2SC 141 AN Search Results

NEC 2561

Abstract: NEC 2581 nec 2565 2565 nec 2SC2564 2SC2320 NEC 2562 2581 NEC 2561 nec 2SC237
Contextual Info: - 3 . n SANYO m ±L H IT A C H I □ — h. tt 2SC 2552 ^ 3fC S 2SC3038 2SC2333 ¿5b¿Oi¿ 2SC2738 2SC3968 2SC 2 553 / & 2SC3039 2SC2335 2SC2613 2SC2739 2SC4205 2SC2749 2SC3365 2SC2841 € TO SH IBA 2SC 2 5 5 5 " - ' NEC 2SC 2556-.- tó T 2SA505 2SC2690 2SC 2557

TRANSISTOR BC 157

Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor
Contextual Info: 2SC D • û23SbOS 0004100 T_«SIE<S^ PNP Silicon Transistors SIEMENS . AKTIENGESELLSCHAF B c160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as

TRANSISTOR BC 137

Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
Contextual Info: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case

transistor A495

Abstract: r107c K5010 BF187 A495 2N3633 2SC622 BC131 BFS29P J BF214
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

TRANSISTOR BC 137

Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
Contextual Info: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.

Transistor BFr 99

Abstract: Transistor BFR 96 transistor 2sc 548
Contextual Info: 2SC D .- . • . - , -„-,r— - . .» - - 1— — -. -■ ~. fl235bOS QQQMbbS 3 M S I E G T-V-fcJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIEN6ESELLSCHAF T -j-— BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed

2SC1253

Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
Contextual Info: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for

transistor A495

Abstract: a495 transistor 2N3633 FET K5010 2SC622 BFS29P transistor BC131 BC129 transistor bf214 TC236
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

NE24600

Abstract: NE24620 2SC2952 2SC2953 NE24615
Contextual Info: SEC N E C / CALIFORNIA SbE D Li4274m 00G237S Tbl « N E C C " 1 7 3 5 -0 5 NE24600 NE24615 NE24620 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • E X C E L L E N T IM DISTO RTIO N C H A R A C T E R IS T IC S A T HIG H O U T P U T LEV E LS :

2SC640

Abstract: 2N3633 2SC658 bc130 2SC622 BF215 BC155 2n1613 replacement D4D24 transistor A495
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2sc 1416 y

Abstract: 2SA1352 2SC3416 2SA13
Contextual Info: Ordering n u m b e r:EN 141 IC 2SA1352/2SC3416 N0.1411C PNP/NPN Epitaxial Planar Silicon Transistors High-Defînition CRT Display Video Output Applications Applications • Color TV chroma output, high-voltage driver applications Features • High breakdown voltage : Vceo = 200V.

Contextual Info: 2SA1418 / 2SC3648 Ordering number : EN1788B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1418 / 2SC3648 High-Voltage Switching, Preriver Applications Applications • Color TV audio output, inverter. Features • • •

2SA1418

Abstract: 2SC3648 ITR03558 2SC36 V8141
Contextual Info: 2SA1418 / 2SC3648 Ordering number : EN1788B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1418 / 2SC3648 High-Voltage Switching, Preriver Applications Applications • Color TV audio output, inverter. Features • • •

Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.

2SA13

Abstract: 2SC 141 AN 2SA1352 2SC3416
Contextual Info: O r d e rin g n um be r: EN 141 IC 2SA1352/2SC3416 PNP/NPN Epitaxial Planar Silicon Transistors Ultrahigh-Definition CRT Display Video Output Applications Applications • Color TV chroma output, high-voltage driver applications Features • High breakdown voltage : Vceo = 200V.

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> U M „orice- M GFC39V4450A * * * * *«« i! 4 . 4 —5 .0 G H z BAND 8 W INTERNA LLY M ATCHED GaAs FE T DESCRIPTION OUTLINE DRAWING T h e M G F C 3 9 V 4 4 5 0 A is an internally im p e d a n c e -m a tc h e d Unit millimeters linches

2sd 5023

Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 42V 6472 6 .4 —7.2G Hz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC42V6472 is an internally impedance-matched GaAs power FET especially designed fo r use in 6.4 ~ 7.2 GHz band amplifiers. The herm etically sealed metal-ceramic

ABE 422

Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
Contextual Info: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

Contextual Info: T R I Q U I N T S E M I C O N D U C T 0 R , I N C T O S I W I R E L E S S C O M M U N I C A T I O N S TQ9132 50 mWDriver Amplifier Co Co Features The TQ9132 Amplifier is part of TriQuint's RFIC Building Block family. It is an 800 2500 MHz amplifier capable of providing moderate output power 50 mW for a wide

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-8 Internally Matched Power GaAs FETs C-Band Features • High power - P-iob = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 4.9 GHz to 5.1 GHz • High gain - G1dB = 10.0 dB at 4.9 GHz to 5.10 GHz • Broad band internally matched • Hermetically sealed package

2SA1175

Abstract: TRANSISTOR 2SA1175 2SC2785 HFG TRANSISTOR
Contextual Info: NEC PNP SILICON TRANSISTOR 2 S A 1 175 D E S C R IP TIO N The 2S A 1 175 is designed for use in driver stage of A F amplifier. PAC KAG E D IM E N S IO N S in millimeters inches FEATURES • High hpE and excellent linearity 2.2 M AX. (0.086 M AX.) 4.2 M AX.