2SB1132 TRANSISTOR Search Results

Contextual Info: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available In MPT3 (MPT, SC-62) package • package marking: 2SB1132; BA*-, where ★ is hFE code 2SB1132 (MPT3) • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB) • low collector saturation voltage,

Contextual Info: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SB1132; B A *, where ★ is hFE code 2SB1132 (MPT3) . , +0.2 *•5—0.1 1.6±0.1 • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB)

2sB1237 transistor

Abstract: 2SB1237 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100
Contextual Info: 2SB1132 / 2SA1515S / 2SB1237 Transistors Medium Power Transistor −32V,−1A 2SB1132 / 2SA1515S / 2SB1237 zExternal dimensions (Unit : mm) 2SB1132 4+ − 0.2 1.0 + − 0.2 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. „ FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) „ ORDERING INFORMATION

2SB1132G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. „ FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) „ ORDERING INFORMATION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION  The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.  FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA)  ORDERING INFORMATION

2SB1237

Abstract: 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100 2SB1132-QR
Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

2sb1132

Abstract: 2SB1132-Q
Contextual Info: MCC TM Micro Commercial Components Features 2SB1132 2SB1132-P 2SB1132-Q 2SB1132-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# x Case Material: Molded Plastic. Classification Rating 94V-0

2SB1132Q

Contextual Info: MCC TM Micro Commercial Components 2SB1132 2SB1132-P 2SB1132-Q 2SB1132-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

2SB1132

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR 1 DESCRIPTION SOT-89 The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES 1 * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) TO-252 *Pb-free plating product number: 2SB1132L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR  DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor.  FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA)  ORDERING INFORMATION

Contextual Info: MCC TM Micro Commercial Components 2SB1132-P 2SB1132-Q 2SB1132-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates • •

rohm 2sd1664

Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

Contextual Info: UTC 2SB1132 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES *Low VCE sat . VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA) 1 TO-252 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

Contextual Info: UTC 2SB1132 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *Low VCE sat .VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA) SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

2SB1132R

Contextual Info: MCC TM Micro Commercial Components 2SB1132-P 2SB1132-Q 2SB1132-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

transistor marking BAR

Abstract: 2SB1132 MARKING BAQ
Contextual Info: 2SB1132 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 W (Tamb=25℃) 1 2 3. EMITTER Collector current ICM: -1 A Collector-base voltage V V(BR)CBO: -40 Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: MCC TM Micro Commercial Components 2SB1132-P 2SB1132-Q 2SB1132-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1

Contextual Info: MCC TM Micro Commercial Components 2SB1132-P 2SB1132-Q 2SB1132-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates • •

Contextual Info: MCC TM Micro Commercial Components 2SB1132-P 2SB1132-Q 2SB1132-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates • •

d1664

Abstract: Transistor 1501 2sb1237
Contextual Info: Transistors Medium Power Transistor -32V, -1A 2SB1132/2SA1515S/2SB1237 •F e a tu re s 1) • E x te rn a l dim ensions (Units: mm) LOW VcE(satl. VcE(sat) = - 0 .2 V (Typ.) 2SA1515S 2SB1132 4 S+0.2 (Ic /le = -5 0 0 m A /- 5 0 m A ) 5 - 0.1 16 2) C om plim ents 2S D 1664/2S D 1858.

Contextual Info: h "7 > V 7. $ /Transistors 2SB1132 I PNP '> U = i > h 7 > y X ^ 4 |it:fr*iilflffl/M ed iu m Power Amp. Epitaxial Planar PNP Silicon Transistor • « ft 1 P c = 2 W ? - £ > 3 4 0 X 4 0 X 0 . 7m m -tz Dimensions (Unit : mm) 7 sù->J V' V 'v j i v • 2SB1132

2SB1132

Abstract: 2SB1237 2SA1515S 2SD1858 transistor pnp 1a 2sB1237 transistor "Power transistor" data sheet transistor PNP 2SD1664 2SB1132 transistor
Contextual Info: Transistors Medium Power Transistor *32V, *1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type

transistor Ic 1A datasheet NPN

Abstract: 2SD1858 2SD1664 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor
Contextual Info: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor