2SB185
Abstract: 2SB187 2sb22 2sb186 2sb303 2sb342 2SB375A 2SB273
Contextual Info: 3 O g 03 Electrical Characteristics/Ta=25°C Absolute Maximum Ratings/Ta=25°C Vc' bo Veto t VfEH Vkbh I, P, «L I kbo 1<BC> Ve« max VKB max VcK I, - 100- 560 6 lm 110 10 2.2 60- 320 10 10m 130 10 3.2 20 15 /i 6 12/1 1.5 100m - 67-330 - - - - - i : With
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2sa101925a10472sb222sb375a+82sb3902sb3912sb1852sb1872sb1862sb3032sb3422sb273
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GT123
Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT
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npn110nkt103nkt106nkt109+142000nnkt123nkt1292g395gt1232n23422sb123 transistorad166st6152sc180dts1052n2342n2352n285
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AD166
Abstract: 434m 2SB424 KJ2000 KL8503 LT5054 LT5087 2N353 LT5080 TI368
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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npn110lt5081100ktlt5082+13lt5083lt5084lt5085ad166434m2sb424kj2000kl8503lt5054lt50872n353lt5080ti368
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AD166
Abstract: at08a LT5079 2N463 LT5054 2N1435 s5 100 b101 t027 2N66 b10474
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn110lt5081100ktlt5082+13lt5083lt5084lt5085ad166at08alt50792n463lt50542n1435s5 100 b101t0272n66b10474
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2sb341
Abstract: 2SB331 2SB400 2SB328 2SB337 2SB383 2SB382 2SB381 st6220 programmer 2SB367 2SB324
Contextual Info: Absolutes maximum ratings Electrical characteristics Ta=25ºC (Ta=25ºC) PartNumber VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob (V) (V) (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) 35W 2SB301 -60 -1 75 60 -1.5 -5A 10A (Tc=25ºC) 2SB302 -10 -5 -2 40 85
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2sb3012sb3022sb3032sb304+162sb304a2sb3062sb3092sb3102sb3112sb3122sb3412sb3312sb4002sb3282sb3372sb383 2sb3822sb381st6220 programmer2sb3672sb324
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AD166
Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT
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ad1662sb123 transistor2n1434asz16+1lt5085
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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ls 2027 audio ampecg transistor replacement guide book free2sb337transistor replacement guide+6980510s95102sb508c248507722n339bc149c
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10db2p10db4p10db6p180b6a+10t35wtransistor kt 606a65e9 transistorsr 6863 d2sc965cs9011sr1k diodekt850transistor st25atransistor 130001 8d
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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sylvan58mc09a001-0066x0003-00150746a+1568x000368x0003-001t-e013793b3-393b3-4st178diode e1110ck705ecg semiconductor replacement guidecs1237me1120te10881n9421n733adelco dtg-110b transistor
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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tht404zv15azy33azt696+16zv15bzy33bzt697zt706zv27azy62atriac zd 607hep c60042sb5042sc 968 npn transistorsje 607motorola c6004diode by127 specificationsk872af118motorola semiconductor hep c3806p
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