777 B0199
Contextual Info: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -

2SA1096

Abstract: 2SA1096A Jmnic
Contextual Info: JMnic Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2497/2SC2497A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

c2497

Abstract: 2SC2497A 2SA1096 2SA1096A 2SC2497 c2497a
Contextual Info: Power Transistors 2S C 2497, 2S C 24 97 A 2SC2497, 2SC2497A Silicon NPN Epitaxial Planar Type A F Pow er Amplifier C om plem entary Pair with 2 S A 1 0 9 6 , 2 S A 1 0 9 6 A • Features • High co liector-em itter voltage V c e o • TO-126 package, no insulator n eeded w hen fixing to a h e at sink

Contextual Info: 2SC2497 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)70 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.50 h(FE) Max. Current gain.220

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2497, 2SC2497A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA1096

Abstract: 2SA1096A 2SA109
Contextual Info: SavantIC Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Contextual Info: Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2497, 2SC2497A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2497, 2SC2497A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SC2498

Contextual Info: TO SH IBA 2SC2498 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2498 VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATION U nit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage Collector Current

2SA1096A

Abstract: 2SC2497A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1096A DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -60V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497A APPLICATIONS ·Designed for low-frequency power amplification

Contextual Info: 2SC2498 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2SC2497

Abstract: 2SC2497A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2497 2SC2497A Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1096/A ·High collector to emitter voltage VCEO APPLICATIONS ·For low-frequency power amplification PINNING

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2497, 2SC2497A Unit: mm 8.0+0.5 –0.1 3.2±0.2 Parameter Symbol

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2497, 2SC2497A Unit: mm 8.0+0.5 –0.1 M Di ain sc te on na tin nc

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC2498
Contextual Info: 2SC2498 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION. U n it in mm M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Em itter V oltage E m itter-B ase V oltage Collector C urrent

2SC2497

Abstract: 2SC2497A
Contextual Info: Inchange Semiconductor Product Specification 2SC2497 2SC2497A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1096/A ・High collector to emitter voltage VCEO APPLICATIONS ・For low-frequency power amplification

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A 2SA109
Contextual Info: Power Transistors 2 SA 1 0 9 6 , 2 S A 1096A 2SA1096, 2SA1096A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SC2497, 2SC2497A • Features • 5W output in com plem entary pair with 2SC2497, 2SC2497A • TO-126 package, no insulator n eeded when fixing to a heat sink