2SA146 Search Results

SMD 1L

Abstract: 500ma 40v pnp 2SA1463 hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxia 2SA1463 Features High speed,high voltage switching. Low Collector Saturation Voltage Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -60 V Collecto to emitter voltage

Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1464 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High fT: fT=400MHz. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

2SB1547

Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Contextual Info: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020

Contextual Info: MCC TM Micro Commercial Components 2SA1464-P 2SA1464-Q 2SA1464-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon Epitaxial Transistors High fT: fT=400MHZ

2SA1468

Abstract: Hitachi DSA0076
Contextual Info: 2SA1468 Silicon PNP Epitaxial ADE-208-1018 Z 1st. Edition Mar. 2001 Application High voltage amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1468 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

SC3746

Contextual Info: Ordering num ber: E N 1973 A 2SA1469/2SC3746 N0.1973A PNP/NPN E pitaxial P lan ar Silicon Transistors 60V/5A High-Speed Switching Applications Applications • Various inductance lamp drivers for electrical equipment. • Inverters, converters strobo, flash, fluorescent lamp lighting circuit .

Contextual Info: MCC TM Micro Commercial Components 2SA1464-P 2SA1464-Q 2SA1464-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PNP Silicon Epitaxial Transistors High fT: fT=400MHZ

Marking B12

Abstract: B12 diode 2SA1464 2SC3739 B14 sot23
Contextual Info: 2SC3739 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • NPN Silicon Epitaxial Transistors High Gain Bandwidth Product: fT=200 MHz Min. Complementary to 2SA1464 Maximum Ratings Symbol V CEO V CBO V EBO

2SA1462

Abstract: Y33-Y34 2SC3735
Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SA1462 HIGH SPEED SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M INI MOLD FE A T U R ES PACKAGE DIMENSIONS in m illim eters 2. 8 ± 0.2 • High Speed Switching • High fT : fT = 1 800 M Hz T Y P . ton = 9.0 ns T Y P .

2SA1460

Abstract: 2SC3733 transistor 2SC3733
Contextual Info: NEC PNP SILICON TRANSISTOR 2SA1460 DESCRIPTION The 2SA1460 is designed fo r power amplifier and high speed switching applications. PACKAGE DIMENSIONS in m illim eters inches FEATURES • High speed, high voltage switching. • Low Collector Saturation Voltage.

2SC3739

Abstract: marking Y12
Contextual Info: MCC 2SA1464
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • PNP Silicon Epitaxial Transistors High fT: fT=400 MHz Complementary to 2SC3739 Maximum Ratings Symbol V CEO V CBO

Contextual Info: 2SA1464 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • PNP Silicon Epitaxial Transistors High fT: fT=400 MHz Complementary to 2SC3739 Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage

2SA1469

Abstract: 2SC3746
Contextual Info: 2SA1469 / 2SC3746 Ordering number : EN1973C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1469 / 2SC3746 60V / 5A High-Speed Switching Applications Applications • • • • Various inductance lamp drivers for electrical equipment.

Contextual Info: f NEC ELECTRON DEVICE SILICON TRANSISTOR / 2SA1461 HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FE A TU R ES PACKAGE D IM E N S IO N S in m illim eters • H ig h Speed S w itc h in g : 2 8 '0 .2 • H ig h G a in B a n d w id th P ro d u c t : f j = 5 1 0 M H z

2SA1464

Abstract: marking Y12 marking y13
Contextual Info: 2SA1464 2SA1464 TRANSISTOR PNP FEATURES SOT-23-3L 1. EMITTER 2. BASE 3. COLLECTOR Power dissipation 0.2 W (Tamb=25℃) 1. 02 Collector current ICM : -0.5 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 0. 95¡ À0. 025

D1793

Abstract: 2SA1463
Contextual Info: データ・シート シリコン・トランジスタ Silicon Transistor 2SA1463 PNP エピタキシアル形シリコン・トランジスタ 高速度スイッチングおよび高周波増幅用 本資料の内容は，予告なく変更することがありますので，最新のものであることをご確認の上ご使用ください。

2sc3746

Abstract: 2sa146 2SA1469
Contextual Info: Inchange Semiconductor Product Specification 2SC3746 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1469 ・Low saturation voltage ・Excellent current dependence of hFE ・Short switching time APPLICATIONS ・Various inductance of lamp drivers for

75150 PC

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3739 Features • • NPN Silicon Epitaxial Transistors High Gain Bandwidth Product: fT=200 MHz Min. Complementary to 2SA1464 Maximum Ratings

SA1469

Abstract: SC3746 2sc3746 2SA1469
Contextual Info: [^Ordering num ber: E N 1 9 7 3 Ä I 2SA1469/2SC3746 PNP/NPN Epitaxial Planar Silicon Transistors 60V/5A High-Speed Switching Applications A pplications • Various inductance lamp drivers for electrical equipment. • Inverters, converters strobo, flash, fluorescent lamp lighting circuit .

2sc3746

Abstract: 2SC374 2SA1469
Contextual Info: SavantIC Semiconductor Product Specification 2SC3746 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SA1469 ·Low saturation voltage ·Excellent current dependence of hFE ·Short switching time APPLICATIONS ·Various inductance of lamp drivers for

marking y13

Abstract: 2SA1464 marking Y12
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1464 SOT-23-3L TRANSISTOR PNP 1. EMITTER 2. BASE 3. COLLECTOR FEATURES W (Tamb=25℃) 2. 80¡ À0. 05 0. 35 1. 9 Collector current A ICM : -0.5 Collector-base voltage

Contextual Info: 2SA1468 Silicon PNP Epitaxial HITACHI Application High voltage amplifier Outline MPAK | 1. Emitter 2. Base 3. Collector 168 2SA1468 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage V cB O -180 V Collector to emitter voltage

2SB616 NEC

Abstract: B0952 SOT3323 6u60 2N3185 B0952F
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 20 25 30 35 40 50 60 70 80 200 200 140 140 200 200 400 400 200 200 2SA1469S 2SA1259 B0223 SML3705 SML3728 SML3777 SML3323 SML3327 2N3177 2N3181 2N3185 2N3189 2N3193 2N3197 SOT3723 SOT3723 SOT3723 SOT3731

2SA1463

Abstract: 2SC3736 MEI-1202 MF-1134
Contextual Info: DATA SHEET • NEC SILICON TRANSISTOR 2SA1463 HIGH SPEED SW ITCHING PIMP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION PACKAGE DIM ENSIONS The 2SA1463 is designed for power amplifier and high speed switching applications. in millimeters FEATURES