2SA183 Search Results

Contextual Info: 2SC4793 SILICON NPN EPITAXIAL TYPE POW ER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • • High Transition Frequency : fr=100M H z Typ. Complementary to 2SA1837 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

transistor c 4793

Abstract: transistor 4793 TOSHIBA C 4793 hfe 4793 2sc 4793
Contextual Info: TOSHIBA 2SC4793 Transistor Silicon NPN Epitaxial Planar Type Power Amplifier, Driver Stage Applications Features • High Transistion: fT = 100MHz • Com plem entary to 2SA1837 A bsolute M axim um Ratings Ta = 25°C SYMBOL RATING UNIT C ollector-B ase Voltage

C5001 transistor

Abstract: transistor C5001 2SC5001 transistor marking C5001
Contextual Info: 2SC5001 Datasheet NPN 10A 20V Middle Power Transistor lOutline Parameter Value VCEO IC 20V 10A Collector CPT3 Base Emitter 2SC5001 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1834 3) Low VCE(sat) VCE(sat)= 0.25V(Max.)

2SA1832F

Abstract: 2SC4738F
Contextual Info: 2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832F Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)

2SC4738

Abstract: 2SA1832
Contextual Info: 2SA1832 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1832 ○ 低周波増幅用 • 単位: mm : VCEO = −50 V 高耐圧です。 • コレクタ電流が大きい。: IC = −150 mA (最大) • 電流増幅率が高い。

transistor C4793

Abstract: c4793 C4793 TOSHIBA c4793 datasheet transistor 2SC4793 c4793 transistor 2sc4793 2SA1837 2Sc4793 toshiba
Contextual Info: 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1837 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics

2SA1837

Abstract: transistor 2SC4793 2sc4793
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1837 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SC4793 APPLICATIONS ·Power amplifier applications.

Contextual Info: T O SH IB A 2SC4793 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC4793 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 1 Q ± 0 -3 • • High Transition Frequency : fp = 100MHz Typ. Complementary to 2SA1837 > .2 ± 0 .2 Oi

2SA1264N

Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
Contextual Info: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207

transistor A1837

Abstract: a1837 2SA1837 a1837 datasheet 2SC4793 toshiba A1837 A1837 transistor
Contextual Info: 2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz typ. • Complementary to 2SC4793 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics

2SA1837

Abstract: 2SC4793 2SA1837 Toshiba
Contextual Info: TOSHIBA Discrete Semiconductors 2SC4793 Transistor Unit in mm Silicon NPN Epitaxial Planar Type Power Amplifier, Driver Stage Applications Features • High Transistion: fT = 100MHz • Complementary to 2SA1837 Absolute Maximum Ratings Ta = 25°C CHARACTERISTIC

Plastic-Encapsulate Transistors

Abstract: marking SG transistors 2SA1832
Contextual Info: SOT-523 Plastic-Encapsulate Transistors SOT-523 2SA1832 TRANSISTOR（PNP） 1. BASE 2. EMITTER FEATURES Power dissipation PCM : 0.1 W（Tamb=25℃） Collector current ICM : -0.15 A Collector-base voltage V BR CBO : -50 V Operating and storage junction temperature range

transistor on 4409

Abstract: on 4409 5SA18 2SC473 2SC4734 transistor t5c 2SA1830 5sa1
Contextual Info: Ordering num ber:EN4409 2SA1830/2SC4734 2SA1830 : PNP Epitaxial Planar Silicon Transistor No.4409 2SC4734 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • Large current capacity Ic = 2A . • High breakdown voltage (Vceo = 400V).

2SA1837

Abstract: 2SC4793
Contextual Info: TOSHIBA 2SC4793 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4793 Unit in mm POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS r • • High Transition Frequency : fp = 100MHz Typ. Complementary to 2SA1837 2 '^ "<v>0 o cn CO O 1.1 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SA1837 TO – 220F TRANSISTOR PNP 1. BASE FEATURES z High Breakdown Voltage z High Transition Frequency 2. COLLECTOR 3. EMITTER APPLICATIONS z Power Amplifier Applications

2sa183

Abstract: 2SA1839
Contextual Info: Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1839 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 sets to be made small and slim 0.55 Very small-sized package permitting 2SA1839-applied +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1

2SA1836

Abstract: audio Silicon PNP Power nte
Contextual Info: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SA1836 PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SA1836 is PNP silicon epitaxial transistor. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage

2SA1837

Abstract: transistor 2sa1837 pnp VCEO 230V Ic 1A la 1837 2SC4793
Contextual Info: 2SA1837 TO SH IBA 2 S A 1 837 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS High Transition Frequency : fr[' = 70MHz Typ. Complementary to 2SC4793 1.1 MAXIMUM RATINGS (Tc = 25°C)

ITR04866

Abstract: ITR04867 ITR04868 2SA1839 ITR04865 A 14U
Contextual Info: Ordering number:ENN4666 PNP Epitaxial Planar Silicon Transistor 2SA1839 Muting Circuit Applications Package Dimensions • Ultrasmall-sized package permitting 2SA1839applied sets to be made small and slim. · Small output capacitance. · Low collector-to-emitter saturation voltage.

2SA1837

Abstract: 2SA1837 Toshiba la 1837 2SC4793
Contextual Info: 2SA1837 TO SH IBA 2 S A 1 837 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 10 ±0.3 r • • MAXIMUM RATINGS Ta = 25°C ELECTRICAL CHARACTERISTICS (Ta = 25°C) 2.7±Q 2 CO High Transition Frequency : fr[' = 70MHz (Typ.)

2SA1832FT

Abstract: 2SC4738FT
Contextual Info: 2SA1832FT シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1832FT ○ 低周波増幅用 • 単位: mm 高耐圧です。 : VCEO = −50 V • コレクタ電流が大きい。 : IC = −150 mA (最大) • 電流増幅率が高い。

Contextual Info: 2SA1834 Transistors Low VCE sat Transistor (Strobe flash) (−20V, −10A) 2SA1834 External dimentions (Unit : mm) Features 1) Low saturation voltage, typically VCE(sat) = −0.16V at IC / IB= −4A / −50mA. 2) High current capacity, typically IC= –10A for DC

D217

Abstract: 2SC5001 96-193-D217 2SA1834
Contextual Info: Transistors 2SA1834 2SC5001 96-106-B217 (96-193-D217) 292

2SC4738

Abstract: 2SA1832
Contextual Info: 2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1832 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) · Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)