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    2SA614 Y Search Results

    2SA614 Y Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SA614Y
    		Continental Device India Semiconductor Device Data Book 1996 Scan PDF 90.74KB 1
    2SA614Y
    		Continental Device India TO-220 PNP Power Package Transistors Scan PDF 56.54KB 1
    SF Impression Pixel

    2SA614 Y Price and Stock

    Samsung Electro-Mechanics

    Samsung Electro-Mechanics 2SA614Y

    3 A, 55 V, PNP, Si, POWER TRANSISTOR, TO-220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA614Y 19
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    2SA614 Y Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA614

    Abstract: 2sa614 transistor 2sa614 y
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA614 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -55V (Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= -0.5V (Max.)@ IC= -1A ·Collector Power Dissipation: PC= 25W@ TC= 25℃


    Original     		2SA614 -10mA; -500A; 2SA614 2sa614 transistor 2sa614 y PDF

    2SA614

    Abstract: 2SA614Y 2N6107 2N6109 2N6111 2SA614R 2SA748 2SA748P 2SA748Q 2SA748R
    Contextual Info: TO-220 Power Package Transistors PNP Maximum Ratings Type No. V C BO ^CEO Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) PD (W) (V) Min @Tc=25°c ^EBO 'cBO ^FE @ Min Max 75 30 2.3 150 * 100 60 * 100 40 'ces (V) Min 2N6107 80 70 5 40 7


    OCR Scan     		O-220 2N6107 2N6109 2N6111 2SA614 2SA6140 2SA614R 2SB856A 2SB856B 2SB856C 2SA614Y 2SA748 2SA748P 2SA748Q 2SA748R PDF

    B857

    Abstract: a968 TRANSISTORS B857 B-857 A940 b857 to-220 2sb85 A-968
    Contextual Info: TO-220 Power Package Transistors PNP Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. Pd (W) @Tc=25°c ^CBO V CEO V EBO (V) Min (V) Min (V) Min 2N6107 80 70 5 40 2N6109 60 50 5 40 'c (A) 'cBO ^CB ^CES V CE (HA) Max


    OCR Scan     		O-220 2N6107 2SB856C 2SB857C 2SB858 B857 a968 TRANSISTORS B857 B-857 A940 b857 to-220 2sb85 A-968 PDF

    STC5610

    Abstract: B0536 2n3408 2SA614 2SA616 BD272 BD436A STP60S STC5204 D634
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. MT10a STC5520/I STC5521/I STC5522/I STC5523/I STC5524/I 2P389 2P424 STC5610 B0536 2n3408 2SA614 2SA616 BD272 BD436A STP60S STC5204 D634 PDF

    D634 transistor

    Abstract: 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 D634 transistor 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536 PDF

    2SA614

    Abstract: 2SA616 2sc113 STC5204
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF

    2sa648 transistor

    Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2sa648 transistor usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 PDF