2SA934 TRANSISTOR Search Results

2SA934 transistor

Abstract: 2SA934 transistor 2SA934 E50M
Contextual Info: K "7 > V 3. $ / I ransistors 2SA934 2SA934 7 V - ^ PNP h Epitaxial Planar PNP Silicon Transistor ^ 7f->?"ffl/Medium Power Amp. & Switching • ÿf-Jfirj’ Ü IS I/D im e n s io n s U nit : mm 1) P c = 750m W t ^ i i ' o 2) VCE (sat)^',f i < , TL'So Vce (sat)=—0 .2V (Typ.)

2sa934

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE z Power Dissipation PCM: 0.75 z Low Saturation Voltage (VCE(sat)=0.15V at 500mA) z Complementary Pair with 2SA934

2SA934

Abstract: 2SA934 transistor 2sc2060
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE z Power dissipation PCM: 0.75 z Low saturation voltage (VCE(sat)=0.15V at 500mA) z Complementary pair with 2SA934

2sc2060

Abstract: TO 92L NPN Transistor 2SA934 transistor
Contextual Info: 2SC2060 TO-92L Transistor NPN TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 7.800 8.200 3. BASE 1 Features 2 3 0.600 0.800 — Power dissipation PCM: 0.75 — Low saturation voltage (VCE(sat)=0.15V at 500mA) — Complementary pair with 2SA934 W (Tamb=25℃) 0.350

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR z Power Dissipation PCM: 0.75 z Low Saturation Voltage (VCE(sat)=0.15V at 500mA) z Complementary Pair with 2SA934

2SC2060

Abstract: 2SA934 transistor
Contextual Info: 2SC2060 TO-92MOD Transistor NPN TO-92MOD 5.800 6.200 1. EMITTER 1 2 3 2. COLLECTOR 8.400 8.800 3. BASE 0.900 1.100 0.400 0.600 Features 13.800 14.200 — Power dissipation PCM: 0.75 — Low saturation voltage (VCE(sat)=0.15V at 500mA) — Complementary pair with 2SA934

2SA934

Abstract: 2SA934 transistor 2sc2060
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR z Power dissipation PCM: 0.75 W (Tamb=25℃) z Low saturation voltage (VCE(sat)=0.15V at 500mA) z Complementary pair with 2SA934

Contextual Info: ROHM CO LTD ♦ 7flSôcicici D0üS41h T BRHM 40E » h 7 > P X $ /Transistors 2SA934 PN P y U ^ > & ~M "J ?•>^ffl/Medium Power Amp. &Switching Epitaxial Planar PN P Silicon Transistor T -2.7 -/S ' • ^ J f^ jÉ 0 /Dimensions Unit: mm 1 )P c =750m W i:^:ê(,'o

transistor a934

Abstract: A934 A934 transistor a-934 2SA934 SC206 DSA2IH00162197. 2SA934 transistor
Contextual Info: K ~p > V 7 , £ /T ra n s is to rs 2 S A 9 3 4 ^ 2SA934 y |^ > h 7 > y ^ /M edium Power Amp. & Switching Epitaxial Planar PNP Silicon Transistor 4 ' ^ i s 1l i & X f 7 • • ^ ffi^ Ü H ä / D im e n s io n s Unit : mm) 1) Pc = 7 5 0 m W fc 2) VCE (sati =

2sa934

Abstract: 2sc2060
Contextual Info: MOE D ROHM CO LT» • TñSñ'm OQOShTS 1 ■ R H M 2SC2060 / T ransistors ; 2SC 20S0 — » ■ 7 T 2 7 - ; r Xb?$*ri/7JUyis-?M NPN 4 J ^3;tH,Illffi/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistor • i+Jfi \H£E3/Dim ensions U n it: mm

