2SC1317 TRANSISTOR Search Results

2SA720

Abstract: 2SA719 2SC1317 2SC1318 transistor 2sa720
Contextual Info: Transistor 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 Unit: mm 5.0±0.2 Complementary pair with 2SC1317 and 2SC1318. Parameter Ta=25˚C Symbol Collector to

2SC1318 transistor

Abstract: 2SA0719 2SA0720 2SA719 2SA720 2SC1317 2SC1318 SC-43A 2SC1317 transistor
Contextual Info: Transistor 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 4.0±0.2 5.1±0.2 5.0±0.2 • Complementary pair with 2SC1317 and 2SC1318.

2SA0719

Abstract: 2SC1317
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0719 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317 • Package  Complementary pair with 2SC1317 

2SA720

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0719, 2SA0720 (2SA719, 2SA720) Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2

2sa72

Abstract: 2SA0719 2SA0720 2SA719 2SA720 2SC1317 2SC1318 SC-43A MA2401
Contextual Info: Transistors 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features Symbol Rating Unit VCBO −30

2SC1318

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 and 2SA0720 4.0±0.2 5.1±0.2 5.0±0.2

2SA0719

Abstract: 2SA719 2SC1317 XN04602
Contextual Info: Composite Transistors XN04602 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.50+0.10 –0.05 • 2SA0719 (2SA719) + 2SC1317 Tr1 Symbol Rating Unit Collector to base voltage

2SC1318 transistor

Abstract: 2SC1317 2SC1318 2SC1317 transistor 2SA0719 2SA0720 2SA719 2SA720
Contextual Info: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA0719 2SA719 and 2SA0720 (2SA720) Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0719 and 2SA0720.

2sC1317 transistor

Abstract: 2SC1318 2SC1318 transistor 2SC1317 2SA0719 2SA0720 2SA719 2SA720 SC-43A
Contextual Info: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 2SA719 and 2SA0720 (2SA720) 4.0±0.2 5.1±0.2 5.0±0.2 • Absolute Maximum Ratings Ta = 25°C

transistor 2sa720

Contextual Info: Transistor 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 Unit: mm 5.0±0.2 5.1±0.2 • Features Symbol Collector to 2SA0719 base voltage

2SC1317

Abstract: 2SC1318 2SA0719 2SA0720
Contextual Info: Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 and 2SA0720 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE sat • Complementary pair with 2SA0719 and 2SA0720

2SC1318

Abstract: 2SC1317 transistor 2SC1317
Contextual Info: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE sat . Complementary pair with 2SA719 and 2SA720.

2SC1318F

Abstract: 2SC1317 2SA0719 2SC1318 2SC1318P
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1317 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0719 • Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Transistors 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features

2SC1318

Abstract: 2SC1317 2SA720 2SA719 2sc131
Contextual Info: Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planer type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.2 • Features 0.7±0.1 13.5±0.5 • Low collector to emitter saturation voltage VCE sat

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0719 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317 • Package M Di ain sc te on na tin nc ue e/ d  Features

2sc1815 equivalent

Abstract: 2SC1312 equivalent of transistor 8050 equivalent of transistor 9014 NPN 2SC1740 equivalent transistor bc 549 equivalent transistor 2sc1312 transistor bc 549 BC337 8050
Contextual Info: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC1214 HN / BC 337 / 8050 2SC1478 HN / BC 548 / 9014 2SC1707 HN / BC 548 / 9014 2SC1219 HN / BC 337 / 8050

2SB1446

Abstract: 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632
Contextual Info: •Silicon Small Signal Transistors # General-use Low Frequency Amplifiers and Others Package No. SS-Mini Type (D1 ) S-Mini Type (D5) I 2SB1462 ' 2SB1218A . 2SD2216 2SD1819A : 2SB1219/A i 2SD1820/A i 2SA1791 i 2SC4656 Mini Type (D12) New S Type (034) ! 2SB709A

2SC1072

Abstract: 2SA713 2SC1328 2SC1318T 2sc1162 2SC1346 138B 2SC1317 2SC1318 2SC1327
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01602 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 1 (0.65) 0.30+0.10 –0.05 • Basic Part Number

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01602 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 1 (0.65) 0.30+0.10 –0.05 • Basic Part Number

2SA719A

Abstract: 2SC1317 XN01602
Contextual Info: Composite Transistors XN01602 Silicon PNP epitaxial planar type Tr1 Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 1 (0.65) 0.30+0.10 –0.05 • Basic Part Number Parameter Tr2 Overall 1.1+0.2 –0.1 Symbol

2SA719A

Abstract: 2SC1317 XN01602 2SA0719A 2SA71
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01602 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01602 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/