2SB165 Search Results

2SB1657

Contextual Info: Inchange Semiconductor Product Specification 2SB1657 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・For audio frequency amplifier and switching applications PINNING

2SB1657

Contextual Info: JMnic Product Specification 2SB1657 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION

2SB1658

Contextual Info: SavantIC Semiconductor Product Specification 2SB1658 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For audio frequency amplifier and switching applications PINNING PIN

2SB1657

Contextual Info: SavantIC Semiconductor Product Specification 2SB1657 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For audio frequency amplifier and switching applications PINNING PIN

LE50

Abstract: 2SB1370 2SB1565 2SB1655 B303
Contextual Info: 2SB1370 2SB1655/ 2SB1565 Transistors I Power Transistor 60V, —3A 2S B 1370 • A b s o l u t e m a x im u m r a tin g s •F e a tu re s 1 ) Low saturation voltage, typically VcE(sat) = — 0 . 3 V at le / Ib = —2A / - 0 .2 A . 2 ) Excellent DC curre nt gain characteristics.

2SD2589

Contextual Info: 7 0Ω E 2SB1659 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589) Conditions Ratings Unit V ICBO VCB=–110V –100max µA VCEO –110 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –110min V IC –6 A hFE VCE=–4V, IC=–5A

Contextual Info: 2SB1658 Plastic-Encapsulate Transistors PNP Features TO-126 Power dissipation PCM: 1 W Tamb=25℃ Collector current ICM: -5 A Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE

2SB1655

Abstract: 2SD2394
Contextual Info: Inchange Semiconductor Product Specification 2SB1655 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide area of safe operation ・Complement to type 2SD2394

B1370

Abstract: B1565 2SB1370
Contextual Info: 2SB1370 2SB1655/ 2SB1565 Transistors I Power Transistor —60V, —3A 2S B 13 70 • A b so lu te maximum ratings ( T a = 25‘C ) • F eatu res 1) 2 ) 3} 4) L ow VcE(sat). (Typ.— 0 .3 V at Ic /Ib “ “ ’2/— -0.2A) Excellent D C current gain characteristics.

Contextual Info: Power Transistors 2SB1653 Silicon PNP triple diffusion planar type For power switching Unit: mm ● ● High collector to emitter VCEO Low collector to emitter saturation voltage VCE sat Allowing automatic insertion with radial taping 90° 2.5±0.1 ● 10.8±0.2

2sb1658

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB1658 TRANSISTOR PNP TO-126 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current -5 A ICM: Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range

2SB1653

Contextual Info: Power Transistors 2SB1653 Silicon PNP triple diffusion planar type For power switching M Di ain sc te on na tin nc ue e/ d Unit: mm ● • Absolute Maximum Ratings 10.8±0.2 TC=25˚C Ratings Unit –400 V –400 V –7 V –1 A VCBO VCEO Emitter to base voltage

Contextual Info: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA

2SB1653

Contextual Info: Power Transistors 2SB1653 Silicon PNP triple diffusion planar type For power switching Unit: mm ● ● 10.8±0.2 ● High collector to emitter VCEO Low collector to emitter saturation voltage VCE sat Allowing automatic insertion with radial taping 90° 2.5±0.1

Contextual Info: Transistor 2SB1651 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 0.8 0.15 14.5±0.5 0.65 max. +0.1 0.45–0.05 Ta=25˚C ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la

2SB1651

Abstract: Low-Frequency Low-Noise PNP transistor
Contextual Info: Transistor 2SB1651 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm 0.8 0.15 14.5±0.5 0.65 max. +0.1 0.45–0.05 Ta=25˚C 2.5±0.5 2.5±0.5 +0.1 • Absolute Maximum Ratings 1.0 ● Low noise voltage NV. High foward current transfer ratio hFE.

2SB1370

Abstract: 2SB1565 2SB1655
Contextual Info: Transistors 2SB1370 2SB1655 / 2SB1565 94L-411-B303 (94L-456-B349) 319

IE5A

Abstract: Transistor 2Sd2589 2SD2589 2SB1659
Contextual Info: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA

2SB1658

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1658 DESCRIPTION •High Collector Current -IC= -5A ·High DC Current Gain: hFE= 150~600@IC= -1A ·Low-Collector Saturation Voltage: VCE sat = -0.15V(Max.)@IC= -1A APPLICATIONS

2SB1655

Abstract: 2SD2394
Contextual Info: JMnic Product Specification 2SB1655 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide area of safe operation ・Complement to type 2SD2394 PINNING PIN

2SB1658

Contextual Info: Inchange Semiconductor Product Specification 2SB1658 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・For audio frequency amplifier and switching applications PINNING

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB1658 TRANSISTOR PNP TO – 126 FEATURES z Low VCE(sat) z High DC Current Gain 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: Transistors 2SB1370 2SB1655 / 2SB1565 94L-411-B303 (94L-456-B349) 319 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

2SB1651

Contextual Info: Transistor 2SB1651 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm 0.8 0.15 14.5±0.5 0.65 max. +0.1 0.45–0.05 Ta=25˚C 2.5±0.5 2.5±0.5 +0.1 • Absolute Maximum Ratings 1.0 ● Low noise voltage NV. High foward current transfer ratio hFE.