2SC227 Search Results

Contextual Info: T o s h i b a o i s c r e t e /o p t o } 9097250 T O S H IB A Sb DE^jj TOT72SD □DD7Slh 1 D IS C R E T E /O P T O > 33 - o 7 2SC2270 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS, Unit in nun MEDIMUM POWER AMPLIFIER APPLICATIONS. 7.9MAX.

2SC3197

Abstract: 2sc245b 2SC3198Y 2SC3198 2SC2309 2SC2458Y 2sc3114 2SC2274D 2SC2274E 2SC2274F
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Type No. c A) CBO ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SC2274D 100 80 5 0.6 .5 1 2SC2274E 100 80 5 0.6 .5 2SC2274F 100 80 5 0.6 2SC2274K 100 80 5 2SC2309

2SC2270

Contextual Info: Inchange Semiconductor Product Specification 2SC2270 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Low collector saturation voltage ·High collector power dissipation APPLICATIONS ·Strobo flash applications ·Medimum power amplifier applications

2sc2275

Abstract: 2SC2275A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2275 2SC2275A Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA985/985A ·High breakdown voltage APPLICATIONS ·For low frequency and high frequency power amplifer applicatons

2SA985

Abstract: 2sc2275
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA985 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2275 APPLICATIONS ·Audio frequency power amplifier applications

2SC1957

Abstract: 2SC2407A 2SC2407 2SC2314 toshiba 2SC1763 2SC2040 2SC2033 2SC2021 2SC-2021 K 2056
Contextual Info: - m € Type No. 2SC 2014 2SC 2017 2SC 2018 2SC 2020 2SC 2024 ^ ï¥ SANYO 2SC2274 □— A * . 2SC 2044 2SC 2051 2SC 2053 2055 2056 2057 ^ 2058 /' 2059 S 2060_ 36 2 TOSHIBA 2SD1090 m □ — A □— A 2SC 2061 2SC 2062 ' 2SC 2063 ^ □— A □— A □— A

transistor 2SC2271

Abstract: 2SC2271 2SC2271-E 2SC2271 Sanyo
Contextual Info: 2SC2271 SANYO SEMICONDUCTOR 2SC2271 NPN Triple Diffused Planar Type Silicon Transistor For Picture Output or Driver of H-Deflection Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current

2SA985

Abstract: 2sc2275 2SA985A
Contextual Info: JMnic Product Specification 2SA985 2SA985A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2275/2275A ・High breakdown voltage APPLICATIONS ・For low frequency and high frequency power amplifer applicatons PINNING

2SA984

Abstract: 2SC2274 TRANSISTOR 2SA984 transistor 2sc2274 2SA984 sanyo 2SC2274-F TR 2SA984-F
Contextual Info: Ordering number: EN465G 2SA984/2SC2274 N0.465G PNP/NPN Epitaxial Planar Silicon Transistors SAXYO AF Power Amp Applications Features • High breakdown voltage Vceo—50V . • High current (Ic = 500mA). • Low saturation voltage. ( ) : 2SA984 A bsolute Maximum R atings at T a = 25°C

KA 3264

Abstract: 2SC3136 2SD689 2SC3259 K 3264 2SC2456 2SC2482 2SC3019 2SD1431 2sc2371
Contextual Info: - 158 - s « Type No. tt £ Manuf. 2SC 3259 * S tS t c 2SC 3260 * ífM&TE 2SC 3261 „ « S Æ X SANYO X NEC B ÍL HITACHI ^ 2SC2555 2SC3322 fé T MATSUSHITA ✓ JE 2SC 3266 ✓ S 3£ 2SD1246 2SC 3267 * $ 2SD1246 2SC 3268 3t $ 2SD1295 □- A 2SC2271 □- A

Z5C-15

Abstract: 2SC2270 AC46C
Contextual Info: T o s h i b a o i s c r e t e /o p t o j 9097250 T O S H IB A it DE^jj T 0 T 7 E S D C D IS C R E T E / O P T O □□□751t 0 7 1'T~~ 2SC2270 SI L1CON NPN E P IT A X IA L TYPE PCT PROCESS) STROBO FLASK APPLICATIONS, Unit in mm MEDIMUM POWER AMPLIFIER APPLICATIONS.

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. 2SC2274D VCBO ^CEO (V) (V) Min Min 100 80 Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) ^EBO (V) Min 5 (W) 'c (A) 0TC=25°C 0.6 0.5 hFE 'cBO 'ces V CE (HA) 9 (V) GiA) 0 (V)

2SC2270

Contextual Info: SavantIC Semiconductor Product Specification 2SC2270 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Low collector saturation voltage ·High collector power dissipation APPLICATIONS ·Strobo flash applications ·Medimum power amplifier applications

TL 2262

Abstract: 2SC2279 te 2304 2257A 2SC2050 2SC2371 2SC2611 2SD467 2sc710 2SC1815
Contextual Info: - J tt tö T fö T M anuf. € = W SANYO 2SC3416 • y'V irV y-yj-y ■y-ytry te T jä T 0 tL 0 tL S 2: 2SC1570 2SD400 2SD826 = # 0 V h a n s B m B ^ 0 tL K $ 2SC2274 2SC1755 2SC1755 CII m s s T ype No. 2SC 2257A 2SC 2258 2SC 2260 J 2SC 2261 ✓ 2SC 226 2 —2SC 2263

2SC1216

Abstract: sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2SC2320L 2sc1162
Contextual Info: - 11 2 - ñ £ tt Type No. * 2SC 1343 H B 2SC 1344 B 2SC 1345 B 2SC 1345K « Manuf. a & h TOSHIBA 2SC1570 2SC732TM 2SC1842 2SC1570 2SC732TM 2SC1843 2SC2001 ÍI ÍL ÎL íL m b SANYO NEC 2SD734 2SC3419 * 2SC 1347 fé T 2SC2274 2SC3419 * 2SC 1354 fé T * 2 SC 1358

2SA985

Abstract: 2SA985A 2sc2275
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION •With TO-220 package ·Complement to type 2SC2275/2275A ·High breakdown voltage APPLICATIONS ·For low frequency and high frequency power amplifer applicatons

A984

Abstract: c2274 C2274 E transistor c2274 A984k C2274K 2SC2274 2SA984 VCEO50 transistor 2sc2274
Contextual Info: 2SA984, 984K 2SC2274, 2274K 465F f “ ill PNP/npn E p ita x ia l Planar S ilic o n T ransistors 2 0 03 A Low Frequency Power Amp Applications Features . High breakdown v o l t age V c e o = 5 0 / 8 0 V . . High current (Ic=500mA). . Lo w saturation voltage.

2SC2270

Abstract: AC46C 072G
Contextual Info: 2SC2270 SILICON NPN EPITAXIAL TYPE PCT PROCESS STROBO FLASH APPLICATIONS, Unit in mm MEDIMUM POWER AMPLIFIER APPLICATIONS. 7.9 MAX FEATURES: o £3.1 La i 5 • High DC Current Gain ! h p E - U O ^ S O (Vc e =2V, Ic =0.5A) hpE=7° (Min.)(Vc e =2V, Ic =4A)

Contextual Info: 2SC2274 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)600m @I(C) (A) (Test Condition)400m

transistor 2sc2274

Abstract: 2SC2274 2sc2274e 2SC2274F 2SC2274-F 2SC2274 E, K 2SC2274-D 2SC2274-E 2SC2274 transistor
Contextual Info: 2SC2274 0.5 A , 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High Breakdown Voltage  High Current  Low Saturation Voltage TO-92 G H Emitter

2sc2275

Abstract: 2SC2275A
Contextual Info: Inchange Semiconductor Product Specification 2SC2275 2SC2275A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA985/985A ・High breakdown voltage APPLICATIONS ・For low frequency and high frequency power amplifer applicatons

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2274 TRANSISTOR NPN 1. EMITTER FEATURES z High Breakdown Voltage z High Current z Low Saturation Voltage 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC2271

Abstract: transistor 2SC2271 2SC3468 JIS G3141 b1111 b1252 TRANSISTOR
Contextual Info: SANYO SEMICONDUCTOR CORP 1 2 E I 2SC2271 h I 7 = n 7 a it, a o o m s? i j ~ ^T-3 I ' ä 3 N P N Triple D iffu se d P lan a r S ilic o n T ra n sisto r 2006A Chroma Output, Horizontal Deflection Driver Applications 493E . Small-sized color TV chroma use and B/W TV, color T V horizontal deflection

2SC2259

Abstract: 2SC2283-MA 2sc2238 2SC2246 2SC2283 2sc2233 2sc2284 2SC2273 2SC2272 2SC2237
Contextual Info: - 118 - Ta=25eC. *ÉPÍáTc=25T5 m & 2SC2228Y 2SC2229 2SC223Ö 2SC2230A 2SC2233 2SC2235 2SC2236 2SC2237 2SC2238 2SC2238A 2SC2238B 2SC2240 2SC2242 2SC2243 2SC2244 2SC2245 2SC2246 2SC2247 2SC2250 2SC2258 2SC2259 2SC2271 2SC2272 2SC2273 2SC2274 2SC2274K 2SC2275