2SA208 Search Results

2SA2089S

Abstract: 2SC5877S SC-72
Contextual Info: 2SA2089S Transistors Medium power transistor −60V, −0.5A 2SA2089S !External dimensions (Unit : mm) SPT (SC-72) 2.0 3Min. 3.0 4.0 (15Min.) !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100mA, IB = −10mA)

2SA20

Abstract: 2SA2086S 2SC5874S
Contextual Info: 2SA2086S Transistors Medium power transistor −30V, −1A 2SA2086S !External dimensions (Unit : mm) 4.0 2.0 3Min. 3.0 SPT (15Min.) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −1A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −1.0A, IB = −100mA)

2SA2081

Abstract: 2SA2081CCTL-E 2SA2081CDTL-E PTSP0003ZA-A
Contextual Info: 2SA2081 Silicon PNP Epitaxial REJ03G0644-0100 Previous ADE-208-1477 Rev.1.00 Aug.10.2005 Features Low frequency amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 *CMPAK is a trademark of Renesas Technology Corp.

2SA1806J

Abstract: 2SA2082 2SA2162
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2082 Silicon PNP epitaxial planar type For high speed switching Unit: mm • Features 3 0.60±0.05 2 1 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro

2SA2083

Abstract: 2SA20 Hitachi DSA00517
Contextual Info: 2SA2083 Silicon PNP Epitaxial ADE-208-1478 Z Rev.0 Feb. 2002 Features • Low frequency amplifier Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA2083 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –55

2V1000

Contextual Info: Medium power transistor 60V, 0.5A 2SA2088 Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load.

2SA20

Abstract: 2SA2088 2SC5876 T106
Contextual Info: 2SA2088 Transistors Medium power transistor −60V, −0.5A 2SA2088 zExternal dimensions (Unit : mm) UMT3 2.0 0.9 0.2 0.3 0.7 (1) 0.65 0.65 1.3 0.15 0.1Min. (2) 2.1 (3) 1.25 zFeatures 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA) 2) Low saturation voltage, typically

2SA2084

Abstract: 2SA20
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2084 Silicon PNP epitaxial planar type Unit: mm For general amplification 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 1.9±0.1 Unit Collector-base voltage (Emitter open) VCBO

2SA2084

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2084 Silicon PNP epitaxial planar type Unit: mm For general amplification 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 1.9±0.1 Unit Collector-base voltage (Emitter open) VCBO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2082 Silicon PNP epitaxial planar type For high speed switching Unit: mm • Features 3 2 0.60±0.05 1 0.25±0.05 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO –10

Contextual Info: AEC-Q101 Qualified Medium power transistor 60V, 0.5A 2SA2088FRA Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

A2087

Abstract: 2SA2087 2SC5875 Package A2087
Contextual Info: 2SA2087 Transistors Power transistor −30V, −2A 2SA2087 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −100mA)

2SA20

Abstract: 2SA2084
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2084 Silicon PNP epitaxial planar type Unit: mm For general amplification 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 1.9±0.1 Unit Collector-base voltage (Emitter open) VCBO

Contextual Info: 2SA2081 Silicon PNP Epitaxial REJ03G0644-0100 Previous ADE-208-1477 Rev.1.00 Aug.10.2005 Features Low frequency amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 *CMPAK is a trademark of Renesas Technology Corp.

2SA2088

Abstract: 2SC5876 T106
Contextual Info: 2SA2088 Transistors Medium power transistor −60V, −0.5A 2SA2088 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 UMT3 (SC-70) <SOT-323> 0.7 !External dimensions (Unit : mm) 1.25 0.2 2.1 0.15 !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA)

2SA20

Abstract: 2SA2089S 2SC5877S SC-72 A2089
Contextual Info: 2SA2089S Transistors Medium power transistor −60V, −0.5A 2SA2089S !External dimensions (Unit : mm) SPT (SC-72) 2.0 3Min. 3.0 4.0 (15Min.) !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100mA, IB = −10mA)

Package A2087

Abstract: 2SA2087 2SC5875 A2087 2SA20
Contextual Info: 2SA2087 Transistors Power transistor −30V, −2A 2SA2087 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −100mA)

2SA2082

Abstract: 2SA21 2SA1806J 2SA2162
Contextual Info: Transistors 2SA2082 Silicon PNP epitaxial planar type For high speed switching Unit: mm • Features 3 2 0.60±0.05 1 0.25±0.05 Symbol Rating Unit Collector-base voltage Emitter open VCBO –10 V Collector-emitter voltage (Base open) VCEO –10 V Emitter-base voltage (Collector open)

Hitachi DSA00280

Abstract: 2SA2080
Contextual Info: 2SA2080 Silicon PNP Epitaxial ADE-208-1476 Z Rev. 0 Feb. 2002 Features • Low frequency amplifier Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA2080 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –30

2SA2086S

Abstract: 2SC5874S 2SC587
Contextual Info: 2SA2086S Transistors Medium power transistor −30V, −1A 2SA2086S !External dimensions (Unit : mm) 4.0 2.0 3Min. 3.0 SPT (15Min.) !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −1A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −1.0A, IB = −100mA)

2SA2084

Contextual Info: Transistors 2SA2084 Silicon PNP epitaxial planar type Unit: mm For general amplification 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 1.9±0.1 Unit Collector-base voltage Emitter open VCBO −300 V Collector-emitter voltage (Base open) VCEO −300 V

NE 555 datasheet

Abstract: 2SA2088 Q2SA2088 pdf 555
Contextual Info: SPICE PARAMETER 2SA2088 by ROHM TR Div. * 2SA2088 PNP BJT model * Date: 2006/12/15 .MODEL 2SA2088 PNP + IS=65.000E-15 + BF=249.50 + VAF=100 + IKF=.69106 + ISE=65.001E-15 + NE=1.4594 + BR=10.162 + VAR=100 + IKR=11.394 + ISC=5.0270E-12 + NC=1.3515 + NK=.79748

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2082 Silicon PNP epitaxial planar type For high speed switching Unit: mm • Features 3 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO –10 V Collector-emitter voltage (Base open)

2SA2088

Abstract: 2SC5876 T106
Contextual Info: 2SA2088 Transistors Medium power transistor −60V, −0.5A 2SA2088 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 UMT3 (SC-70) <SOT-323> 0.7 !External dimensions (Unit : mm) 1.25 0.2 2.1 0.15 !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA)