2SA812R Search Results

2SA812R Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SA812(RANGE:300-400)		JCET Group	PNP transistor in SOT-23 package with -50V collector-emitter voltage, -100mA continuous collector current, 200mW power dissipation, and DC current gain ranging from 90 to 600.	Original	PDF

2SA812R Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2Sc945 equivalent Abstract: 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent Contextual Info: 10. Specifications of MINI M O L D Device Typ« Number Regular /Reversal 2SA811 2SA812/2SA812R PNP Tran sistor NPN Tranlilto r Nearest Equivalent* ' M M BA811.M M BA812 \| BCW29.SCW 30,BCW 69,8CW 70,MMBTA70 TO-92 Packaged Equivalent Page 2SA641 21 2SA733.BC556.BC5571BC558,BC559,BC560	OCR Scan	2SA811 2SA812/2SA812R 2SB624/2SB624R 2S8736/2S8736R 907A/NTM 2907AR TM3906/NTM3906R BA811 BA812 2SA641 2Sc945 equivalent 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent	PDF
2SA81 Abstract: 2sA812R Contextual Info: 2SA812,2SA812R Audio Frequency, General Purpose Amplifier P N P Silicon Epitaxial Transistor P A C K A G E D IM E N S IO N S • Com plem entary to 2 S C 1 6 2 3 . in millimeters inches • H igh D C Current Gain: h F £ = 2 0 0 T Y P . ( V C E = - 6 . 0 V , lc = - 1 . 0 m A i	OCR Scan	2SA812 2SA812R 2SC1623 2SA81 2sA812R	PDF
2SA812QLT1 Abstract: ESILICON Contextual Info: WILLAS FM120-M+ 2SA812xLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.	Original	OD-123+ FM120-M+ 2SA812xLT1 OD-123H FM1200-M+ 2SC1623 FM120-MH FM130-MH FM140-M FM150-MH 2SA812QLT1 ESILICON	PDF

Catalog Datasheet

Type

Document Tags

PDF

2Sc945 equivalent

Abstract: 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent
Contextual Info: 10. Specifications of MINI M O L D Device Typ« Number Regular /Reversal 2SA811 2SA812/2SA812R PNP Tran sistor NPN Tranlilto r Nearest Equivalent* ' M M BA811.M M BA812 | BCW29.SCW 30,BCW 69,8CW 70,MMBTA70 TO-92 Packaged Equivalent Page 2SA641 21 2SA733.BC556.BC5571BC558,BC559,BC560

OCR Scan

2SA811 2SA812/2SA812R 2SB624/2SB624R 2S8736/2S8736R 907A/NTM 2907AR TM3906/NTM3906R BA811 BA812 2SA641 2Sc945 equivalent 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent

PDF

2SA81

Abstract: 2sA812R
Contextual Info: 2SA812,2SA812R Audio Frequency, General Purpose Amplifier P N P Silicon Epitaxial Transistor P A C K A G E D IM E N S IO N S • Com plem entary to 2 S C 1 6 2 3 . in millimeters inches • H igh D C Current Gain: h F £ = 2 0 0 T Y P . ( V C E = - 6 . 0 V , lc = - 1 . 0 m A i

OCR Scan

2SA812 2SA812R 2SC1623 2SA81 2sA812R

PDF

2SA812QLT1

Abstract: ESILICON
Contextual Info: WILLAS FM120-M+ 2SA812xLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Original

OD-123+ FM120-M+ 2SA812xLT1 OD-123H FM1200-M+ 2SC1623 FM120-MH FM130-MH FM140-M FM150-MH 2SA812QLT1 ESILICON

PDF