2SB1132 TRANSISTOR Search Results

Contextual Info: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SB1132; B A *, where ★ is hFE code 2SB1132 (MPT3) . , +0.2 *•5—0.1 1.6±0.1 • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB)

2sB1237 transistor

Abstract: 2SB1237 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100
Contextual Info: 2SB1132 / 2SA1515S / 2SB1237 Transistors Medium Power Transistor −32V,−1A 2SB1132 / 2SA1515S / 2SB1237 zExternal dimensions (Unit : mm) 2SB1132 4+ − 0.2 1.0 + − 0.2 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. „ FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) „ ORDERING INFORMATION

2SB1132G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. „ FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) „ ORDERING INFORMATION

2sb1132

Abstract: 2SB1132-Q
Contextual Info: MCC TM Micro Commercial Components Features 2SB1132 2SB1132-P 2SB1132-Q 2SB1132-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# x Case Material: Molded Plastic. Classification Rating 94V-0

2SB1132Q

Contextual Info: MCC TM Micro Commercial Components 2SB1132 2SB1132-P 2SB1132-Q 2SB1132-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

Contextual Info: MCC TM Micro Commercial Components 2SB1132-P 2SB1132-Q 2SB1132-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates • •

rohm 2sd1664

Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

Contextual Info: UTC 2SB1132 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES *Low VCE sat . VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA) 1 TO-252 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

Contextual Info: UTC 2SB1132 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *Low VCE sat .VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA) SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

Contextual Info: UTC 2SB1132 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *Low VCE sat .VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA) SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

2SB1132R

Contextual Info: MCC TM Micro Commercial Components 2SB1132-P 2SB1132-Q 2SB1132-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

Contextual Info: MCC TM Micro Commercial Components 2SB1132-P 2SB1132-Q 2SB1132-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

Contextual Info: MCC TM Micro Commercial Components 2SB1132-P 2SB1132-Q 2SB1132-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates • •

smd transistor marking br

Abstract: smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664
Contextual Info: Transistors SMD Type Medium Power Transistor 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5

2SD1664L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION 1 The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES SOT-89 *Low VCE SAT : VCE (SAT)= 0.15V(Typ) (IC/IB= 500mA/50mA) *Complement the 2SB1132.

2SB1132R

Abstract: 2SB1132Q 2SB1132 2SB1132P KFG1G16U2C-AIB6 2SB1132-P MARKING BAQ SOT-89 bAr sot-89
Contextual Info: 2SB1132 PNP Plastic-Encapsulate Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25%C Rating Symbol Value Unit Collector-Emitter Voltage VCBO -40 Vdc Collector-Base Voltage VCEO -32 Vdc Emitter-Base Voltage VEBO -5.0

2SB1132

Abstract: bAr sot-89 marking BAR sot89 marking BAR sot-89
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 W (Tamb=25℃) 1 2 3. EMITTER Collector current -1 A ICM: Collector-base voltage

transistor smd marking BA

Abstract: smd transistor marking br MARKING SMD TRANSISTOR P smd transistor marking ba SMD BR 32 2SB1132 SMD SMD TRANSISTOR BR transistor smd br transistor smd marking BR br smd transistor
Contextual Info: Transistors SMD Type Medium Power Transistor 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO

2SB1132

Abstract: 2SB1132R 2SB1132-R 2SB1132Q 2SB1132-Q
Contextual Info: 2SB1132 -1A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 Low power dissipation 0.5W 4 MARKING 1 2 3 1132 A Date Code E C B CLASSIFICATION OF hFE

2SD1858

Abstract: 2SB1132 2SB1237 2SD1664
Contextual Info: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

Contextual Info: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER

marking 2sd1664

Contextual Info: Transistors Diodes SMD Type Product specification 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO

Contextual Info: SMD Type Product specification 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V -1 A Collector Current