2SB156 Search Results

2SB1562

Contextual Info: 2SB1562- SILICON PNP EPITAXIAL TYPE DARLINGTON POWER POW ER AM PLIFIER APPLICATIONS • • U n it in m m High DC Current Gain. : hFE = 300~1000(V cE =-5V , Ic = -0 .5 A ) Low Collector Saturation Voltage. : VCE (sat) = -0.5V (TYP.) (IC = -2A , IB = -20mA)

2SB1565

Abstract: 2SD2394
Contextual Info: JMnic Product Specification 2SB1565 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide SOA safe operating area ・Complement to type 2SD2394 PINNING PIN

2SB1565

Abstract: 2SD2394
Contextual Info: SavantIC Semiconductor Product Specification 2SB1565 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SD2394

2SD2390

Abstract: 2SB1560 HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2390 DESCRIPTION •With TO-3PN package ·Complement to type 2SB1560 ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION

2SB1568

Abstract: 2SD2399
Contextual Info: SavantIC Semiconductor Product Specification 2SB1568 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2399 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications

2SB1566

Abstract: 2SD2395
Contextual Info: SavantIC Semiconductor Product Specification 2SB1566 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SD2395

2SB1567

Abstract: 2SD2398
Contextual Info: SavantIC Semiconductor Product Specification 2SB1567 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2398 ·High DC current gain. ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION

LE50

Abstract: 2SB1370 2SB1565 2SB1655 B303
Contextual Info: 2SB1370 2SB1655/ 2SB1565 Transistors I Power Transistor 60V, —3A 2S B 1370 • A b s o l u t e m a x im u m r a tin g s •F e a tu re s 1 ) Low saturation voltage, typically VcE(sat) = — 0 . 3 V at le / Ib = —2A / - 0 .2 A . 2 ) Excellent DC curre nt gain characteristics.

2SB1561

Abstract: 2SD2391 T100
Contextual Info: 2SB1561 Transistors Medium Power Transistor −60V, −2A 2SB1561 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage , typically VCE (sat) = −0.15V at IC / IB = −1A / −50mA. 2) Collector-emitter voltage = −60V 3) Pc = 2W (on 40x40×0.7mm ceramic board).

2SB1567

Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1567 Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo=-100V(Min) • High DC Current Gain-

2SB1565

Contextual Info: 2SB1565 Transistors Power Transistor −60V, −3A 2SB1565 !External dimensions (Units : mm) !Features 1) Low VCE(sat). (Typ.−0.3V at IC/IB = −2/−0.2A) 2) Excellent DC current gain characteristics. 3) Wide SOA (safe operating area). 10.0 4.5 2.8 8.0

100M200M

Abstract: 2SB1561 2SD2391 T100
Contextual Info: Medium Power Transistor −60V, −2A 2SB1561 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) = −0.15V at IC / IB = −1A / −50mA. 2) Collector-emitter voltage = −60V 3) Pc = 2W (on 40400.7mm ceramic board).

Contextual Info: 2SB1568 Transistor, PNP, Features Dimensions Units : mm • available in T 0 -2 2 0 FN package • Darlington connection provides high dc current gain (hFE) 2SB1568 (TO-220 FN) • damper diode is incorporated • built in resistors between base and emitter

2sb1569a

Abstract: transistor 2sb1569A
Contextual Info: h 7 > y X $ / T ransistors 2 S B 1 5 6 9 2SB1569A X t° $ * y 7 J1,7° Is - 1 M PNP y U □ > h 7 > y 7 $ Epitaxial Planar PNP Silicon Transistor 15;üîJ£ï :ft*SlÎ ïffl/L o w Freq. Power Amp. A • \l'ii0 ,/D im e n s k n s Unit : mm) 1) ¡SHEET’ i > 3 „

B1370

Abstract: B1565 2SB1370
Contextual Info: 2SB1370 2SB1655/ 2SB1565 Transistors I Power Transistor —60V, —3A 2S B 13 70 • A b so lu te maximum ratings ( T a = 25‘C ) • F eatu res 1) 2 ) 3} 4) L ow VcE(sat). (Typ.— 0 .3 V at Ic /Ib “ “ ’2/— -0.2A) Excellent D C current gain characteristics.

2SB1566

Abstract: 2SD2395
Contextual Info: JMnic Product Specification 2SB1566 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide SOA safe operating area ・Complement to type 2SD2395 PINNING PIN

2SB1566

Abstract: 2SD2395 TO220FN
Contextual Info: 2SB1566 Transistors For Power Amplification −60V, −3A 2SB1566 zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Low VCE (sat). 2) Wide SOA. 12.0 10.0 0.8

2SB1569

Abstract: 2SD2400
Contextual Info: Inchange Semiconductor Product Specification 2SD2400 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1569 ・High transition frequency ・Collector power dissipation: PC=20W TC=25℃ APPLICATIONS ・For low frequency power amplifier

Contextual Info: 2SB1561 Datasheet PNP -2.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2.0A MPT3 Base Collector Emitter 2SB1561 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2391 3) Low VCE(sat) VCE(sat)= -0.35V(Max.)

D2395

Contextual Info: 2SB1566 2SD2395 Transistors Power Transistor —60V, —3A 2SB1566 I # Features # Absolute maximum ratings (Ta=25'C ) '1 ) Low Vce(sm>. (T yp .—0.3V at Ic /Ib » — 2 J — 0 .2A ) 2 ) W ide S O A (safe ope ratin g area). 3 ) C om plem ents th e 2S D2395.

2sb1569a

Contextual Info: 2 S B 1 27 5 / 2 S B 1 2 3 6 A / 2 S B 1 5 6 9 A / 2 S B 1 186A Transistors 2 S D 2 2 1 1 / 2S D 1 9 1 8 / 2S D 1 8 5 7 A / 2 S D 24 00A / 2S D 17 63A I Power Transistor — 160V, —1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te maximum ratings ( T a = 2 5 t )

Contextual Info: !j£ii£iyfj ^EmL-dondactoi ^-Pioduati, One. \~s TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1569 Silicon PNP Power Transistor DESCRIPTION 2 • Collector-Emitter Breakdown Voltage:V(BR)CEo=-120V(Min)

2SD2400

Abstract: 2SB1569
Contextual Info: SavantIC Semiconductor Product Specification 2SD2400 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1569 ·High transition frequency ·Collector power dissipation: PC=20W TC=25 APPLICATIONS ·For low frequency power amplifier

2SB1560

Abstract: 2SD2390 PNP IC 7A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1560 DESCRIPTION •With TO-3PN package ·Complement to type 2SD2390 APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to