2SC2060

Abstract: 2SA934 2SC2060 Q transistor 2SC2060
Contextual Info: 2SC2060 h 7 > v ^ £ /Transistors « w w w Epitaxial Planar NPN Silicon Transistor /Medium Power Amp. • • ft* 1 jiE l/D im e n s io n s Unit : mm) P c A ''* il'o S .8 ± 0 .2 4.8 ±0.2 PC =750m W 2) VcE(sat)*'' < LTl' 5 0 V c E (s a t)= 0 .1 5 V (Typ.)

equivalent transistor 8550

Abstract: 2sa1015 equivalent 8550 pnp transistor Bc 8550 9015 transistor transistor BC 557 TRANSISTOR BC 327 PNP 8550 9015 pnp transistor 9015
Contextual Info: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA853 HN / BC 559 / 9015 2SA978 HN / BC 560 / 9015 2SA1318 HN / BC 556 / 9015 2SA854 HN / BC 327 / 8550

2SC2060

Abstract: 2SA934 2SC2060 Q A934
Contextual Info: 2SC2060 h "7 > V Z. $ /Transistors 2SC2060 x t 0$ * y r J l ' 7 ° l s - j - & N P N '> • ; = ] > /M edium Power Amp. Epitaxial Planar NPN Silicon Transistor • «a • \H ± E I/D im e n s io n s U n it : mm 1) P c = 7 5 0 m W t * ^ l ' o 2) V Ce ( sat |= 0 .1 5 V (at 500mA) ¿ f g ; < j g

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2SC4722

Abstract: 2SD2451 2sc4719 2SB1482 2SA1820
Contextual Info: T ransistors TO-92L • TO-92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO -92L MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (T a = 2 5 ‘ C) Package Application

2SB1328

Abstract: 2SD2008 2SB1329 2SD2010 2SB1041 2sd2172 2SD1929 2SB1425 2SA1861 2SB1306
Contextual Info: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application TO-92L I T0-92LS | MRT Part Nò.

2SB1333

Abstract: 2SD2006 2SD2005 2SD2010 2SD2008 2SA1861 2SD2011 2SB1306 2sd2159 2SB1482
Contextual Info: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application T0-92L I T0-92LS | MRT Part Nò.

2SB1482

Abstract: 2SC4722 2sa1820 2SD2172
Contextual Info: Transistors TO-92L • TO-92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. P a ckage A pplication TO-92L TO-92LS MRT Part No.

TT 2076 transistor

Abstract: 2sc2052 TT 2076 tbb 2066 2SA934 2SA93 IN tt 2076 transistor s 2065 af Mix 2071
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SD2008

Abstract: 2SD2006 transistor 2SD2006 2Sb1333 2SD2010 2SB1482 2SB1515 2SB1306 transistor 2SD2004 2SB1331
Contextual Info: Transistors TO-92L • T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (T a = 2 5 °C ) P a ckage Application

2SC2675

Abstract: 2SD786 2SC3359 2SA1137 2SC2808 2SB737 J0801 2SA1515 2SA934 2SB1041
Contextual Info: RO H M CORP cnT deT J ? f l a f l cn ci D O D iis a s f D m ^iliaS ífitii iiiii iSnrtrtfinrhfc r " 1 • TO-92, SPT Types ' Function * New Products A. Maintenance part. Low Noise Amp Chroma Darlington Driver • - Cob pF 4.0 — 6.5 6.5 4.0 4.0 4.0 4.0

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

2SD1966

Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
Contextual Info: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5

C143EF

Abstract: DTA143TV 124ES 124EK c124ef 2SC2675 c144ef dtc 144es 144EK 124EF
Contextual Info: T107 O o o o co K I e sf +y o C G G o Q © o o o o_ z 5 _i o o_ z O CL 5 a QC £L Z _i O Z 5 co 00 O o co co o o CO 3 •\ °u 1 <o o o o o © iK K co o G ■G 0 o © o G O G W d t « & n 4SI K « o û_ co UJ CO z a: cc u. OC c o 5 £ O ü. O cr O _l ag