2SA173 Search Results

Contextual Info: 2SA1735 SILICON PNP EPITAXIAL T Y P E Unit in mm 4.6MAX . ] 7MAX. » POWER AMPLIFIER APPLICATIONS » POWER SWITCHING APPLICAGIONS Low Saturation Voltage : VcE sat =-0.5V(Max.) (Ic=-500mA) High Speed Switching Time: tstg=0. 2 5 |J S (Typ.) Small Flat Package

smd ic marking PC

Abstract: SMD MARKING 2SA1734
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1734 Features Low saturation voltage: VCE sat = -0.5 V (max) (IC = -700 mA). High speed switching time: tstg = 0.2ìs (typ.). Small flat package. PC = 1.0 to 2.0 W (mounted on ceramic substrate). Absolute Maximum Ratings Ta = 25

Contextual Info: Product specification 2SA1730 Features Adoption of FBET , MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

2SA1736

Abstract: 2SC4541
Contextual Info: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 s (typ.)

Contextual Info: SMD Type Product specification 2SA1735 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -500mA) High Speed Switching Time: tstg = 0.25ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4540 Absolute Maximum Ratings Ta = 25

2SA1738

Abstract: 2SC3757 XP4654
Contextual Info: Composite Transistors XP4654 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For high speed switching 1 6 2 5 3 4 0 to 0.1 2SC3757+2SA1738 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element

2SA1735

Abstract: 2SC4540
Contextual Info: 2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 µs (typ.)

2SA1738

Abstract: 2SC3757
Contextual Info: Transistor 2SA1738 Silicon PNP epitaxial planer type For high speed switching Unit: mm 0.40+0.10 ñ0.05 • Features ■ Absolute Maximum Ratings 0.4±0.2 5° 2.8+0.2 -0.3 1.50+0.25 -0.05 10° Symbol Ratings Unit Collector to base voltage VCBO –15 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1738 Silicon PNP epitaxial planar type For high speed switching Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • High speed switching (Pair with 2SC3757)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1739G Silicon PNP epitaxial planar type For high speed switching Complementary to 2SC3938G • Features ■ Package • High speed switching • Low collector-emitter saturation voltage VCE(sat)

2SA1734

Abstract: 2SC4539
Contextual Info: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 µs (typ.)

2SA1736

Abstract: 2SC4541 marking HE M2X marking
Contextual Info: TO SH IBA 2SA1736 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 736 POWER AMPLIFIER APPLICATIONS U n it in mm POWER SWITCHING APPLICATIONS 1.6MAX. —j- * 4.6MAX. 1.7MAX. 0.4 + 0.05 i Low Saturation V o lta g e: V q ^ (sat) = —0.5V (Max.) (l£ = —1.5A)

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SA1736 Features • • • • • • Low saturation voltage: VCE sat =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.) Small flat package

2SA1730

Abstract: EN3134
Contextual Info: Ordering number:EN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.

2SA1734

Abstract: 2SC4539
Contextual Info: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 µs (typ.)

2SA1735

Abstract: 2SC4540
Contextual Info: 2SA1735 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1735 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −500 mA)

Contextual Info: 2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 µs (typ.)

Contextual Info: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 µs (typ.)

2044B

Abstract: 2SA1732 ITR04435 ITR04436 ITR04437 ta1210 N-313
Contextual Info: 注文コード No. N 3 1 3 6 2SA1732 N3136 20400 2SA1732 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 高速度スイッチング用 ・FBET, MBIT プロセス採用。 ・電流容量が大きい。 ・コレクタ・エミッタ飽和電圧が低い。

marking SA

Contextual Info: 2SA1734T2G Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com

2SA1739

Abstract: 2SC3938
Contextual Info: Transistors 2SA1739 Silicon PNP epitaxial planar type For high speed switching Complementary to 2SC3938 0.425 Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High speed switching • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1736 Features • • • • • • Low saturation voltage: VCE sat =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.) Small flat package

022sa

Abstract: 1733K A1733K 2SA1733
Contextual Info: 2SA1733K/2SA1808 h ~7> v 7, $ / T ransistors 2SA 1733K 2SA 1808 — PNP y lj 3 > t ' 7 > y Z $ Epitaxial Planar PNP Silicon Transistor Amplifier h 7 1 2S A 1733K 1.9+ 0.2 0.8±0. i o . 95 O .s s j • Features < )in > ÿ 2S A 1808 2.9±0.2 2) I 1 ) Emitter

2044B

Abstract: 2SA1731 ITR04425
Contextual Info: Ordering number:ENN3135A PNP Epitaxial Planar Silicon Transistor 2SA1731 High-Speed Switching Applications Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.